APM9968CO Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V RDS(ON)=20mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • • Reliable and Rugged TSSOP-8 Packages Top View of TSSOP − 8 Lead Free Available (RoHS Compliant) (1) D (8) D Applications • Power Management in Notebook Computer, (4) G1 Portable Equipment and Battery Powered Systems • (5) G2 Zener Diode Protected Gate Provide Human Body Mode Electrostatic Discharge Protection to 2500 V S1 (2) S1 (3) S2 S2 (6) (7) N-Channel MOSFET Ordering and Marking Information Package Code O : TSSO P-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : O riginal Device APM 9968C Lead Free Code Handling Code Tem p. Range Package Code APM 9968C O : APM 9968C XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM9968CO Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±8 Continuous Drain Current IDM* 300µs Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature Storage Temperature Range PD* Maximum Power Dissipation RθJA* V 6 ID* TSTG Unit VGS=4.5V A 20 A 1 150 °C -55 to 150 TA=25°C 1.25 TA=100°C 0.5 Thermal Resistance-Junction to Ambient W °C/W 100 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD a a (TA = 25°C unless otherwise noted) Test Condition VGS=0V, IDS=250µA Max. 20 VGS=±8V, VDS=0V 30 0.5 Unit V TJ=85°C Gate Leakage Current Gate Charge Characteristics Qg Total Gate Charge Typ. 1 VDS=VGS, IDS=250µA Diode Forward Voltage Min. VDS=16V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance APM9968CO 0.7 µA 1 V ±10 µA VGS=4.5V, IDS=6A 16 20 VGS=2.5V, IDS=5.2A 20 25 ISD=0.5A, VGS=0V 0.7 1.3 19 25 mΩ V b Qgs Gate-Source Charge Qgd Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 VDS=10V, VGS=4.5V, IDS=6A 2 nC 5 2 www.anpec.com.tw APM9968CO Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM9968CO Min. Typ. Max. Unit b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω Turn-off Fall Time Ω 2.5 1250 pF 340 260 37 68 33 62 100 182 54 100 ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM9968CO Typical Characteristics Drain Current Power Dissipation 8 1.5 1.2 ID - Drain Current (A) Ptot - Power (W) 6 0.9 0.6 4 2 0.3 o o 0.0 TA=25 C 0 20 40 60 0 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance it im 300µs s( on )L 10 Rd ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 100 1ms 10ms 1 100ms 0.1 1s DC o TA=25 C 0.01 0.01 TA=25 C,VG=4.5V 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 Mounted on 1in pad o RθJA : 100 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM9968CO Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 20 26 VGS= 1.8, 2, 3, 4, 5, 6, 7, 8, 9, 10V RDS(ON) - On - Resistance (mΩ) 24 ID - Drain Current (A) 16 12 1.5V 8 4 22 VGS=2.5V 20 18 VGS=4.5V 16 14 1V 0 0 1 2 3 4 5 6 7 12 8 0 2 4 6 8 10 12 14 16 18 20 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 20 1.6 Normalized Threshold Voltage IDS =250µA ID - Drain Current (A) 16 12 o Tj=125 C 8 o Tj=-55 C o Tj=25 C 4 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 2.4 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1.4 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM9968CO Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.0 20 VGS= 4.5V 10 1.6 o IS - Source Current (A) Normalized On Resistance ID = 6A 1.2 0.8 0.4 Tj=150 C o Tj=25 C 1 o RON@Tj=25 C: 16mΩ 0.0 -50 -25 0 25 50 75 0.1 100 125 150 0.0 0.4 0.8 1.2 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.6 5 2500 Frequency=1MHz VDS=10V VGS - Gate - source Voltage (V) IDS= 6A C - Capacitance (pF) 2000 1500 Ciss 1000 Crss 500 0 Coss 4 3 2 1 0 0 4 8 12 16 20 4 8 12 16 20 24 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 0 6 www.anpec.com.tw APM9968CO Packaging Information TSSOP-8 e 8 7 2x E/2 E1 ( 2) E GAUGE PLANE S 1 2 e/2 0.25 D L A2 A b Dim A A1 A2 b D e E E1 L L1 R R1 S φ1 φ2 φ3 1 (L1) ( 3) A1 Millimeters Min. Inches Max. 1.2 0.15 1.05 0.30 3.1 0.00 0.80 0.19 2.9 Min. 0.000 0.031 0.007 0.114 0.65 BSC 6.40 BSC 4.30 0.45 0.026 BSC 0.252 BSC 4.50 0.75 0.169 0.018 8° 0.004 0.004 0.008 0° 1.0 REF 0.09 0.09 0.2 0° 0.177 0.030 0.039REF 12° REF 12° REF Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 Max. 0.047 0.006 0.041 0.012 0.122 8° 12° REF 12° REF 7 www.anpec.com.tw APM9968CO Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 www.anpec.com.tw APM9968CO Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 D1 9 Ko www.anpec.com.tw APM9968CO Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application TSSOP-8 A B J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 330 ± 1 2 + 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 F D D1 Po P1 Ao Bo Ko t 5.5 ± 0. 1 1.5 + 0.1 1.5 + 0.1 4.0 ± 0.1 2.0 ± 0.1 7.0 ± 0.1 3.6 ± 0.3 1.6 ± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application TSSOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 10 www.anpec.com.tw