APT47N60BC3
APT47N60SC3
600V 47A 0.070Ω
Super Junction MOSFET
D3PAK
TO-247
COOLMOS
Power Semiconductors
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT47N60BC3_SC3
UNIT
Drain-Source Voltage
600
Volts
ID
Continuous Drain Current @ TC = 25°C
47
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
VGSM
Gate-Source Voltage Transient
±30
Total Power Dissipation @ TC = 25°C
417
Watts
Linear Derating Factor
3.33
W/°C
VDSS
PD
TJ,TSTG
TL
dv/
dt
IAR
EAR
EAS
1
Amps
141
Operating and Storage Junction Temperature Range
Volts
-55 to 150
°C
Lead Temperature: 0.063" from Case for 10 Sec.
260
Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C)
50
V/ns
Repetitive Avalanche Current
7
20
Amps
Repetitive Avalanche Energy
7
Single Pulse Avalanche Energy
1
4
mJ
1800
STATIC ELECTRICAL CHARACTERISTICS
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance
2
TYP
600
(VGS = 10V, ID = 30A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
0.06
0.07
0.5
25
250
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
2.10
UNIT
Volts
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C)
Gate Threshold Voltage (VDS = VGS, ID = 2.7mA)
MAX
3
Ohms
µA
±100
nA
3.9
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
™
4-2004
BVDSS
Characteristic / Test Conditions
050-7144 Rev E
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT47N60BC3_SC3
Test Conditions
Characteristic
MIN
TYP
C iss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
2565
Reverse Transfer Capacitance
f = 1 MHz
210
VGS = 10V
260
VDD = 300V
29
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 47A @ 25°C
tf
27
VDD = 380V
RG = 1.8Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
8
INDUCTIVE SWITCHING @ 25°C
6
670
VDD = 400V, VGS = 15V
6
ns
110
ID = 47A @ 125°C
Fall Time
nC
18
VGS = 13V
Turn-off Delay Time
pF
110
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
7015
VGS = 0V
3
MAX
ID = 47A, RG = 5Ω
980
INDUCTIVE SWITCHING @ 125°C
1100
VDD = 400V VGS = 15V
µJ
1200
ID = 47A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
47
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -47A, dl S/dt = 100A/µs, VR = 350V)
580
ns
Q
Reverse Recovery Charge (IS = -47A, dl S /dt = 100A/µs, VR = 350V)
23
µC
rr
dv/
dt
Peak Diode Recovery
dv/
141
(Body Diode)
1.2
(VGS = 0V, IS = - 47A)
dt
5
Amps
Volts
6
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.30
62
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID47A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
0.9
0.25
0.7
0.20
Note:
0.5
0.15
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7144 Rev E
4-2004
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
0.3
0.10
0
t1
t2
SINGLE PULSE
0.05
0.1
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-5
10-4
°C/W
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
Junction
temp. (°C)
0.00145
0.0988
0.158
0.00948
0.231
ID, DRAIN CURRENT (AMPERES)
0.0289
0.00308
Power
(watts)
Case temperature (°C)
80
TJ = -55°C
TJ = +25°C
40
TJ = +125°C
20
0
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
30
20
10
0
25
5V
40
4.5V
20
4V
1.40
V
I
D
V
1.30
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
10
20 30 40 50 60 70 80 90
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
1.2
= 47A
GS
NORMALIZED TO
= 10V @ 23.5A
GS
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
0
-50
60
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4-2004
ID, DRAIN CURRENT (AMPERES)
40
2.5
5.5V
80
1.15
50
3
100
050-7144 Rev E
0
6V
120
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
6.5V
140
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
VGS =15 & 10V
160
0.0136
120
APT47N60BC3_SC3
180
RC MODEL
Typical Performance Curves
100
50
100µS
10
5
= 47A
12
VDS= 120V
8
VDS= 300V
VDS= 480V
4
0
0
100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
50
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
= 400V
DD
G
= 5Ω
T = 125°C
tf
J
L = 100µH
250
V
DD
R
G
200
80
= 400V
= 5Ω
T = 125°C
J
L = 100µH
150
100
60
tr
40
20
td(on)
0
10
20
0
40
50
60
70
80
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
30
0
40 50 60
70
80
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
4500
V
DD
R
G
4000
Eoff
= 5Ω
E ON includes
diode reverse recovery.
1500
1000
500
Eon
0
10
SWITCHING ENERGY (µJ)
J
L = 100µH
10
V
= 400V
T = 125°C
2000
SWITCHING ENERGY (µJ)
TJ =+25°C
100
tr and tf (ns)
td(on) and td(off) (ns)
td(off)
2500
4-2004
TJ =+150°C
R
50
050-7144 Rev E
100
120
300
0
Coss
10
350
0
1,000
Crss
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
D
Ciss
100
10mS
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
10,000
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
APT47N60BC3_SC3
30,000
OPERATION HERE
LIMITED BY RDS (ON)
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
188
I
DD
D
20
30
= 400V
Eoff
= 47A
T = 125°C
J
3500
L = 100µH
E ON includes
3000
diode reverse recovery.
2500
2000
1500
Eon
1000
500
20
30
40
50
60
70 80
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
10%
APT47N60BC3_SC3
90%
Gate Voltage
Gate Voltage
TJ = 125 C
TJ = 125 C
td(on)
td(off)
tr
90%
Collector Current
90%
5%
tf
Collector Current
10%
5%
Switching Energy
0
Collector Voltage
Switching Energy
Collector Voltage
10%
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7144 Rev E
0.46 (.018)
0.56 (.022) {3 Plcs}
2.87 (.113)
3.12 (.123)
4-2004
3.50 (.138)
3.81 (.150)