APT8043BFLL
APT8043SFLL
800V
POWER MOS 7
R
FREDFET
20A 0.430Ω
BFLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
SFLL
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
TO-247
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8043BFLL_SFLL
UNIT
Drain-Source Voltage
800
Volts
ID
Continuous Drain Current @ TC = 25°C
20
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
403
Watts
Linear Derating Factor
3.23
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
80
-55 to 150
°C
300
Amps
20
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 10A)
TYP
MAX
UNIT
Volts
0.430
Ohms
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
7-2004
Characteristic / Test Conditions
050-7077 Rev B
Symbol
APT8043BFLL_SFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Ciss
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
3
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 400V
tf
ID = 20A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
300
VDD = 533V, VGS = 15V
130
ID = 20A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
5
RG = 1.6Ω
Eon
UNIT
pF
80
85
13
55
9
5
25
ID = 20A @ 25°C
Turn-off Delay Time
MAX
2500
485
VDD = 400V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
µJ
555
VDD = 533V VGS = 15V
ID = 20A, RG = 5Ω
170
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/
Characteristic / Test Conditions
MIN
TYP
MAX
20
Continuous Source Current (Body Diode)
Amps
Pulsed Source Current
1
(Body Diode)
80
Diode Forward Voltage
2
(VGS = 0V, IS = -20A)
1.3
Volts
18
V/ns
Peak Diode Recovery
dt
UNIT
dv/
5
dt
t rr
Reverse Recovery Time
(IS = -20A, di/dt = 100A/µs)
Tj = 25°C
200
Tj = 125°C
400
Q rr
Reverse Recovery Charge
(IS = -20A, di/dt = 100A/µs)
Tj = 25°C
0.91
Tj = 125°C
3.5
IRRM
Peak Recovery Current
(IS = -20A, di/dt = 100A/µs)
Tj = 25°C
9
Tj = 125°C
14
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.31
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.25
0.7
0.20
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7077 Rev B
7-2004
0.35
0.15
0.3
0.10
0.05
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5
t1
t2
SINGLE PULSE
0.1
10-4
10-3
°C/W
4 Starting Tj = +25°C, L = 6.50mH, RG = 25Ω, Peak IL = 20A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID20A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
UNIT
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
RC MODEL
0.0258
Power
(watts)
0.107
0.177
0.00295F
0.0114F
0.174F
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
APT8043BFLL_SFLL
50
VGS =15 &10 V
40
7.5V
30
7V
20
6.5V
10
6V
Case temperature. (°C)
5.5V
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
50
40
30
TJ = +125°C
TJ = -55°C
10
0
TJ = +25°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
18
16
14
12
10
8
6
4
2
0
25
I
V
D
GS
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
5
10 15
20 25
30 35
40
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
= 5A
= 10V
1.5
1.0
0.5
0.0
-50
D
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
= 10V @ I = 5A
GS
1.30
1.15
20
2.0
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7-2004
20
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
050-7077 Rev B
ID, DRAIN CURRENT (AMPERES)
70
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
80
8V
Typical Performance Curves
80
5,000
OPERATION HERE
LIMITED BY RDS (ON)
10
100µS
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
10mS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
I
D
= 20A
12
VDS=160V
VDS=400V
8
VDS=640V
4
0
1,000
500
Coss
100
Crss
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
C, CAPACITANCE (pF)
Ciss
0
20
40
60
80
100 120 140
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
50
APT8043BFLL_SFLL
10,000
60
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
45
50
V
40
td(off)
G
J
R
G
= 5Ω
T = 125°C
J
30
L = 100µH
20
td(on)
5
1000
10
V
DD
G
SWITCHING ENERGY (µJ)
7-2004
20
15
0
15
tr
20
25
30
35
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
V
= 533V
DD
Eoff
= 533V
= 5Ω
L = 100µH
E ON includes
diode reverse recovery.
600
Eon
400
Eoff
200
10
10
I
J
5
5
D
1000
T = 125°C
800
050-7077 Rev B
25
5
20
25
30
35
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
R
0
tf
10
10
0
L = 100µH
30
= 533V
tr and tf (ns)
DD
15
20
25
30
35
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
td(on) and td(off) (ns)
V
= 533V
= 5Ω
T = 125°C
35
40
DD
R
15
= 20A
T = 125°C
J
L = 100µH
EON includes
800
diode reverse recovery.
600
Eon
400
200
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8043BFLL_SFLL
90%
10%
Gate Voltage
Gate Voltage
TJ125°C
TJ125°C
td(off)
td(on)
tr
90%
90%
10%
0
5%
5%
Drain Voltage
tf
Drain Current
Drain Current
Drain Voltage
10%
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
ID
V DD
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7077 Rev B
0.46 (.018)
0.56 (.022) {3 Plcs}
7-2004
3.50 (.138)
3.81 (.150)