ADPOW APT50GF60JU3

APT50GF60JU3
ISOTOP® Buck chopper
NPT IGBT
VCES = 600V
IC = 50A @ Tc = 90°C
C
Application
· AC and DC motor control
· Switched Mode Power Supplies
G
Features
·
E
A
·
·
·
A
E
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
· Outstanding performance at high frequency operation
· Stable temperature behavior
· Very rugged
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Easy paralleling due to positive TC of VCEsat
C
G
Non Punch Through (NPT) THUNDERBOLT IGBT®
ISOTOPÒ
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA clamped Inductive load Current RG=11Ω
TC = 25°C
TC = 25°C
Max ratings
600
75
50
160
±20
277
100
IFAV
Maximum Average Forward Current
TC = 80°C
30
IFRMS
RMS Forward Current (Square wave, 50% duty)
Continuous Collector Current
Duty cycle=0.5
TC = 25°C
TC = 90°C
TC = 25°C
39
Unit
V
A
V
W
A
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-8
APT50GF60JU3 – Rev 0 April, 2004
Symbol
VCES
IC1
IC2
ICM
VGE
PD
ILM
APT50GF60JU3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, IC = 1mA
Tj = 25°C
VGE = 0V
VCE = 600V
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE, IC = 700µA
VGE = ±20V, VCE = 0V
Min
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Typ
Max
600
4.5
2.1
2.2
5.5
40
1000
2.7
2.8
6.5
±100
Unit
V
µA
V
V
nA
Dynamic Characteristics
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
VGS = 15V
VBus = 300V
IC = 50A
Resistive Switching (25°C)
VGE = 15V
VBus = 300V
IC = 50A
RG = 10W
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 10W
Typ
2250
255
155
175
18
100
29
118
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Ets
Td(on)
Tr
Td(off)
Tf
Eon
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
2.4
Ets
Total switching Losses
4.2
Inductive Switching (150°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 10W
APT website – http://www.advancedpower.com
150
190
30
80
240
43
3.6
28
75
265
185
1.8
Max
Unit
pF
nC
ns
ns
mJ
ns
mJ
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APT50GF60JU3 – Rev 0 April, 2004
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
APT50GF60JU3
Diode ratings and characteristics
Symbol
VF
Characteristic
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance
Reverse Recovery Time
trr
Test Conditions
IF = 30A
IF = 60A
IF = 30A
VR = 600V
VR = 600V
VR = 200V
IF=1A,VR=30V
di/dt =100A/µs
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
23
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
85
160
4
8
130
700
70
1300
30
Reverse Recovery Time
IRRM
Qrr
trr
Qrr
IRRM
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =1000A/µs
Min
Typ
1.6
1.9
1.4
Max
1.8
V
250
500
44
Tj = 125°C
Unit
µA
pF
ns
A
nC
ns
nC
A
Thermal and package characteristics
RthJC
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Min
Typ
IGBT
Diode
Junction to Case
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
APT website – http://www.advancedpower.com
2500
-55
Max
0.45
1.21
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
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APT50GF60JU3 – Rev 0 April, 2004
Symbol Characteristic
APT50GF60JU3
Typical IGBT Performance Curve
0.5
0.9
0.4
0.35
0.7
0.3
0.25
0.5
0.2
0.15
0.1
0.05
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
Figure 7, Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
APT website – http://www.advancedpower.com
4-8
APT50GF60JU3 – Rev 0 April, 2004
Thermal Impedance (°C/W)
0.45
APT website – http://www.advancedpower.com
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APT50GF60JU3 – Rev 0 April, 2004
APT50GF60JU3
APT50GF60JU3
APT website – http://www.advancedpower.com
6-8
APT50GF60JU3 – Rev 0 April, 2004
Typical Diode Performance Curve
APT website – http://www.advancedpower.com
7-8
APT50GF60JU3 – Rev 0 April, 2004
APT50GF60JU3
APT50GF60JU3
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
Anode
30.1 (1.185)
30.3 (1.193)
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Emitter
Gate
ISOTOP® is a Registered Trademark of SGS Thomson
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
8-8
APT50GF60JU3 – Rev 0 April, 2004
Dimensions in Millimeters and (Inches)