APT50GF60JU3 ISOTOP® Buck chopper NPT IGBT VCES = 600V IC = 50A @ Tc = 90°C C Application · AC and DC motor control · Switched Mode Power Supplies G Features · E A · · · A E - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits · Outstanding performance at high frequency operation · Stable temperature behavior · Very rugged · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Easy paralleling due to positive TC of VCEsat C G Non Punch Through (NPT) THUNDERBOLT IGBT® ISOTOPÒ Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA clamped Inductive load Current RG=11Ω TC = 25°C TC = 25°C Max ratings 600 75 50 160 ±20 277 100 IFAV Maximum Average Forward Current TC = 80°C 30 IFRMS RMS Forward Current (Square wave, 50% duty) Continuous Collector Current Duty cycle=0.5 TC = 25°C TC = 90°C TC = 25°C 39 Unit V A V W A A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-8 APT50GF60JU3 – Rev 0 April, 2004 Symbol VCES IC1 IC2 ICM VGE PD ILM APT50GF60JU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 1mA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE, IC = 700µA VGE = ±20V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ Max 600 4.5 2.1 2.2 5.5 40 1000 2.7 2.8 6.5 ±100 Unit V µA V V nA Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time VGS = 15V VBus = 300V IC = 50A Resistive Switching (25°C) VGE = 15V VBus = 300V IC = 50A RG = 10W Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A RG = 10W Typ 2250 255 155 175 18 100 29 118 Td(off) Tf Td(on) Tr Td(off) Tf Ets Td(on) Tr Td(off) Tf Eon Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy 2.4 Ets Total switching Losses 4.2 Inductive Switching (150°C) VGE = 15V VBus = 400V IC = 50A RG = 10W APT website – http://www.advancedpower.com 150 190 30 80 240 43 3.6 28 75 265 185 1.8 Max Unit pF nC ns ns mJ ns mJ 2-8 APT50GF60JU3 – Rev 0 April, 2004 Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr APT50GF60JU3 Diode ratings and characteristics Symbol VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs Min Typ 1.6 1.9 1.4 Max 1.8 V 250 500 44 Tj = 125°C Unit µA pF ns A nC ns nC A Thermal and package characteristics RthJC RthJA VISOL TJ,TSTG TL Torque Wt Min Typ IGBT Diode Junction to Case Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight APT website – http://www.advancedpower.com 2500 -55 Max 0.45 1.21 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g 3-8 APT50GF60JU3 – Rev 0 April, 2004 Symbol Characteristic APT50GF60JU3 Typical IGBT Performance Curve 0.5 0.9 0.4 0.35 0.7 0.3 0.25 0.5 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 Figure 7, Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration APT website – http://www.advancedpower.com 4-8 APT50GF60JU3 – Rev 0 April, 2004 Thermal Impedance (°C/W) 0.45 APT website – http://www.advancedpower.com 5-8 APT50GF60JU3 – Rev 0 April, 2004 APT50GF60JU3 APT50GF60JU3 APT website – http://www.advancedpower.com 6-8 APT50GF60JU3 – Rev 0 April, 2004 Typical Diode Performance Curve APT website – http://www.advancedpower.com 7-8 APT50GF60JU3 – Rev 0 April, 2004 APT50GF60JU3 APT50GF60JU3 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Anode 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP® is a Registered Trademark of SGS Thomson APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 8-8 APT50GF60JU3 – Rev 0 April, 2004 Dimensions in Millimeters and (Inches)