APT6011B2VFR
600V
POWER MOS V ®
49A 0.110W
FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Faster Switching
T-MAX™
D
G
• Popular T-MAX™ Package
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6011B2VFR
UNIT
600
Volts
L
A
C
I
N
H
C N
E
T
O
I
D
T
E
A
C
M
N
R
A
O
V
F
D
A
IN
Drain-Source Voltage
49
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
625
Watts
Linear Derating Factor
5.0
W/°C
VGSM
PD
TJ,TSTG
196
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
300
49
(Repetitive and Non-Repetitive)
1
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
Volts
°C
Amps
50
4
3000
mJ
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
Volts
49
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.110
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-8061 rev- 01-2000
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT6011B2VFR
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
8310
Coss
Output Capacitance
VDS = 25V
990
Crss
Reverse Transfer Capacitance
f = 1 MHz
390
VGS = 10V
370
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
51
156
VGS = 15V
17
VDD = 0.5 VDSS
16
ID = ID [Cont.] @ 25°C
63
RG = 0.6W
6
Qg
Total Gate Charge
3
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
tr
t d(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
UNIT
pF
L
A
C
I
N
H
C N
E
T
O
I
D
T
E
A
C
M
N
R
A
O
V
F
D
A
IN
Qgs
t d(on)
MAX
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
TYP
1
Pulsed Source Current
VSD
Diode Forward Voltage
dv/
Peak Diode Recovery dv/dt
196
(Body Diode)
2
MAX
49
Continuous Source Current (Body Diode)
ISM
dt
MIN
(VGS = 0V, IS = -ID [Cont.])
5
UNIT
Amps
1.3
Volts
5
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
2.0
Tj = 125°C
6.8
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
27
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
Junction to Case
RqJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
UNIT
APT Reserves the right to change, without notice, the specifications and information contained herein.
These dimensions are equal to the TO-247AD without mounting hole.
T-MAX™ Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
°C/W
4 Starting T = +25°C, L = 2.49mH, R = 25W, Peak I = 49A
j
G
L
5 I £ I [Cont.], di/ = 100A/µs, T £ 150°C, R = 2.0W, V = 200V.
S
D
j
G
R
dt
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
050-8061 rev- 01-2000
MAX
0.20
RqJC
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,256,583
4,748,103
5,283,202
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058