APT8014L2FLL
800V 52A 0.140W
POWER MOS 7TM
FREDFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Increased Power Dissipation
• Easier To Drive
• Lower Gate Charge, Qg
• Popular TO-264 MAX Package
MAXIMUM RATINGS
Symbol
VDSS
ID
TO-264
Max
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8014L2FLL
UNIT
800
Volts
Drain-Source Voltage
L
A
C
I
N
H
C
N
E
T
IO
E
T
C MA
N
A OR
V
AD INF
52
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
890
Watts
Linear Derating Factor
7.12
W/°C
VGSM
PD
TJ,TSTG
208
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
°C
300
52
(Repetitive and Non-Repetitive)
1
Amps
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
Volts
52
Amps
On State Drain Current
2
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.140
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-7104 Rev- 9-2001
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8014L2FLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
7710
Coss
Output Capacitance
VDS = 25V
1480
Reverse Transfer Capacitance
f = 1 MHz
244
VGS = 10V
284
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
37
161
VGS = 15V
20
Crss
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
t d(on)
tr
t d(off)
tf
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
Turn-on Delay Time
VDD = 0.5 VDSS
19
ID = ID [Cont.] @ 25°C
69
RG =0.6W
15
Rise Time
Turn-off Delay Time
Fall Time
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
TYP
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
dt
MIN
Peak Diode Recovery
dv/
(Body Diode)
dt
(VGS = 0V, IS = -ID [Cont.])
5
MAX
52
208
UNIT
Amps
1.3
Volts
18
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
440
Tj = 125°C
1100
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
2.0
Tj = 125°C
13
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
30
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RqJC
Junction to Case
RqJA
Junction to Ambient
MIN
TYP
UNIT
0.14
40
1 Repetitive Rating: Pulse width limited by maximum junction
TO-264 MAXTM(L2) Package Outline
APT Reserves the right to change,
without notice, the specifications
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
and information contained herein.
19.51 (.768)
20.50 (.807)
Drain
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 2.37mH, R = 25W, Peak I = 52A
j
G
L
5 dv/ numbers reflect the limitations of the test circuit rather than the
dt
device itself. IS £ -ID Cont. di/dt £ 700A/µs VR £ VDSS TJ £ 150°C
[
]
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
050-7104 Rev- 9-2001
MAX
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058