APT6030BVFR
APT6030SVFR
600V 21A
POWER MOS V® FREDFET
0.300Ω
BVFR
D3PAK
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-247
SVFR
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• FAST RECOVERY BODY DIODE
D
G
• TO-247 or Surface Mount D3PAK Package
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6030BVFR_SVFR
UNIT
600
Volts
Drain-Source Voltage
21
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
298
Watts
Linear Derating Factor
2.38
W/°C
PD
TJ,TSTG
1
84
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
21
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 10.5A)
TYP
MAX
UNIT
Volts
0.300
Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
1-2005
Characteristic / Test Conditions
050-5944 Rev A
Symbol
APT6030BVFR_SVFR
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
430
Reverse Transfer Capacitance
f = 1 MHz
160
Crss
Qg
3
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
MAX
UNIT
3750
VGS = 10V
150
VDD = 300V
18
ID = 21A @ 25°C
60
VGS = 15V
12
VDD = 300V
10
ID = 21A @ 25°C
47
RG = 1.6Ω
8
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Symbol
IS
ISM
MIN
TYP
MAX
21
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
84
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -21A)
1.3
Volts
dv/
Peak Diode Recovery
15
V/ns
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -21A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
525
Q rr
Reverse Recovery Charge
(IS = -21A, di/dt = 100A/µs)
Tj = 25°C
1.5
Tj = 125°C
5.5
IRRM
Peak Recovery Current
(IS = -21A, di/dt = 100A/µs)
Tj = 25°C
13
Tj = 125°C
23
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.42
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
40
0.5
0.05
0.1
0.05
0.01
0.005
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5944 Rev A
1-2005
D=0.5
0.2
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 5.90mH, RG = 25Ω, Peak IL = 21A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID21A di/dt ≤ 700A/µs VR ≤600V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.1
UNIT
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
32
5V
24
4.5V
16
8
4V
TJ = +125°C
8
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
20
15
10
5
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.4
1.3
1.2
VGS=10V
1.1
VGS=20V
1.0
0.9
0
8
16
24
32
40
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
25
= 0.5 I
D
V
GS
-50
1.2
[Cont.]
= 10V
2.0
1.5
1.0
0.5
0.0
-50
0.95
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
1-2005
D
1.00
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5944 Rev A
I
1.05
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
2.5
1.10
0.90
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
V
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
25
0
4V
0
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
16
4.5V
8
1.5
24
5V
16
40
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
5.5V
24
0
0
50
100
150
200
250
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
VGS=6V, 10V & 15V
32
0
32
APT6030BVFR_SVFR
40
VGS=5.5V, 6V, 10V & 15V
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
40
100
10,000
OPERATION HERE
LIMITED BY RDS (ON)
100µS
10
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
50
1mS
5
10mS
1
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
0.5
DC
I = I [Cont.]
D
VDS=120V
16
VDS=300V
12
VDS=480V
8
4
0
Ciss
1,000
Coss
500
50
TJ =+150°C
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
5
3
TO-247 Package Outline (BVFR)
Drain
1-2005
Drain
(Heat Sink)
5.38 (.212)
6.20 (.244)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031) 19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
13.41 (.528)
13.51 (.532)
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
050-5944 Rev A
D PAK Package Outline (SVFR)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
TJ =+25°C
10
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
0
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Crss
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
5 10
50 100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
5,000
100
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
0.1
20
APT6030BVFR_SVFR
15,000
10µS
0.46 (.018)
0.56 (.022)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.40 (.094)
2.70 (.106)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated