APT6015JVFR 600V POWER MOS V ® 35A 0.150W FREDFET S S ® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D G SO 2 T- 27 "UL Recognized" • Faster Switching • Avalanche Energy Rated • Lower Leakage • Popular SOT-227 Package file # E145592 ISOTOP ® D G S All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS ID Parameter APT6015JVFR UNIT 600 Volts Drain-Source Voltage 35 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 450 Watts Linear Derating Factor 3.6 W/°C VGSM PD TJ,TSTG 140 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 35 (Repetitive and Non-Repetitive) 1 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) UNIT Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 600 Volts 35 Amps On State Drain Current 2 (VDS > I D(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX 0.150 (VGS = 10V, 17.5A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 250 Ohms μA Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-7264 Rev A 2-2003 Symbol DYNAMIC CHARACTERISTICS APT6015JVFR Characteristic Symbol Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance TYP MAX 7500 9000 VDS = 25V f = 1 MHz 900 1260 320 480 VGS = 10V 315 475 VDD = 300V ID = 35A @ 25°C 45 125 70 190 VGS = 15V 15 30 VGS = 0V 3 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge Turn-on Delay Time t d(on) Rise Time tr Turn-off Delay Time t d(off) VDD = 300V 13 26 ID = 35A @ 25°C 45 70 RG = 1.6W 5 10 TYP MAX Fall Time tf MIN UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol 35 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv MIN Characteristic / Test Conditions /dt Peak Diode Recovery dv 140 (Body Diode) /dt (VGS = 0V, IS = -35A) 5 Reverse Recovery Time t rr (IS = -35A, di/dt = 100A/μs) Reverse Recovery Charge Q rr (IS = -35A, di/dt = 100A/μs) Peak Recovery Current IRRM di (IS = -35A, /dt = 100A/μs) Volts 15 V/ns 250 Tj = 125°C 500 1.6 Tj = 125°C 5.5 Tj = 25°C 15 Tj = 125°C 27 Amps 1.3 Tj = 25°C Tj = 25°C UNIT ns μC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.28 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2% 3 4 See MIL-STD-750 Method 3471 Starting Tj = +25°C, L = 4.08mH, RG = 25W, Peak IL = 35A Microsemi Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.02 0.005 0.01 Note: SINGLE PULSE PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7264 Rev A 2-2003 0.3 t1 t2 t 0.001 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION UNIT °C/W APT6015JVFR 100 VGS=6V, 7V, 10V & 15V 5.5V 80 60 5V 40 4.5V 20 4V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) TJ = +25°C 80 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 40 TJ = +125°C 20 TJ = +25°C TJ = -55°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 40 30 20 10 0 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 40 4.5V 20 4V 1.6 NORMALIZED TO V GS = 10V @ 17.5A 1.4 VGS=10V 1.2 VGS=20V 1.0 0.8 0 20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 17.5A D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 5V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS TJ = -55°C 60 5.5V 0 0 100 VGS=6V, 7V, 10V & 15V 80 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7264 Rev A 2-2003 ID, DRAIN CURRENT (AMPERES) 100 APT6015JVFR 200 100μS 50 1mS 10 5 10mS 1 100mS DC TC =+25°C TJ =+150°C SINGLE PULSE .5 .1 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I = 35A D VDS=120V VDS=300V VDS=480V 8 4 0 Coss 1,000 Crss 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 12 5,000 100 1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 Ciss 10,000 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 10μS OPERATION HERE LIMITED BY R (ON) DS 100 30,000 0 100 200 300 400 500 600 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 TJ =+150°C TJ =+25°C 50 10 5 1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 050-7264 Rev A 2-2003 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.