APT6015JVFR
600V
POWER MOS V ®
35A 0.150W
FREDFET
S
S
®
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS
V® also achieves faster switching speeds through optimized gate layout.
D
G
SO
2
T-
27
"UL Recognized"
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• Popular SOT-227 Package
file # E145592
ISOTOP ®
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
Parameter
APT6015JVFR
UNIT
600
Volts
Drain-Source Voltage
35
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
450
Watts
Linear Derating Factor
3.6
W/°C
VGSM
PD
TJ,TSTG
140
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
35
(Repetitive and Non-Repetitive)
1
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
UNIT
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
600
Volts
35
Amps
On State Drain Current
2
(VDS > I D(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
MAX
0.150
(VGS = 10V, 17.5A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
250
Ohms
μA
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
050-7264 Rev A 2-2003
Symbol
DYNAMIC CHARACTERISTICS
APT6015JVFR
Characteristic
Symbol
Test Conditions
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
TYP
MAX
7500
9000
VDS = 25V
f = 1 MHz
900
1260
320
480
VGS = 10V
315
475
VDD = 300V
ID = 35A @ 25°C
45
125
70
190
VGS = 15V
15
30
VGS = 0V
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
t d(on)
Rise Time
tr
Turn-off Delay Time
t d(off)
VDD = 300V
13
26
ID = 35A @ 25°C
45
70
RG = 1.6W
5
10
TYP
MAX
Fall Time
tf
MIN
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
35
Continuous Source Current (Body Diode)
IS
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv
MIN
Characteristic / Test Conditions
/dt
Peak Diode Recovery
dv
140
(Body Diode)
/dt
(VGS = 0V, IS = -35A)
5
Reverse Recovery Time
t rr
(IS = -35A, di/dt = 100A/μs)
Reverse Recovery Charge
Q rr
(IS = -35A, di/dt = 100A/μs)
Peak Recovery Current
IRRM
di
(IS = -35A, /dt = 100A/μs)
Volts
15
V/ns
250
Tj = 125°C
500
1.6
Tj = 125°C
5.5
Tj = 25°C
15
Tj = 125°C
27
Amps
1.3
Tj = 25°C
Tj = 25°C
UNIT
ns
μC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.28
40
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3
4
See MIL-STD-750 Method 3471
Starting Tj = +25°C, L = 4.08mH, RG = 25W, Peak IL = 35A
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.02
0.005
0.01
Note:
SINGLE PULSE
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7264 Rev A 2-2003
0.3
t1
t2
t
0.001
10-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
°C/W
APT6015JVFR
100
VGS=6V, 7V, 10V & 15V
5.5V
80
60
5V
40
4.5V
20
4V
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
TJ = +25°C
80
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
40
TJ = +125°C
20
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
40
30
20
10
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
40
4.5V
20
4V
1.6
NORMALIZED TO
V
GS
= 10V @ 17.5A
1.4
VGS=10V
1.2
VGS=20V
1.0
0.8
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
1.2
2.5
I = 17.5A
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
5V
0
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
50
100
150
200
250
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
TJ = -55°C
60
5.5V
0
0
100
VGS=6V, 7V, 10V & 15V
80
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7264 Rev A 2-2003
ID, DRAIN CURRENT (AMPERES)
100
APT6015JVFR
200
100μS
50
1mS
10
5
10mS
1
100mS
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
.1
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I = 35A
D
VDS=120V
VDS=300V
VDS=480V
8
4
0
Coss
1,000
Crss
500
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
12
5,000
100
1
5 10
50 100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
Ciss
10,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
10μS
OPERATION HERE
LIMITED BY R
(ON)
DS
100
30,000
0
100
200
300
400
500
600
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
TJ =+150°C TJ =+25°C
50
10
5
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
050-7264 Rev A 2-2003
30.1 (1.185)
30.3 (1.193)
Drain
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.