ADPOW APTGT50DDA120T3

APTGT50DDA120T3
Dual Boost chopper
Trench IGBT® Power Module
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
22
7
23
8
Q1
Q2
26
4
27
3
29
30
31
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a
single boost of twice the current capability.
Absolute maximum ratings
Symbol
VCES
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Save Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TJ = 125°C
Max ratings
1200
75
50
100
±20
270
100A @ 1150V
Unit
V
September, 2004
CR2
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT50DDA120T3 – Rev 0,
13 14
CR1
VCES = 1200V
IC = 50A @ Tc = 80°C
APTGT50DDA120T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Crss
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy X
Turn-off Switching Energy Y
Test Conditions
VGE = 0V, IC = 2mA
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
Min
1200
Test Conditions
VGE = 0V,VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 50A
R G = 18Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
R G = 18Ω
Min
1.4
5.0
Typ
1.7
2.0
5.8
Typ
3600
160
90
30
420
70
Max
5
2.1
Unit
V
mA
V
6.5
400
V
nA
Max
Unit
pF
ns
90
50
520
90
5
5.5
ns
mJ
X Eon includes diode reverse recovery
Y In accordance with JEDEC standard JESD24-1
VRRM
Test Conditions
Min
IRM
Maximum Reverse Leakage Current
VR=1200V
IF(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
Diode Forward Voltage
IF = 60A
IF = 120A
IF = 60A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
1200
Maximum Peak Repetitive Reverse Voltage
Tj = 25°C
Tj = 125°C
VF
Typ
IF = 60A
VR = 800V
di/dt =200A/µs
V
250
500
Tj = 125°C
60
2
2.3
1.8
Tj = 25°C
400
Tj = 125°C
Tj = 25°C
470
1200
Tj = 125°C
4000
APT website – http://www.advancedpower.com
Unit
µA
A
2.5
V
September, 2004
Symbol Characteristic
ns
nC
2-5
APTGT50DDA120T3 – Rev 0,
Diode ratings and characteristics
APTGT50DDA120T3
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.45
0.9
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
68
4080

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
°C/W
V
150
125
100
4.7
110
°C
N.m
g
12
APT website – http://www.advancedpower.com
3-5
APTGT50DDA120T3 – Rev 0,
28
17
1
September, 2004
Package outline
APTGT50DDA120T3
Typical Performance Curve
Output Characteristics (VGE=15V)
100
Output Characteristics
100
T J = 125°C
TJ=25°C
80
80
V GE=17V
VGE=13V
60
IC (A)
IC (A)
T J=125°C
40
40
20
20
0
VGE=9V
0
0
0.5
1
1.5
2
VCE (V)
2.5
3
0
3.5
12
T J=25°C
80
2
V CE (V)
3
4
V CE = 600V
V GE = 15V
RG = 18Ω
T J = 125°C
10
T J=125°C
8
E (mJ)
60
40
Eoff
6
Eon
4
20
2
0
0
5
6
7
8
9
VGE (V)
10
11
10
12
10
70
90
110
Reverse Safe Operating Area
Eon
100
80
IC (A)
9
50
120
VCE = 600V
VGE =15V
IC = 50A
TJ = 125°C
11
30
IC (A)
Switching Energy Losses vs Gate Resistance
12
E (mJ)
1
Energy losses vs Collector Current
Transfert Characteristics
100
IC (A)
VGE=15V
60
8
7
40
Eoff
6
60
V GE=15V
T J=125°C
RG=18Ω
20
5
4
0
0
20
40
60
Gate Resistance (ohms)
80
0
400
800
V CE (V)
1200
1600
September, 2004
IGBT
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
4-5
APTGT50DDA120T3 – Rev 0,
Thermal Impedance (°C/W)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.5
0.45
0.9
0.4
0.35
0.7
0.3
0.5
0.25
0.2
0.3
0.15
0.1
0.1
0.05
0.05
0
0.00001
APTGT50DDA120T3
Forward Characteristic of diode
160
VC E=600V
D=50%
RG =18Ω
TJ=125°C
TC=75°C
60
40
ZVS
20
140
120
100
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
80
TJ=125°C
80
60
ZCS
TJ =25°C
40
hard
switching
20
0
0
0
10
20
30
IC (A)
40
50
0
60
0.5
1
1.5
VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
1
0.8
Diode
0.9
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT50DDA120T3 – Rev 0,
September, 2004
rectangular Pulse Duration (Seconds)