2N5945 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5945 is Designed for FM Land Mobile Applications in the 400 to 960 MHz. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • Common Emitter • PG = 9.0 dB at 2.0 W/470 MHz • Omnigold™ Metalization System E B E B C D J E MAXIMUM RATINGS IC 0.8 A VCBO 36 V VCEO 16 V VEBO G H K 4.0 V PDISS 15 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 11.6 °C/W MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 MAXIMUM .137 / 3.48 .572 / 14.53 F .130 / 3.30 .245 / 6.22 H .255 / 6.48 .640 / 16.26 I CHARACTERISTICS #8-32 UNC DIM G J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 TC = 25 °C NONETEST CONDITIONS SYMBOL I F MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 16 V BVCES IC = 100 mA 36 V BVEBO IE = 2.0 mA 4.0 V ICBO VCB = 15 V hFE VCE = 5.0 V Cob VCB = 12.5 V PG VCC = 12.5 V ηc IC = 200 mA POUT = 4.0 W 1.0 mA 20 --- --- --- f = 1.0 MHz --- 18 25 pF f = 470 MHz 9.0 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB % REV. B 1/1