Features • Serial Peripheral Interface (SPI) Compatible • Supports SPI Modes 0 (0,0) and 3 (1,1) • Low-voltage and Standard-voltage Operation – 2.7 (VCC = 2.7V to 5.5V) • 3.0 MHz Clock Rate (5V) • 8-byte Page Mode • Block Write Protection – Protect 1/4, 1/2, or Entire Array • Write Protect (WP) Pin and Write Disable Instructions for SPI Serial EEPROMs Both Hardware and Software Data Protection • Self-timed Write Cycle (10 ms max) • High Reliability – Endurance: One Million Write Cycles – Data Retention: 100 Years • Automotive Grade and Extended Temperature Devices Available • 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead MAP and 8-lead TAP Packages 1K (128 x 8) 2K (256 x 8) Description 4K (512 x 8) The AT25010/020/040 provides 1024/2048/4096 bits of serial electrically erasable programmable read only memory (EEPROM) organized as 128/256/512 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low voltage operation are essential. The AT25010/020/040 is available in space saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead MAP and 8-lead TAP packages. The AT25010/020/040 is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of Serial Data Input (SI), Serial Data Output (SO), and Serial Clock (SCK). All programming cycles are completely self-timed, and no separate ERASE cycle is required before WRITE. AT25010 AT25020 AT25040 BLOCK WRITE protection is enabled by programming the status register with one of four blocks of write protection. Separate program enable and program disable instructions are provided for additional data protection. Hardware data protection is provided via the WP pin to protect against inadvertent write attempts. The HOLD pin may be used to suspend any serial communication without resetting the serial sequence. Pin Configurations Pin Name Function CS Chip Select SCK Serial Data Clock SI Serial Data Input SO Serial Data Output GND Ground VCC Power Supply WP Write Protect HOLD Suspends Serial Input 8-lead PDIP CS SO WP GND 1 2 3 4 8 7 6 5 VCC HOLD SCK SI 8-lead SOIC CS SO WP GND 1 2 3 4 VCC HOLD SCK SI 8 7 6 5 8-lead MAP/TAP VCC HOLD SCK SI 8 7 6 5 1 2 3 4 CS SO WP GND Bottom View Rev. 0606J–SEEPR–11/02 1 Absolute Maximum Ratings* Operating Temperature................................. -55°C to + 125°C Storage Temperature .................................... -65°C to + 150°C Voltage on Any Pin with Respect to Ground ....................................-1.0V to + 7.0V Maximum Operating Voltage .......................................... 6.25V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Output Current........................................................ 5.0 mA Block Diagram 2 AT25010/020/040 0606J–SEEPR–11/02 AT25010/020/040 Pin Capacitance (1) Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted). Symbol Test Conditions COUT CIN Note: Max Units Conditions Output Capacitance (SO) 8 pF VOUT = 0V Input Capacitance (CS, SCK, SI, WP, HOLD) 6 pF VIN = 0V 1. This parameter is characterized and is not 100% tested. DC Characteristics Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +2.7V to +5.5V, TAC = 0°C to +70°C, VCC = +1.8V to +5.5V (unless otherwise noted). Symbol Parameter VCC1 Min Max Units Supply Voltage 2.7 5.5 V VCC2 Supply Voltage 4.5 5.5 V ICC1 Supply Current VCC = 5.0V at 1 MHz, SO = Open, Read 3.0 mA ICC2 Supply Current VCC = 5.0V at 2 MHz, SO = Open, Read, Write 6.0 mA ISB1 Standby Current VCC = 2.7V CS = VCC 5 µA ISB2 Standby Current VCC = 5.0V CS = VCC 10 µA IIL Input Leakage VIN = 0V to VCC -0.6 3.0 µA IOL Output Leakage VIN = 0V to VCC, TAC = 0°C to 70°C -0.6 3.0 µA Input Low Voltage -0.6 VCC x 0.3 V Input High Voltage VCC x 0.7 VCC + 0.5 V 0.4 V VIL(2) VIH (2) VOL1 Output Low Voltage VOH1 Output High Voltage VOL2 Output Low Voltage VOH2 Output High Voltage Note: Test Condition 4.5V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V IOL = 2.0 mA IOH = -1.0 mA VCC - 0.8 IOL = 0.15 mA IOH = -100 µA V 0.2 VCC - 0.2 V V 1. This parameter is preliminary and Atmel may change the specifications upon further characterization. 2. VIL min and VIH max are reference only and are not tested. 3 0606J–SEEPR–11/02 AC Characteristics Applicable over recommended operating range from TA = -40°C to +85°C, VCC = As Specified, CL = 1 TTL Gate and 100 pF (unless otherwise noted). Symbol Parameter Voltage Min Max Units fSCK SCK Clock Frequency 4.5 - 5.5 2.7 - 5.5 0 0 3.0 2.1 MHz tRI Input Rise Time 4.5 - 5.5 2.7 - 5.5 2 2 µs tFI Input Fall Time 4.5 - 5.5 2.7 - 5.5 2 2 µs tWH SCK High Time 4.5 - 5.5 2.7 - 5.5 133 200 ns tWL SCK Low Time 4.5 - 5.5 2.7 - 5.5 133 200 ns tCS CS High Time 4.5 - 5.5 2.7 - 5.5 250 250 ns tCSS CS Setup Time 4.5 - 5.5 2.7 - 5.5 250 250 ns tCSH CS Hold Time 4.5 - 5.5 2.7 - 5.5 250 250 ns tSU Data In Setup Time 4.5 - 5.5 2.7 - 5.5 50 50 ns tH Data In Hold Time 4.5 - 5.5 2.7 - 5.5 50 100 ns tHD Hold Setup Time 4.5 - 5.5 2.7 - 5.5 100 100 ns tCD Hold Hold Time 4.5 - 5.5 2.7 - 5.5 200 200 ns tV Output Valid 4.5 - 5.5 2.7 - 5.5 0 0 tHO Output Hold Time 4.5 - 5.5 2.7 - 5.5 0 0 tLZ Hold to Output Low Z 4.5 - 5.5 2.7 - 5.5 0 0 tHZ Hold to Output High Z tDIS tWC Endurance(1) Note: 4 133 200 ns ns 100 100 ns 4.5 - 5.5 2.7 - 5.5 100 100 ns Output Disable Time 4.5 - 5.5 2.7 - 5.5 250 500 ns Write Cycle Time 4.5 - 5.5 2.7 - 5.5 5 10 ms 5.0V, 25°C, Page Mode 1M Write Cycles 1. This parameter is characterized and is not 100% tested. AT25010/020/040 0606J–SEEPR–11/02 AT25010/020/040 Serial Interface Description MASTER: The device that generates the serial clock. SLAVE: Because the Serial Clock pin (SCK) is always an input, the AT25010/020/040 always operates as a slave. TRANSMITTER/RECEIVER: The AT25010/020/040 has separate pins designated for data transmission (SO) and reception (SI). MSB: The Most Significant Bit (MSB) is the first bit transmitted and received. SERIAL OP-CODE: After the device is selected with CS going low, the first byte will be received. This byte contains the op-code that defines the operations to be performed. The op-code also contains address bit A8 in both the READ and WRITE instructions. INVALID OP-CODE: If an invalid op-code is received, no data will be shifted into the AT25010/020/040, and the serial output pin (SO) will remain in a high impedance state until the falling edge of CS is detected again. This will reinitialize the serial communication. CHIP SELECT: The AT25010/020/040 is selected when the CS pin is low. When the device is not selected, data will not be accepted via the SI pin, and the serial output pin (SO) will remain in a high impedance state. HOLD: The HOLD pin is used in conjunction with the CS pin to select the AT25010/020/040. When the device is selected and a serial sequence is underway, HOLD can be used to pause the serial communication with the master device without resetting the serial sequence. To pause, the HOLD pin must be brought low while the SCK pin is low. To resume serial communication, the HOLD pin is brought high while the SCK pin is low (SCK may still toggle during HOLD). Inputs to the SI pin will be ignored while the SO pin is in the high impedance state. WRITE PROTECT: The write protect pin (WP) will allow normal read/write operations when held high. When the WP pin is brought low, all write operations are inhibited. WP going low while CS is still low will interrupt a write to the AT25010/020/040. If the internal write cycle has already been initiated, WP going low will have no effect on any write operation. 5 0606J–SEEPR–11/02 SPI Serial Interface Functional Description The AT25010/020/040 is designed to interface directly with the synchronous serial peripheral interface (SPI) of the 6805 and 68HC11 series of microcontrollers. The AT25010/020/040 utilizes an 8-bit instruction register. The list of instructions and their operation codes are contained in Table 1. All instructions, addresses, and data are transferred with the MSB first and start with a high-to-low CS transition. Table 1. Instruction Set for the AT25010/020/040 Instruction Name Instruction Format Operation WREN 0000 X110 Set Write Enable Latch WRDI 0000 X100 Reset Write Enable Latch RDSR 0000 X101 Read Status Register WRSR 0000 X001 Write Status Register READ 0000 A011 Read Data from Memory Array WRITE 0000 A010 Write Data to Memory Array Note: 6 “A” represents MSB address bit A8. AT25010/020/040 0606J–SEEPR–11/02 AT25010/020/040 WRITE ENABLE (WREN): The device will power up in the write disable state when VCC is applied. All programming instructions must therefore be preceded by a Write Enable instruction. The WP pin must be held high during a WREN instruction. WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the Write Disable instruction disables all programming modes. The WRDI instruction is independent of the status of the WP pin. READ STATUS REGISTER (RDSR): The Read Status Register instruction provides access to the status register. The READY/BUSY and Write Enable status of the device can be determined by the RDSR instruction. Similarly, the Block Write Protection bits indicate the extent of protection employed. These bits are set by using the WRSR instruction. Table 2. Status Register Format Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 X X X X BP1 BP0 WEN RDY Table 3. Read Status Register Bit Definition Bit Definition Bit 0 (RDY) Bit 0 = 0 (RDY) indicates the device is READY. Bit 0 = 1 indicates the write cycle is in progress. Bit 1 (WEN) Bit 1 = 0 indicates the device is not WRITE ENABLED. Bit 1 = 1 indicates the device is WRITE ENABLED. Bit 2 (BP0) See Table 4. Bit 3 (BP1) See Table 4. Bits 4-7 are 0s when device is not in an internal write cycle. Bits 0-7 are 1s during an internal write cycle. WRITE STATUS REGISTER (WRSR): The WRSR instruction allows the user to select one of four levels of protection. The AT25010/020/040 is divided into four array segments. Top quarter (1/4), Top half (1/2), or all of the memory segments can be protected. Any of the data within any selected segment will therefore be READ only. The block write protection levels and corresponding status register control bits are shown in Table 4. The two bits, BP1 and BP0 are nonvolatile cells that have the same properties and functions as the regular memory cells (e.g. WREN, tWC, RDSR). Table 4. Block Write Protect Bits Status Register Bits Array Addresses Protected Level BP1 BP0 AT25010 AT25020 AT25040 0 0 0 None None None 1 (1/4) 0 1 60-7F C0-FF 180-1FF 2 (1/2) 1 0 40-7F 80-FF 100-1FF 3 (All) 1 1 00-7F 00-FF 000-1FF 7 0606J–SEEPR–11/02 READ SEQUENCE (READ): Reading the AT25010/020/040 via the SO (Serial Output) pin requires the following sequence. After the CS line is pulled low to select a device, the READ op-code (including A8) is transmitted via the SI line followed by the byte address to be read (A7-A0). Upon completion, any data on the SI line will be ignored. The data (D7-D0) at the specified address is then shifted out onto the SO line. If only one byte is to be read, the CS line should be driven high after the data comes out. The READ sequence can be continued since the byte address is automatically incremented and data will continue to be shifted out. When the highest address is reached, the address counter will roll over to the lowest address allowing the entire memory to be read in one continuous READ cycle. WRITE SEQUENCE (WRITE): In order to program the AT25010/020/040, the Write Protect pin (WP) must be held high and two separate instructions must be executed. First, the device must be write enabled via the Write Enable (WREN) Instruction. Then a Write (WRITE) Instruction may be executed. Also, the address of the memory location(s) to be programmed must be outside the protected address field location selected by the Block Write Protection Level. During an internal write cycle, all commands will be ignored except the RDSR instruction. A Write Instruction requires the following sequence. After the CS line is pulled low to select the device, the WRITE op-code (including A8) is transmitted via the SI line followed by the byte address (A7-A0) and the data (D7-D0) to be programmed. Programming will start after the CS pin is brought high. (The LOW to High transition of the CS pin must occur during the SCK low time immediately after clocking in the D0 (LSB) data bit. The READY/BUSY status of the device can be determined by initiating a READ STATUS REGISTER (RDSR) Instruction. If Bit 0 = 1, the WRITE cycle is still in progress. If Bit 0 = 0, the WRITE cycle has ended. Only the READ STATUS REGISTER instruction is enabled during the WRITE programming cycle. The AT25010/020/040 is capable of an 8-byte PAGE WRITE operation. After each byte of data is received, the three low order address bits are internally incremented by one; the six high order bits of the address will remain constant. If more than 8 bytes of data are transmitted, the address counter will roll over and the previously written data will be overwritten. The AT25010/020/040 is automatically returned to the write disable state at the completion of a WRITE cycle. NOTE: If the WP pin is brought low or if the device is not Write enabled (WREN), the device will ignore the Write instruction and will return to the standby state, when CS is brought high. A new CS falling edge is required to re-initiate the serial communication. 8 AT25010/020/040 0606J–SEEPR–11/02 AT25010/020/040 Timing Diagrams Synchronous Data Timing (for mode 0) t CS VIH CS VIL t CSH t CSS VIH t WH SCK t WL VIL tH t SU VIH SI VALID IN VIL tV VOH SO HI-Z t HO t DIS HI-Z VOL WREN Timing WRDI Timing 9 0606J–SEEPR–11/02 RDSR Timing CS 0 1 2 3 4 5 6 7 8 9 10 7 6 5 11 12 13 14 2 1 SCK INSTRUCTION SI SO DATA OUT HIGH IMPEDANCE 4 3 0 MSB WRSR Timing CS 0 1 2 3 4 5 6 7 8 9 10 11 7 6 5 4 12 13 14 15 2 1 0 SCK INSTRUCTION SI SO DATA IN 3 HIGH IMPEDANCE READ Timing 10 AT25010/020/040 0606J–SEEPR–11/02 AT25010/020/040 WRITE Timing CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 7 6 SCK INSTRUCTION SI BYTE ADDRESS 8 5 4 3 2 1 DATA IN 0 7 6 5 4 3 2 1 0 9TH BIT OF ADDRESS SO HIGH IMPEDANCE HOLD Timing CS tCD tCD SCK tHD tHD HOLD tHZ SO tLZ 11 0606J–SEEPR–11/02 AT25010 Ordering Information Ordering Code Package AT25010-10PI-2.7 AT25010N-10SI-2.7 AT25010Y1-10YI-2.7 AT25010Y2-10YI-2.7 8P3 8S1 8Y1 8Y2 Industrial (-40°C to 85°C) AT25010N-10SE-2.7 8S1 High Grade/Extended Temperature (-40°C to 125°C) Note: Operation Range For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics tables. Package Type 8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC) 8Y1 8-lead, 4.90 x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP) 8Y2 8-lead, 6.40 x 3.00 mm Body, Dual Footprint, Non-leaded, Thin Array Package (TAP) Options -2.7 12 Low Voltage (2.7V to 5.5V) AT25010/020/040 0606J–SEEPR–11/02 AT25010/020/040 AT25020 Ordering Information Ordering Code Package AT25020-10PI-2.7 AT25020N-10SI-2.7 AT25020Y1-10YI-2.7 AT25020Y2-10YI-2.7 8P3 8S1 8Y1 8Y2 Industrial (-40°C to 85°C) AT25020N-10SE-2.7 8S1 High Grade/Extended Temperature (-40°C to 125°C) Note: Operation Range For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics tables. Package Type 8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC) 8Y1 8-lead, 4.90 x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP) 8Y2 8-lead, 6.40 x 3.00 mm Body, Dual Footprint, Non-leaded, Thin Array Package (TAP) Options -2.7 Low Voltage (2.7V to 5.5V) 13 0606J–SEEPR–11/02 AT25040 Ordering Information Ordering Code Package AT25040-10PI-2.7 AT25040N-10SI-2.7 AT25040Y1-10YI-2.7 AT25040Y2-10YI-2.7 8P3 8S1 8Y1 8Y2 Industrial (-40°C to 85°C) AT25040N-10SE-2.7 8S1 High Grade/Extended Temperature (-40°C to 125°C) Note: Operation Range For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics tables. Package Type 8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC) 8Y1 8-lead, 4.90 x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP) 8Y2 8-lead, 6.40 x 3.00 mm Body, Dual Footprint, Non-leaded, Thin Array Package (TAP) Options -2.7 14 Low Voltage (2.7V to 5.5V) AT25010/020/040 0606J–SEEPR–11/02 AT25010/020/040 Packaging Information 8P3 – PDIP E 1 E1 N Top View c eA End View COMMON DIMENSIONS (Unit of Measure = inches) D e D1 A2 A MIN NOM A2 0.115 0.130 0.195 b 0.014 0.018 0.022 5 b2 0.045 0.060 0.070 6 b3 0.030 0.039 0.045 6 c 0.008 0.010 0.014 D 0.355 0.365 0.400 SYMBOL A b2 b3 b 4 PLCS Side View L 0.210 NOTE 2 3 D1 0.005 E 0.300 0.310 0.325 4 E1 0.240 0.250 0.280 3 3 e 0.100 BSC eA 0.300 BSC L Notes: MAX 0.115 0.130 4 0.150 2 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information. 2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3. 3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch. 4. E and eA measured with the leads constrained to be perpendicular to datum. 5. Pointed or rounded lead tips are preferred to ease insertion. 6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm). 01/09/02 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 8P3, 8-lead, 0.300" Wide Body, Plastic Dual In-line Package (PDIP) DRAWING NO. REV. 8P3 B 15 0606J–SEEPR–11/02 8S1 – JEDEC SOIC 3 2 1 H N Top View e B A D COMMON DIMENSIONS (Unit of Measure = mm) Side View A2 C L SYMBOL MIN NOM MAX A – – 1.75 B – – 0.51 C – – 0.25 D – – 5.00 E – – 4.00 e E End View NOTE 1.27 BSC H – – 6.20 L – – 1.27 Note: This drawing is for general information only. Refer to JEDEC Drawing MS-012 for proper dimensions, tolerances, datums, etc. 10/10/01 R 16 2325 Orchard Parkway San Jose, CA 95131 TITLE 8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing Small Outline (JEDEC SOIC) DRAWING NO. REV. 8S1 A AT25010/020/040 0606J–SEEPR–11/02 AT25010/020/040 8Y1 – MAP PIN 1 INDEX AREA A 1 3 2 4 PIN 1 INDEX AREA E1 D1 D L 8 6 5 b A1 E 7 e A COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX A – – 0.90 A1 0.00 – 0.05 D 4.70 4.90 5.10 E 2.80 3.00 3.20 D1 0.85 1.00 1.15 E1 0.85 1.00 1.15 b 0.25 0.30 0.35 e L NOTE 0.65 TYP 0.50 0.60 0.70 7/25/02 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 8Y1, 8-lead (4.90 x 3.00 mm Body) MSOP Array Package (MAP) Y1 DRAWING NO. REV. 8Y1 B 17 0606J–SEEPR–11/02 8Y2 – TAP A PIN 1 INDEX AREA PIN 1 INDEX AREA D D1 E1 e b L A1 E COMMON DIMENSIONS (Unit of Measure = mm) A SYMBOL MIN NOM MAX A – – 0.90 A1 0.00 – 0.05 D 6.20 6.40 6.60 E 2.80 3.00 3.20 D1 2.85 3.00 3.15 E1 0.85 1.00 1.15 b 0.20 0.25 0.30 e L NOTE 0.65 TYP 0.30 0.40 0.50 7/25/02 R 18 2325 Orchard Parkway San Jose, CA 95131 TITLE 8Y2, 8-lead (6.40 x 3.00 mm Body) TSSOP Array Package (TAP) Y2 DRAWING NO. REV. 8Y2 A AT25010/020/040 0606J–SEEPR–11/02 Atmel Headquarters Atmel Operations Corporate Headquarters Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 487-2600 Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland TEL (41) 26-426-5555 FAX (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong TEL (852) 2721-9778 FAX (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL (81) 3-3523-3551 FAX (81) 3-3523-7581 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany TEL (49) 71-31-67-0 FAX (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France TEL (33) 2-40-18-18-18 FAX (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems. ATMEL ® is a registered trademark of Atmel. Terms and product names in this document may be trademarks of others. Printed on recycled paper. 0606J–SEEPR–11/02 xM