ATMEL AT49BV512-12JC

Features
•
•
•
•
•
•
•
•
•
•
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Fast Read Access Time - 120 ns
Internal Program Control and Timer
8K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 30 µs/Byte typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49BV512 is a 3-volt-only, 512K Flash memories organized as 65,536 words of
8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the
devices offer access times to 120 ns with power dissipation of just 90 mW over the
commercial temperature range. When the devices are deselected, the CMOS standby
current is less than 50 µA.
To allow for simple in-system reprogrammability, the AT49BV512 does not require
high input voltages for programming. Three-volt-only commands determine the read
and programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49BV512 is performed by erasing
the entire 1 megabit of memory and then programming on a byte by byte basis. The
(continued)
Pin Configurations
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
NC
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Top View
A12
A15
NC
NC
VCC
WE
NC
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
4
3
2
1
32
31
30
Addresses
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
14
15
16
17
18
19
20
A0 - A15
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
Rev. 1026C–09/98
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
Function
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
AT49BV512
DIP Top View
Pin Name
A11
A9
A8
A13
A14
NC
WE
VCC
NC
NC
A15
A12
A7
A6
A5
A4
512K (64K x 8)
Single 2.7-volt
Battery-Voltage™
Flash Memory
1
typical byte programming time is a fast 30 µs. The end of a
program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has
been detected, a new access for a read or program can
begin. The typical number of program and erase cycles is
in excess of 10,000 cycles.
The optional 8K bytes boot block section includes a reprogramming write lock out feature to provide data integrity.
The boot sector is designed to contain user secure code,
and when the feature is enabled, the boot sector is permanently protected from being reprogrammed.
Block Diagram
DATA INPUTS/OUTPUTS
I/O0 - I/O7
VCC
GND
OE
WE
CE
ADDRESS
INPUTS
OE, CE AND WE
LOGIC
DATA LATCH
INPUT/OUTPUT
BUFFERS
Y DECODER
Y-GATING
X DECODER
MAIN MEMORY
(56K BYTES)
OPTIONAL BOOT
BLOCK (8K BYTES)
FFFFH
2000H
1FFFH
0000H
Device Operation
READ: The AT49BV512 is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dualline control gives designers flexibility in preventing bus contention.
ERASURE: Before a byte can be reprogrammed, the 64K
bytes memory array (or 56K bytes if the boot block featured
is used) must be erased. The erased state of the memory
bits is a logical “1”. The entire device can be erased at one
time by using a 6-byte software code. The software chip
erase code consists of 6-byte load commands to specific
address locations with a specific data pattern (please refer
to the Chip Erase Cycle Waveforms).
After the software chip erase has been initiated, the device
will internally time the erase operation so that no external
clocks are required. The maximum time needed to erase
the whole chip is tEC. If the boot block lockout feature has
been enabled, the data in the boot sector will not be
erased.
BYTE PROGRAMMING: Once the memory array is
erased, the device is programmed (to a logical “0”) on a
byte-by-byte basis. Please note that a data “0” cannot be
2
AT49BV512
programmed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is accomplished via the
internal device command register and is a 4 bus cycle operation (please refer to the Command Definitions table). The
device will automatically generate the required internal program pulses.
The program cycle has addresses latched on the falling
edge of WE or CE, whichever occurs last, and the data
latched on the rising edge of WE or CE, whichever occurs
first. Programming is completed after the specified t BP
cycle time. The DATA polling feature may also be used to
indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the feature has been enabled. The
size of the block is 8K bytes. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be activated; the boot block’s usage as a write protected region is
optional to the user. The address range of the boot block is
0000H to 1FFFH.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed. Data in the main
memory block can still be changed through the regular programming method. To activate the lockout feature, a series
of six program commands to specific addresses with specific data must be performed. Please refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the software product identification mode (see Software Product
Identification Entry and Exit sections) a read from address
location 00002H will show if programming the boot block is
locked out. If the data on I/O0 is low, the boot block can be
programmed; if the data on I/O0 is high, the program lockout feature has been activated and the block cannot be
programmed. The software product identification code
should be used to return to standard operation.
PRODUCT IDENTIFICATION: The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external programmer to identify the correct programming algorithm for
the Atmel product.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
AT49BV512
DATA POLLING: The AT49BV512 features DATA polling
to indicate the end of a program cycle. During a program
cycle an attempted read of the last byte loaded will result in
the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all
outputs and the next cycle may begin. DATA polling may
begin at any time during the program cycle.
TOGGLE BIT: In addition to DATA polling the AT49BV512
provides another method for determining the end of a program or erase cycle. During a program or erase operation,
successive attempts to read data from the device will result
in I/O6 toggling between one and zero. Once the program
cycle has completed, I/O6 will stop toggling and valid data
will be read. Examining the toggle bit may begin at any
time during a program cycle.
HARDWARE DATA PROTECTION: Hardware features
protect against inadvertent programs to the AT49BV512 in
the following ways: (a) V CC sense: if V CC is below 1.8V
(typical), the program function is inhibited. (b) Program
inhibit: holding any one of OE low, CE high or WE high
inhibits program cycles. (c) Noise filter: Pulses of less than
15 ns (typical) on the WE or CE inputs will not initiate a program cycle.
INPUT LEVELS: While operating with a 2.7V to 3.6V
power supply, the address inputs and control inputs (OE,
CE and WE) may be driven from 0 to 5.5V without
adversely affecting the operation of the device. The I/O
lines can only be driven from 0 to VCC + 0.6V.
Command Definition (in Hex)
Command
Sequence
1st Bus
Cycle
Bus
Cycles
Addr
Data
Read
1
Addr
DOUT
Chip Erase
6
5555
Byte
Program
4
Boot Block
Lockout(1)
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
AA
2AAA
55
5555
80
5555
AA
2AAA
55
5555
10
5555
AA
2AAA
55
5555
A0
Addr
DIN
6
5555
AA
2AAA
55
5555
80
5555
AA
2AAA
55
5555
40
Product ID
Entry
3
5555
AA
2AAA
55
5555
90
Product ID
Exit(2)
3
5555
AA
2AAA
55
5555
F0
Product ID
Exit(2)
1
XXXX
F0
Notes:
1. The 8K byte boot sector has the address range 0000H to 1FFFH.
2. Either one of the Product ID exit commands can be used.
Absolute Maximum Ratings*
Temperature Under Bias ............................... -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V
3
DC and AC Operating Range
Com.
AT49BV512-12
AT49BV512-15
0°C - 70°C
0°C - 70°C
-40°C - 85°C
-40°C - 85°C
2.7V to 3.6V
2.7V to 3.6V
Operating Temperature (Case)
Ind.
VCC Power Supply
Operating Modes
Mode
Read
(2)
Program
Standby/Write Inhibit
CE
OE
WE
Ai
I/O
VIL
VIL
VIH
Ai
DOUT
VIL
VIH
VIL
Ai
DIN
X
High Z
(1)
VIH
X
X
Program Inhibit
X
X
VIH
Program Inhibit
X
VIL
X
Output Disable
X
VIH
X
VIL
VIL
VIH
High Z
Product Identification
Hardware
A1 - A15 = VIL, A9 = VH,(3)
A0 = VIL
Manufacturer Code(4)
A1 - A15 = VIL, A9 = VH,(3)
A0 = VIH
Device Code(4)
Software(5)
Notes:
A0 = VIL, A1 - A15 = VIL
Manufacturer Code(4)
A0 = VIH, A1 - A15 = VIL
Device Code(4)
1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1FH, Device Code: 03H.
5. See details under Software Product Identification Entry/Exit.
DC Characteristics
Symbol
Parameter
Condition
ILI
Input Load Current
ILO
Max
Units
VIN = 0V to VCC
10
µA
Output Leakage Current
VI/O = 0V to VCC
10
µA
ISB1
VCC Standby Current CMOS
CE = VCC - 0.3V to VCC
50
µA
ISB2
VCC Standby Current TTL
CE = 2.0V to VCC
1
mA
ICC(1)
VCC Active Current
f = 5 MHz; IOUT = 0 mA
25
mA
VIL
Input Low Voltage
0.6
V
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 2.1 mA
Output High Voltage
IOH = -100 µA; VCC = 3.0V
VOH
Note:
4
1. In the erase mode, ICC is 50 mA.
AT49BV512
Min
2.0
V
0.45
2.4
V
V
AT49BV512
AC Read Characteristics
Symbol
Parameter
tACC
AT49BV512-12
AT49BV512-15
Min
Min
Max
Max
Units
Address to Output Delay
120
150
ns
tCE
(1)
CE to Output Delay
120
150
ns
tOE
(2)
OE to Output Delay
50
0
70
ns
30
0
40
ns
tDF (3, 4)
CE or OE to Output Float
0
tOH
Output Hold from OE, CE or Address, whichever occurred first
0
0
ns
AC Read Waveforms(1)(2)(3)(4)
ADDRESS
ADDRESS VALID
CE
tCE
OE
tACC
OUTPUT
Notes:
HIGH Z
tDF
tOH
OUTPUT VALID
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE whichever occurs frist (CL - 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
AC
DRIVING
LEVELS
2.4V
Output Test Load
3.0V
AC
MEASUREMENT
LEVEL
1.5V
0.4V
1.8K
OUTPUT
PIN
tR, tF < 5 ns
1.3K
100 pF
Pin Capacitance
f = 1 MHz, T = 25°C(1)
Typ
Max
Units
Conditions
CIN
4
6
pF
VIN = 0V
COUT
8
12
pF
VOUT = 0V
Note:
1. This parameter is characterized and is not 100% tested.
5
AC Byte Load Characteristics
Symbol
Parameter
Min
tAS, tOES
Address, OE Set-up Time
tAH
Address Hold Time
tCS
Max
Units
0
ns
100
ns
Chip Select Set-up Time
0
ns
tCH
Chip Select Hold Time
0
ns
tWP
Write Pulse Width (WE or CE)
200
ns
tDS
Data Set-up Time
100
ns
tDH, tOEH
Data, OE Hold Time
0
ns
tWPH
Write Pulse Width High
200
ns
AC Byte Load Waveforms
WE Controlled
OE
tOES
tOEH
ADDRESS
tAS
tAH
tCH
CE
tCS
WE
tWP
tDS
tWPH
tDH
DATA IN
CE Controlled
OE
tOES
tOEH
ADDRESS
tAS
tAH
tCH
WE
tCS
CE
tWP
tDS
DATA IN
6
AT49BV512
tWPH
tDH
AT49BV512
Program Cycle Characteristics
Symbol
Parameter
Min
tBP
Byte Programming Time
tAS
Address Set-up Time
tAH
Typ
Max
Units
µs
30
0
ns
Address Hold Time
100
ns
tDS
Data Set-up Time
100
ns
tDH
Data Hold Time
0
ns
tWP
Write Pulse Width
200
ns
tWPH
Write Pulse Width High
200
ns
tEC
Erase Cycle Time
10
seconds
Program Cycle Waveforms
PROGRAM CYCLE
OE
CE
tWP
tWPH
tBP
WE
tAS
A0-A15
tDH
tAH
5555
2AAA
5555
ADDRESS
tDS
AA
DATA
55
INPUT
DATA
A0
Chip Erase Cycle Waveforms
OE
CE
tWP
tWPH
WE
tAS
A0-A15
tDH
tAH
5555
2AAA
5555
5555
2AAA
5555
tDS
DATA
Note:
tEC
AA
55
80
AA
55
10
BYTE 0
BYTE 1
BYTE 2
BYTE 3
BYTE 4
BYTE 5
OE must be high only when WE and CE are both low.
7
Data Polling Characteristics(1)
Symbol
Parameter
Min
tDH
Data Hold Time
tOEH
OE Hold Time
Max
OE to Output Delay
tWR
Write Recovery Time
Units
0
ns
10
ns
(2)
tOE
Notes:
Typ
ns
0
ns
1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
Data Polling Waveforms
WE
CE
tOEH
OE
tDH
tOE
tWR
I/O7
A0-A15
An
An
An
An
An
Toggle Bit Characteristics(1)
Symbol
Parameter
tDH
Data Hold Time
0
ns
tOEH
OE Hold Time
10
ns
tOE
OE to Output Delay(2)
tOEHP
OE High Pulse
tWR
Write Recovery Time
Notes:
Min
Typ
Max
Units
ns
150
ns
0
ns
1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
Toggle Bit Waveforms(1)(2)(3)
WE
CE
tOEH
tOEHP
OE
tDH
I/O6
Notes:
tOE
tWR
HIGH Z
1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling
input(s).
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
8
AT49BV512
AT49BV512
Software Product
Identification Entry(1)
Boot Block Lockout Feature
Enable Algorithm(1)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 90
TO
ADDRESS 5555
LOAD DATA 80
TO
ADDRESS 5555
ENTER PRODUCT
IDENTIFICATION
MODE(2)(3)(5)
LOAD DATA AA
TO
ADDRESS 5555
Software Product
Identification Exit(1)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA F0
TO
ANY ADDRESS
OR
LOAD DATA 40
TO
ADDRESS 5555
EXIT PRODUCT
IDENTIFICATION
MODE(4)
PAUSE 1 second(2)
LOAD DATA F0
TO
ADDRESS 5555
Notes:
1.
Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2.
Boot block lockout feature enabled.
EXIT PRODUCT
IDENTIFICATION
MODE(4)
Notes:
1.
Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2.
A1 - A15 = VIL.
Manufacture Code is read for A0 = VIL;
Device Code is read for A0 = VIH.
3.
The device does note remain in identification mode
if powered down.
4.
The device returns to standard operation mode.
5.
Manufacturers Code: 1FH
Device Code: 03H.
9
Ordering Information(1)
ICC (mA)
tACC
(ns)
Active
Standby
Ordering Code
Package
120
25
0.05
AT49BV512-12JC
AT49BV512-12PC
AT49BV512-12TC
AT49BV512-12VC
32J
32P6
32T
32V
Commercial
(0°C - 70°C)
25
0.05
AT49BV512-12JI
AT49BV512-12PI
AT49BV512-12TI
AT49BV512-12VI
32J
32P6
32T
32V
Industrial
(-40°C - 85°C)
25
0.05
AT49BV512-15JC
AT49BV512-15PC
AT49BV512-15TC
AT49BV512-15VC
32J
32P6
32T
32V
Commercial
(0°C - 70°C)
25
0.05
AT49BV512-15JI
AT49BV512-15PI
AT49BV512-15TI
AT49BV512-15VI
32J
32P6
32T
32V
Industrial
(-40°C - 85°C)
150
Note:
1. The AT49BV512 has as optional boot block feature. The part number shown in the Ordering Information table is for devices
with the boot block in the lower address range (i.e., 0000H to 1FFFH). Users requiring boot block protection to be in the
higher address range should contact Atmel.
Package Type
32J
32-Lead, Plastic J-Leaded Chip Carrier Package (PLCC)
32P6
32-Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)
32T
32-Lead, Thin Small Outline Package (TSOP) (8 x 20 mm)
32V
32-Lead, Thin Small Outline Package (VSOP) (8 x 14 mm)
10
Operation Range
AT49BV512
AT49BV512
Packaging Information
32J, 32-Lead, Plastic J-Leaded Chip Carrier (PLCC)
Dimensions in Inches and (Millimeters)
.045(1.14) X 45°
PIN NO. 1
IDENTIFY
.050(1.27) TYP
1.67(42.4)
1.64(41.7)
.025(.635) X 30° - 45°
.012(.305)
.008(.203)
.553(14.0)
.547(13.9)
.595(15.1)
.585(14.9)
.032(.813)
.026(.660)
32P6, 32-Lead, 0.600” Wide, Plastic Dual Inline
Package (PDIP)
Dimensions in Inches and (Millimeters)
.300(7.62) REF
.430(10.9)
.390(9.90)
AT CONTACT
POINTS
PIN
1
.530(13.5)
.490(12.4)
.566(14.4)
.530(13.5)
.021(.533)
.013(.330)
.030(.762)
.015(3.81)
.095(2.41)
.060(1.52)
.140(3.56)
.120(3.05)
.090(2.29)
MAX
1.500(38.10) REF
.220(5.59)
MAX
.005(.127)
MIN
SEATING
PLANE
.065(1.65)
.015(.381)
.022(.559)
.014(.356)
.161(4.09)
.125(3.18)
.022(.559) X 45° MAX (3X)
.453(11.5)
.447(11.4)
.495(12.6)
.485(12.3)
.630(16.0)
.590(15.0)
0 REF
15
.012(.305)
.008(.203)
32T, 32-Lead, Plastic Thin Small Outline Package
(TSOP) Dimensions in Millimeters and (Inches)*
JEDEC OUTLINE MO-142 BD
.690(17.5)
.610(15.5)
32V, 32-Lead, Plastic Thin Small Outline Package
(VSOP)
Dimensions in Millimeters (Inches)
INDEX
MARK
INDEX
MARK
18.5(.728)
18.3(.720)
0.50(.020)
BSC
.065(1.65)
.041(1.04)
.110(2.79)
.090(2.29)
7.50(.295)
REF
20.2(.795)
19.8(.780)
12.5(.492)
12.3(.484)
0.50(.020)
BSC
0.25(.010)
0.15(.006)
8.20(.323)
7.80(.307)
7.50(.295)
REF
0.25(.010)
0.15(.006)
8.10(.319)
7.90(.311)
1.20(.047) MAX
0.15(.006)
0.05(.002)
14.2(.559)
13.8(.543)
1.20(.047) MAX
0.15(.006)
0.05(.002)
0
5 REF
0.20(.008)
0.10(.004)
0.70(.028)
0.50(.020)
0
5 REF
0.20(.008)
0.10(.004)
0.70(.028)
0.50(.020)
*Controlling dimensions: millimeters
11