Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 55 ns Internal Program Control and Timer Sector Architecture – One 16K Byte Boot Block with Programming Lockout – Two 8K Byte Parameter Blocks – Two Main Memory Blocks (32K, 64K) Bytes Fast Erase Cycle Time - 10 seconds Byte By Byte Programming - 10 µs/Byte Typical Hardware Data Protection DATA Polling for End of Program Detection Low Power Dissipation – 50 mA Active Current – 100 µA CMOS Standby Current Typical 10,000 Write Cycles 1-Megabit (128K x 8) 5-volt Only Flash Memory Description The AT49F001(N)(T) is a 5-volt-only in-system reprogrammable Flash Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipation of just 275 mW over the commercial temperature range. (continued) Pin Configurations Pin Name Function A0 - A16 Addresses CE Chip Enable OE Output Enable WE Write Enable RESET RESET I/O0 - I/O7 Data Inputs/Outputs NC No Connect DC Don’t Connect DIP Top View * RESET A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND A12 A15 A16 RESET * VCC WE NC 4 3 2 1 32 31 30 29 28 27 26 25 24 23 22 21 I/O1 I/O2 GND I/O3 I/O4 I/O5 I/O6 14 15 16 17 18 19 20 5 6 7 8 9 10 11 12 13 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC WE NC A14 A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 VSOP Top View (8 x 14 mm) or TSOP Top View (8 x 20 mm) Type 1 PLCC Top View A7 A6 A5 A4 A3 A2 A1 A0 I/O0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 AT49F001 AT49F001N AT49F001T AT49F001NT A14 A13 A8 A9 A11 OE A10 CE I/O7 A11 A9 A8 A13 A14 NC WE VCC * RESET A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 Rev. 1008B–07/98 *Note: This pin is a DC on the AT49F001N(T). 1 When the device is deselected, the CMOS standby current is less than 100 µA. For the AT49F001NT pin 1 for the DIP and PLCC packages and pin 9 for the TSOP package are don’t connect pins. To allow for simple in-system reprogrammability, the AT49F001(N)(T) does not require high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus contention. Reprogramming the AT49F001(N)(T) is performed by erasing a block of data and then programming on a byte by byte basis. The byte programming time is a fast 50 µs. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles. The device is erased by executing the erase command sequence; the device internally controls the erase operations. There are two 8K byte parameter block sections and two main memory blocks. The device has the capability to protect the data in the boot block; this feature is enabled by a command sequence. The 16K-byte boot block section includes a reprogramming lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is protected from being reprogrammed. In the AT49F001N(T), once the boot block programming lockout feature is enabled, the contents of the boot block are permanent and cannot be changed. In the AT49F001(T), once the boot block programming lockout feature is enabled, the contents of the boot block cannot be changed with input voltage levels of 5.5 volts or less. Block Diagram AT49F001(N) DATA INPUTS/OUTPUTS I/O7 - I/O0 VCC GND OE WE CE RESET 8 CONTROL LOGIC Y DECODER ADDRESS INPUTS AT49F001(N)T DATA INPUTS/OUTPUTS I/O7 - I/O0 8 INPUT/OUTPUT BUFFERS INPUT/OUTPUT BUFFERS PROGRAM DATA LATCHES PROGRAM DATA LATCHES Y-GATING Y-GATING 1FFFF X DECODER MAIN MEMORY BLOCK 2 (64K BYTES) MAIN MEMORY BLOCK 1 (32K BYTES) PARAMETER BLOCK 2 (8K BYTES) PARAMETER BLOCK 1 (8K BYTES) BOOT BLOCK (16K BYTES) 10000 0FFFF 08000 07FFF 06000 05FFF 04000 03FFF 00000 2 AT49F001(N)(T) 1FFFF BOOT BLOCK (16K BYTES) PARAMETER BLOCK 1 (8K BYTES) PARAMETER BLOCK 2 (8K BYTES) MAIN MEMORY BLOCK 1 (32K BYTES) MAIN MEMORY BLOCK 2 (64K BYTES) 1C000 1BFFF 1A000 19FFF 18000 17FFF 10000 0FFFF 00000 AT49F001(N)(T) Device Operation READ: The AT49F001(N)(T) is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention. COMMAND SEQUENCES: When the device is first powered on it will be reset to the read or standby mode depending upon the state of the control line inputs. In order to perform other device functions, a series of command sequences are entered into the device. The command sequences are shown in the Command Definitions table. The command sequences are written by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Standard microprocessor write timings are used. The address locations used in the command sequences are not affected by entering the command sequences. RESET: A RESET input pin is provided to ease some system applications. When RESET is at a logic high level, the device is in its standard operating mode. A low level on the RESET input halts the present device operation and puts the outputs of the device in a high impedence state. If the RESET pin makes a high to low transition during a program or erase operation, the operation may not be sucessfully completed and the operation will have to be repeated after a high level is applied to the RESET pin. When a high level is reasserted on the RESET pin, the device returns to the read or standby mode, depending upon the state of the control inputs. By applying a 12V ± 0.5V input signal to the RESET pin, the boot block array can be reprogrammed even if the boot block lockout feature has been enabled (see Boot Block Programming Lockout Override section). The RESET feature is not available for the AT49F001N(T). ERASURE: Before a byte can be reprogrammed, the main memory block or parameter block which contains the byte must be erased. The erased state of the memory bits is a logical “1”. The entire device can be erased at one time by using a 6-byte software code. The software chip erase code consists of 6-byte load commands to specific address locations with a specific data pattern (please refer to the Chip Erase Cycle Waveforms). After the software chip erase has been initiated, the device will internally time the erase operation so that no external clocks are required. The maximum time needed to erase the whole chip is tEC. If the boot block lockout feature has been enabled, the data in the boot sector will not be erased. CHIP ERASE: If the boot block lockout has been enabled, the Chip Erase function will erase Parameter Block 1, Parameter Block 2, Main Memory Block 1, and Main Memory Block 2 but not the boot block. If the Boot Block Lockout has not been enabled, the Chip Erase function will erase the entire chip. After the full chip erase the device will return back to read mode. Any command during chip erase will be ignored. SECTOR ERASE: As an alternative to a full chip erase, the device is organized into sectors that can be individually erased. There are two 8K-byte parameter block sections and two main memory blocks. The 8K-byte parameter block sections can be independently erased and reprogrammed. The two main memory sections are designed to be used as alternative memory sectors. That is, whenever one of the blocks has been erased and reprogrammed, the other block should be erased and reprogrammed before the first block is again erased. The Sector Erase command is a six bus cycle operation. The sector address is latched on the falling WE edge of the sixth cycle while the 30H data input command is latched at the rising edge of WE. The sector erase starts after the rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will automatically time to completion. BYTE PROGRAMMING: Once the memory array is erased, the device is programmed (to a logical “0”) on a byte-by-byte basis. Please note that a data “0” cannot be programmed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is accomplished via the internal device command register and is a 4 bus cycle operation (please refer to the Command Definitions table). The device will automatically generate the required internal program pulses. The program cycle has addresses latched on the falling edge of WE or CE, whichever occurs last, and the data latched on the rising edge of WE or CE, whichever occurs first. Programming is completed after the specified tBP cycle time. The DATA polling feature may also be used to indicate the end of a program cycle. BOOT BLOCK PROGRAMMING LOCKOUT: The device has one designated block that has a programming lockout feature. This feature prevents programming of data in the designated block once the feature has been enabled. The size of the block is 16K bytes. This block, referred to as the boot block, can contain secure code that is used to bring up the system. Enabling the lockout feature will allow the boot code to stay in the device while data in the rest of the device is updated. This feature does not have to be activated; the boot block’s usage as a write protected region is optional to the user. The address range of the boot block is 00000 to 03FFF for the AT49F001(N) while the address 3 range of the boot block is 1C000 to 1FFFF for the AT49F001(N)T. Once the feature is enabled, the data in the boot block can no longer be erased or programmed with input voltage levels of 5.5V or less. Data in the main memory block can still be changed through the regular programming method. To activate the lockout feature, a series of six program commands to specific addresses with specific data must be performed. Please refer to the Command Definitions table. BOOT BLOCK LOCKOUT DETECTION: A software method is available to determine if programming of the boot block section is locked out. When the device is in the software product identification mode (see Software Product Identification Entry and Exit sections) a read from address location 00002H will show if programming the boot block is locked out for the AT49F001(N) and a read from address 1C002H will show if programming the boot block is locked out for the AT49F001(N)T. If the data on I/O0 is low, the boot block can be programmed; if the data on I/O0 is high, the program lockout feature has been activated and the block cannot be programmed. The software product identification exit code should be used to return to standard operation. BOOT BLOCK PROGRAMMING LOCKOUT OVERRIDE: The user can override the boot block programming lockout by taking the RESET pin to 12 volts. By doing this, protected boot block data can be altered through a chip erase, sector erase or word programming. When the RESET pin is brought back to TTL levels the boot block programming lockout feature is again active. This feature is not available on the AT49F001N(T). 4 AT49F001(N)(T) PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware operation mode can be used by an external programmer to identify the correct programming algorithm for the Atmel product. For details, see Operating Modes (for hardware operation) or Software Product Identification. The manufacturer and device code is the same for both modes. DATA POLLING: The AT49F001(N)(T) features DATA polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. DATA polling may begin at any time during the program cycle. TOGGLE BIT: In addition to DATA polling the AT49F001(N)(T) provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a program cycle. HARDWARE DATA PROTECTION: Hardware features protect against inadvertent programs to the AT49F001(N)(T) in the following ways: (a) V CC sense: if VCC is below 3.8V (typical), the program function is inhibited. (b) Program inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (c) Noise filter: pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle. AT49F001(N)(T) Command Definition (in Hex)(1) Command Sequence 1st Bus Cycle Bus Cycles Addr Data Read 1 Addr DOUT Chip Erase 6 5555 AA 2nd Bus Cycle 3rd Bus Cycle 4th Bus Cycle Data Addr Data Addr Data Addr Data Addr Data 2AAA 55 5555 80 5555 AA 2AAA 55 5555 10 2AAA 55 (4) SA 30 2AAA 55 5555 40 6 5555 AA 2AAA 55 5555 80 5555 AA Byte Program 4 5555 AA 2AAA 55 5555 A0 Addr DIN Boot Block Lockout(2) 6 5555 AA 2AAA 55 5555 80 5555 AA Product ID Entry 3 5555 AA 2AAA 55 5555 90 (3) 3 5555 AA 2AAA 55 5555 F0 (3) 1 XXXX F0 Product ID Exit Notes: 6th Bus Cycle Addr Sector Erase Product ID Exit 5th Bus Cycle 1. The DATA FORMAT in each bus cycle is as follows: I/O7 - I/O0 (Hex) 2. The 16K byte boot sector has the address range 00000H to 03FFFH for the AT49F001(N) and 1C000H to 1FFFFH for the AT49F001(N)T. 3. Either one of the Product ID Exit commands can be used. 4. SA = sector addresses For the AT49F001(N): SA = 10000 to 1FFFF for BOOT BLOCK Nothing will happen and the device goes back to the read mode in 100 ns SA = 04000 to 05FFF for PARAMETER BLOCK 1 SA = 06000 to 07FFF for PARAMETER BLOCK 2 SA = 08000 to 0FFFF for MAIN MEMORY ARRAY BLOCK 1 This command will erase - PB1, PB2 and MMB1 SA = 10000 to 1FFFF for MAIN MEMORY ARRAY BLOCK 2 For the AT49F001(N)T: SA = 1C000 to 1FFFF for BOOT BLOCK Nothing will happen and the device goes back to the read mode in 100 ns SA = 1A000 to 1BFFF for PARAMETER BLOCK 1 SA = 18000 to 19FFF for PARAMETER BLOCK 2 SA = 10000 to 17FFF for MAIN MEMORY ARRAY BLOCK 1 This command will erase - PB1, PB2 and MMB1 SA = 00000 to 0FFFF for MAIN MEMORY ARRAY BLOCK 2 Absolute Maximum Ratings* Temperature Under Bias ................................ -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Voltage on OE with Respect to Ground ...................................-0.6V to +13.5V 5 DC and AC Operating Range Operating Temperature (Case) AT49F001(N)(T)-55 AT49F001(N)(T)-70 AT49F001(N)(T)-90 AT49F001(N)(T)-12 0°C - 70°C 0°C - 70°C 0°C - 70°C 0°C - 70°C -40°C - 85°C -40°C - 85°C -40°C - 85°C -40°C - 85°C 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10% Com. Ind. VCC Power Supply Operating Modes Mode Read Program/Erase (2) Standby/Write Inhibit CE OE WE RESET(6) Ai VIL VIL VIH VIH Ai DOUT VIL VIH VIL VIH Ai DIN X High Z (1) VIH X X VIH Program Inhibit X X VIH VIH Program Inhibit X VIL X VIH Output Disable X VIH X VIH Reset X X X VIL I/O High Z X High Z Product Identification Hardware VIL VIL VIH Software(5) Notes: A1 - A16 = VIL, A9 = VH,(3) A0 = VIL Manufacturer Code(4) A1 - A16 = VIL, A9 = VH,(3) A0 = VIH Device Code(4) A0 = VIL, A1 - A16=VIL Manufacturer Code(4) A0 = VIH, A1 - A16=VIL Device Code(4) 1. X can be VIL or VIH. 2. Refer to AC Programming Waveforms. 3. VH = 12.0V ± 0.5V. 4. Manufacturer Code: 1FH, Device Code: 05H - AT49F001(N), 04H - AT49F001(N)T 5. See details under Software Product Identification Entry/Exit. 6. This pin is not available on the AT49F001N(T). DC Characteristics Symbol Parameter Condition ILI Input Load Current ILO Max Units VIN = 0V to VCC 10 µA Output Leakage Current VI/O = 0V to VCC 10 µA Com. 100 ISB1 CE = VCC - 0.3V to VCC µA VCC Standby Current CMOS Ind. 300 µA ISB2 VCC Standby Current TTL CE = 2.0V to VCC 3 mA ICC(1) VCC Active Current f = 5 MHz; IOUT = 0 mA 50 mA VIL Input Low Voltage 0.8 V VIH Input High Voltage VOL Output Low Voltage IOL = 2.1 mA VOH1 Output High Voltage IOH = -400 µA 2.4 V VOH2 Output High Voltage CMOS IOH = -100 µA; VCC = 4.5V 4.2 V Note: 6 1. In the erase mode, ICC is 90 mA. AT49F001(N)(T) Min 2.0 V .45 V AT49F001(N)(T) AC Read Characteristics AT49F001(N)(T)-50 Symbol Parameter Max Min AT49F001(N)(T)-90 Max Min Max AT49F001(N)(T)-12 Min Max Units Address to Output Delay 50 70 90 120 ns (1) CE to Output Delay 50 70 90 120 ns (2) OE to Output Delay 0 30 0 35 0 40 0 50 ns (3)(4) CE or OE to Output Float 0 25 0 25 0 25 0 30 ns Output Hold from OE, CE or Address, whichever occurred first 0 tACC tCE tOE tDF Min AT49F001(N)(T)-70 tOH 0 0 0 ns AC Read Waveforms (1)(2)(3)(4) ADDRESS ADDRESS VALID CE OE tCE tOE t DF tOH tACC OUTPUT Notes: HIGH Z OUTPUT VALID 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. Input Test Waveform and Measurement Level Output Load Test 55 ns 70/90/120 ns 5.0V 5.0V 1.3K tR, tF < 5 ns 1.8K OUTPUT PIN 30 pF 1.8K 1.3K OUTPUT PIN 100 pF Pin Capacitance (f = 1 MHz, T = 25°C) (1) CIN COUT Note: Typ Max Units Conditions 4 6 pF VIN = 0V 8 12 pF VOUT = 0V 1. This parameter is characterized and is not 100% tested. 7 AC Byte Load Characteristics Symbol Parameter Min tAS, tOES Address, OE Set-up Time 0 ns tAH Address Hold Time 50 ns tCS Chip Select Set-up Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width (WE or CE) 90 ns tDS Data Set-up Time 50 ns tDH, tOEH Data, OE Hold Time 0 ns tWPH Write Pulse Width High 90 ns AC Byte Load Waveforms WE Controlled OE tOES tOEH ADDRESS CE WE tAS tAH tCH tCS tWPH tWP tDH tDS DATA IN CE Controlled OE tOES tOEH ADDRESS tAS tAH tCH WE tCS CE tWPH tWP tDS DATA IN 8 AT49F001(N)(T) tDH Max Units AT49F001(N)(T) Program Cycle Characteristics Symbol Parameter Min Typ Max Units tBP Byte Programming Time 10 50 µs tAS Address Set-up Time 0 ns tAH Address Hold Time 50 ns tDS Data Set-up Time 50 ns tDH Data Hold Time 0 ns tWP Write Pulse Width 90 ns tWPH Write Pulse Width High 90 ns tEC Erase Cycle Time 10 seconds Program Cycle Waveforms PROGRAM CYCLE OE CE tWP tBP tWPH WE tAS A0-A16 tAH tDH 5555 5555 2AAA ADDRESS tDS DATA 55 AA INPUT DATA A0 Sector or Chip Erase Cycle Waveforms OE (1) CE tWP tWPH WE tAS A0-A16 tAH tDH 5555 5555 5555 2AAA Note 2 2AAA tEC tDS DATA Notes: AA 55 80 AA 55 Note 3 BYTE 0 BYTE 1 BYTE 2 BYTE 3 BYTE 4 BYTE 5 1. OE must be high only when WE and CE are both low. 2. For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased. (See note 4 under command definitions.) 3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H. 9 Data Polling Characteristics(1) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time Min Max OE to Output Delay tWR Write Recovery Time Units 10 ns 10 ns (2) tOE Notes: Typ ns 0 ns 1. These parameters are characterized and not 100% tested. 2. See tOE spec in AC Read Characteristics. DATA Polling Waveforms WE CE tOEH OE tDH tOE I/O7 A0-A16 An tWR HIGH Z An An An An Toggle Bit Characteristics(1) Symbol Parameter tDH Data Hold Time 10 ns tOEH OE Hold Time 10 ns tOE OE to Output Delay(2) tOEHP OE High Pulse tWR Write Recovery Time Notes: Min Typ Max Units ns 150 ns 0 ns 1. These parameters are characterized and not 100% tested. 2. See tOE spec in AC Read Characteristics. Toggle Bit Waveforms(1)(2)(3) WE CE tOEH tOEHP OE tDH tOE I/O6 Notes: 10 HIGH Z tWR 1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling input(s). 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. AT49F001(N)(T) AT49F001(N)(T) Software Product Identification Entry(1) Boot Block Lockout Feature Enable Algorithm(1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 80 TO ADDRESS 5555 LOAD DATA 90 TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 ENTER PRODUCT IDENTIFICATION MODE(2)(3)(5) LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 40 TO ADDRESS 5555 Software Product Identification Exit(1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA OR LOAD DATA F0 TO ANY ADDRESS EXIT PRODUCT IDENTIFICATION MODE(4) PAUSE 1 second(2) Notes for boot block lockout feature enable: 1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex). 2. Boot block lockout feature enabled. LOAD DATA F0 TO ADDRESS 5555 EXIT PRODUCT IDENTIFICATION MODE(4) Notes for software product identification 1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex). 2. A1 - A16 = VIL. Manufacture Code is read for A0 = VIL; Device Code is read for A0 = VIH. 3. The device does not remain in identification mode if powered down. 4. The device returns to standard operation mode. 5. Manufacturer Code: 1FH Device Code: 05H - AT49F001(N) 04H - AT49F001(N)T 11 AT49F001 Ordering Information ICC (mA) tACC (ns) Active Standby Ordering Code Package 55 50 0.1 AT49F001-55JC AT49F001-55PC AT49F001-55TC AT49F001-55VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001-55JI AT49F001-55PI AT49F001-55TI AT49F001-55VI 32J 32P6 32T 32V Industrial (-40° to 85°C) 50 0.1 AT49F001-70JC AT49F001-70PC AT49F001-70TC AT49F001-70VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001-70JI AT49F001-70PI AT49F001-70TI AT49F001-70VI 32J 32P6 32T 32V Industrial (-40° to 85°C) 50 0.1 AT49F001-90JC AT49F001-90PC AT49F001-90TC AT49F001-90VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001-90JI AT49F001-90PI AT49F001-90TI AT49F001-90VI 32J 32P6 32T 32V Industrial (-40° to 85°C) 50 0.1 AT49F001-12JC AT49F001-12PC AT49F001-12TC AT49F001-12VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001-12JI AT49F001-12PI AT49F001-12TI AT49F001-12VI 32J 32P6 32T 32V Industrial (-40° to 85°C) 70 90 120 Package Type 32J 32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC) 32P6 32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP) 32T 32-Lead, Plastic Thin Small Outline Package (TSOP) 32V 32-Lead, Plastic Thin Small Outline Package (TSOP) (8 x 14 mm) 12 AT49F001(N)(T) Operation Range AT49F001(N)(T) AT49F001N Ordering Information ICC (mA) tACC (ns) Active Standby 55 50 70 90 120 Ordering Code Package Operation Range 0.1 AT49F001N-55JC AT49F001N-55PC AT49F001N-55TC AT49F001N-55VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001N-55JI AT49F001N-55PI AT49F001N-55TI AT49F001N-55VI 32J 32P6 32T 32V Industrial (-40° to 85°C) 50 0.1 AT49F001N-70JC AT49F001N-70PC AT49F001N-70TC AT49F001N-70VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001N-70JI AT49F001N-70PI AT49F001N-70TI AT49F001N-70VI 32J 32P6 32T 32V Industrial (-40° to 85°C) 50 0.1 AT49F001N-90JC AT49F001N-90PC AT49F001N-90TC AT49F001N-90VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001N-90JI AT49F001N-90PI AT49F001N-90TI AT49F001N-90VI 32J 32P6 32T 32V Industrial (-40° to 85°C) 50 0.1 AT49F001N-12JC AT49F001N-12PC AT49F001N-12TC AT49F001N-12VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001N-12JI AT49F001N-12PI AT49F001N-12TI AT49F001N-12VI 32J 32P6 32T 32V Industrial (-40° to 85°C) Package Type 32J 32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC) 32P6 32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP) 32T 32-Lead, Plastic Thin Small Outline Package (TSOP) 32V 32-Lead, Plastic Thin Small Outline Package (TSOP) (8 x 14 mm) 13 AT49F001T Ordering Information ICC (mA) tACC (ns) Active Standby 55 50 70 90 120 Ordering Code Package 0.1 AT49F001T-55JC AT49F001T-55PC AT49F001T-55TC AT49F001T-55VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001T-55JI AT49F001T-55PI AT49F001T-55TI AT49F001T-55VI 32J 32P6 32T 32V Industrial (-40° to 85°C) 50 0.1 AT49F001T-70JC AT49F001T-70PC AT49F001T-70TC AT49F001T-70VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001T-70JI AT49F001T-70PI AT49F001T-70TI AT49F001T-70VI 32J 32P6 32T 32V Industrial (-40° to 85°C) 50 0.1 AT49F001T-90JC AT49F001T-90PC AT49F001T-90TC AT49F001T-90VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001T-90JI AT49F001T-90PI AT49F001T-90TI AT49F001T-90VI 32J 32P6 32T 32V Industrial (-40° to 85°C) 50 0.1 AT49F001T-12JC AT49F001T-12PC AT49F001T-12TC AT49F001T-12VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001T-12JI AT49F001T-12PI AT49F001T-12TI AT49F001T-12VI 32J 32P6 32T 32V Industrial (-40° to 85°C) Package Type 32J 32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC) 32P6 32-Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) 32T 32-Lead, Plastic Thin Small Outline Package (TSOP) 32V 32-Lead, Plastic Thin Small Outline Package (TSOP) (8 x 14 mm) 14 AT49F001(N)(T) Operation Range AT49F001(N)(T) AT49F001NT Ordering Information tACC (ns) ICC (mA) 55 70 90 120 Ordering Code Package Operation Range 50 0.1 AT49F001NT-55JC AT49F001NT-55PC AT49F001NT-55TC AT49F001NT-55VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001NT-55JI AT49F001NT-55PI AT49F001NT-55TI AT49F001NT-55VI 32J 32P6 32T 32V Industrial (-40° to 85°C) 50 0.1 AT49F001NT-70JC AT49F001NT-70PC AT49F001NT-70TC AT49F001NT-70VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001NT-70JI AT49F001NT-70PI AT49F001NT-70TI AT49F001NT-70VI 32J 32P6 32T 32V Industrial (-40° to 85°C) 50 0.1 AT49F001NT-90JC AT49F001NT-90PC AT49F001NT-90TC AT49F001NT-90VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001NT-90JI AT49F001NT-90PI AT49F001NT-90TI AT49F001NT-90VI 32J 32P6 32T 32V Industrial (-40° to 85°C) 50 0.1 AT49F001NT-12JC AT49F001NT-12PC AT49F001NT-12TC AT49F001NT-12VC 32J 32P6 32T 32V Commercial (0° to 70°C) 50 0.3 AT49F001NT-12JI AT49F001NT-12PI AT49F001NT-12TI AT49F001NT-12VI 32J 32P6 32T 32V Industrial (-40° to 85°C) Package Type 32J 32P6 32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC) 32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP) 32T 32-Lead, Plastic Thin Small Outline Package (TSOP) 32V 32-Lead, Plastic Thin Small Outline Package (TSOP) (8 x 14 mm) 15 AT49F001(N)(T) Packaging Information 32J, 32-Lead, Plastic J-Leaded Chip Carrier (PLCC) Dimensions in Inches and (Millimeters) JEDEC STANDARD MS-016 AE .045(1.14) X 45° PIN NO. 1 IDENTIFY .050(1.27) TYP 1.67(42.4) 1.64(41.7) .025(.635) X 30° - 45° .012(.305) .008(.203) .553(14.0) .547(13.9) .595(15.1) .585(14.9) .032(.813) .026(.660) 32P6, 32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP) Dimensions in Inches and (Millimeters) .300(7.62) REF .430(10.9) .390(9.90) AT CONTACT POINTS PIN 1 .530(13.5) .490(12.4) .566(14.4) .530(13.5) .021(.533) .013(.330) .030(.762) .015(3.81) .095(2.41) .060(1.52) .140(3.56) .120(3.05) .090(2.29) MAX 1.500(38.10) REF .220(5.59) MAX .005(.127) MIN SEATING PLANE .065(1.65) .015(.381) .022(.559) .014(.356) .161(4.09) .125(3.18) .022(.559) X 45° MAX (3X) .453(11.5) .447(11.4) .495(12.6) .485(12.3) .065(1.65) .041(1.04) .110(2.79) .090(2.29) .630(16.0) .590(15.0) 0 REF 15 .012(.305) .008(.203) 32T, 32-Lead, Plastic Thin Small Outline Package (TSOP) Dimensions in Millimeters and (Inches)* .690(17.5) .610(15.5) 32V, 32-Lead, Plastic Thin Small Outline Package (TSOP) Dimensions in Millimeters and (Inches)* JEDEC OUTLINE MO-142 BA INDEX MARK INDEX MARK 18.5(.728) 18.3(.720) 0.50(.020) BSC 7.50(.295) REF 12.5(.492) 12.3(.484) 20.2(.795) 19.8(.780) 0.50(.020) BSC 0.25(.010) 0.15(.006) 8.20(.323) 7.80(.307) 7.50(.295) REF 0.25(.010) 0.15(.006) 8.10(.319) 7.90(.311) 1.20(.047) MAX 14.2(.559) 13.8(.543) 1.20(.047) MAX 0.15(.006) 0.05(.002) 0.15(.006) 0.05(.002) 0 5 REF 0.20(.008) 0.10(.004) 0.70(.028) 0.50(.020) *Controlling dimension: millimeters 0 5 REF 0.20(.008) 0.10(.004) 0.70(.028) 0.50(.020) *Controlling dimension: millimeters 16