VISHAY BA980-GS08

BA980
Vishay Semiconductors
RF PIN Diode
Features
D Wide frequency range 10 MHz to 1 GHz
Applications
96 12009
Current controlled HF resistance in adjustable
attenuators
Order Instruction
Type
Ordering Code
BA980 – GS08
BS980 – GS18
BA980
Remarks
Tape and Reel ( 2.500 pcs )
Tape and Reel ( 10.000 pcs )
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
VR
IF
Tj
Tstg
Value
30
50
125
–55...+125
Unit
V
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
RthJA
Value
500
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Diode capacitance
Differential forward
resistance
Reverse impedance
Minority carrier lifetime
Document Number 85636
Rev. 1, 26-Mar-01
Test Conditions
IF=20mA
VR=30 V
f=100MHz, VR=0
f=100MHz, IF=1.5mA
f=100MHz, VR=0
IF=10mA, IR=10mA
Type
Symbol
VF
IR
CD
rf
Min
zr
5
t
Typ
40
Max
1
50
0.5
60
Unit
V
nA
pF
W
W
ms
k
4
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BA980
Vishay Semiconductors
Characteristics (Tj = 25_C unless otherwise specified)
IF – Forward Current ( mA )
100
10
Tamb= 25°C
1
Scattering Limit
0.1
0.01
0
95 9735
0.4
0.8
1.2
1.6
2.0
VF – Forward Voltage ( V )
Figure 1. Forward Current vs. Forward Voltage
Dimensions in mm
96 12071
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Document Number 85636
Rev. 1, 26-Mar-01
BA980
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85636
Rev. 1, 26-Mar-01
www.vishay.com
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