VISHAY BA282

BA282.BA283
Vishay Telefunken
Silicon Planar Diodes
Features
D Low differential forward resistance
D Low diode capacitance
D High reverse impedance
Applications
94 9367
Band switching in VHF–tuners
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
VR
IF
Tj
Tstg
Value
35
100
150
–55...+150
Unit
V
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Document Number 85526
Rev. 2, 01-Apr-99
Test Conditions
l=4mm, TL=constant
Symbol
RthJA
Value
350
Unit
K/W
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BA282.BA283
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Diode capacitance
Test Conditions
IF=100mA
VR=20 V
f=100MHz, VR=1V
f=100MHz, VR=3V
Differential forward
resistance
f=200MHz, IF=3mA
f=200MHz, IF=10mA
Reverse impedance
Type
Symbol
VF
IR
CD
CD
CD
rf
rf
rf
rf
zr
BA282
BA283
BA282
BA283
BA282
BA283
f=100MHz, VR=1V
Min
Typ
Max
1
50
1.5
1.25
1.2
0.7
1.2
0.5
0.9
Unit
V
nA
pF
pF
pF
W
W
W
W
kW
100
100
3.0
f = 200 MHz
Tj = 25°C
CD – Diode Capacitance ( pF )
rf – Differential Forward Resistance (W )
Characteristics (Tj = 25_C unless otherwise specified)
10
BA 283
1
BA 282
0.1
f = 100 MHz
Tj = 25°C
2.5
2.0
BA 282
1.5
1.0
BA 283
0.5
0
0.1
94 9072
1
10
100
IF – Forward Current ( mA )
0.1
Figure 1. Differential Forward Resistance vs.
Forward Current
1
10
100
VR – Reverse Voltage ( V )
94 9073
Figure 2. Diode Capacitance vs. Reverse Voltage
Dimensions in mm
Cathode Identification
∅ 0.55 max.
technical drawings
according to DIN
specifications
94 9366
∅ 1.7 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
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26 min.
3.9 max.
26 min.
Document Number 85526
Rev. 2, 01-Apr-99
BA282.BA283
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85526
Rev. 2, 01-Apr-99
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