BA479G.BA479S Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 30 50 125 –55...+125 Unit V mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 350 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Differential forward resistance Reverse impedance Test Conditions IF=20mA VR=30 V f=100MHz, VR=0 f=100MHz, IF=1.5mA Minority carrier lifetime IF=10mA, IR=10mA Document Number 85527 Rev. 2, 01-Apr-99 f=100MHz, VR=0 Type BA479G BA479S Symbol VF IR CD rf Min zr zr 5 9 t Typ 4 Max 1 50 0.5 50 Unit V nA pF W kW kW ms www.vishay.de • FaxBack +1-408-970-5600 1 (3) BA479G.BA479S Vishay Telefunken a – Typical Cross Modulation Distortion ( dB ) Characteristics (Tj = 25_C unless otherwise specified) IF – Forward Current ( mA ) 100 10 Tamb= 25°C 1 Scattering Limit 0.1 0.01 0 0.4 0.8 1.2 1.6 V0 = 40 dB mV f1 = 100 MHz unmodulated –20 –40 –60 –80 0 95 9733 Figure 1. Forward Current vs. Forward Voltage P–Circuit with 10 dB Attenuation 0 2.0 VF – Forward Voltage ( V ) 95 9735 20 20 40 60 80 f2, modulated with 200 kHz, m=100% (MHz) Figure 3. Typ. Cross Modulation Distortion vs. Frequency f2 rf – Differential Forward Resistance (W ) 10000 1000 100 f >20 MHz Tj = 25°C 10 1 0.001 95 9734 0.01 0.1 1 10 IF – Forward Current ( mA ) Figure 2. Differential Forward Resistance vs. Forward Current Dimensions in mm Cathode Identification ∅ 0.55 max. technical drawings according to DIN specifications 94 9366 ∅ 1.7 max. Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g www.vishay.de • FaxBack +1-408-970-5600 2 (3) 26 min. 3.9 max. 26 min. Document Number 85527 Rev. 2, 01-Apr-99 BA479G.BA479S Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85527 Rev. 2, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 3 (3)