JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03Z Plastic-Encapsulate Diodes FBAP50-05W pin Diodes WBFBP-03Z (2×2×0.5) unit: mm DESCRIPTION Silicon planar 3 1 FEATURES z Two elements in common cathode configuration in a small-sized package z Low diode capacitance z Low diode forward resistance.. 2 APPLICATION General RF applications. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: W4 3 W4 1 2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit Continuous reverse voltage VR 50 V Continuous Forward Current IF 50 mA Power Dissipation (TA=90℃) Pd 150 mW Rthj-s 250 K/W Tj -65~+150 ℃ TSTG -65~+150 ℃ thermal resistance from junction to soldering point Junction temperature Storage temperature range Electrical Characteristics Parameter @TA=25℃ Symbol Min. Continuous reverse voltage VR 50 Forward voltage VF Reverse current Diode capacitance Diode forward resistance Typ. Max. Unit Conditions V IR=10µA 1.1 V IF=50mA IR 100 nA VR=50V Cd1 1.1 pF VR=0V,f=1MHz Cd2 0.6 pF VR=1V,f=1MHz Cd3 0.5 pF VR=5V,f=1MHz rD 40 Ω IF=0.5mA , f=100MHz rD 25 Ω IF=1mA , f=100MHz rD 5 Ω IF=10mA , f=100MHz When switched from IF=10mA charge carrier life time τL 1.05 μS to IR=6mA; RL=100;measured at IR=3mA series inductance Typical Characteristics LS 1.6 nH IF=100mA; f=100MHz FBAP50-05W Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 1.100 REF. 0.600 REF. 1.300 TYP. 0.500 REF. 0.400 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.043 REF. 0.024 REF. 0.052 TYP. 0.020 REF. 0.016 REF. 0.020 REF.