BAS85T-01I SILICON SCHOTTKY BARRIER DIODE Features · · · For general applications Low turn-on voltage PN junction guard ring A Min B C Max A 3.4 3.6 B 1.40 1.50 C 0.20 0.40 All dimensions in mm Mechanical Data · · Glass case Weight: 0.05g (approx) Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Continuous reverse voltage VR 30 V Forward continuous current* IF 200 mA IFM 300 mA Peak forward current * Surge forward current* @ tp = 1s IFSM 600 mA Power dissipation* @ TA = 65°C Ptot 250 mW Tj 125 °C TA -65 to +125 °C TSTG -65 to +150 °C Junction temperature Operating temperature range Storage temperature range Electrical Characteristics @ Tj = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit V(BR)R 30 — — V Reverse breakdown voltage 10 µA pulses * Valid provided that electrodes are kept at ambient temperature. DIODES INC 3050 East Hillcrest Drive, Westlake Village, CA 91362-3154 TEL: (805) 446-4800 FAX: (805) 446-4850 Document Number: 11004 Revision A- 5 Page 1 of 1 FAX-BACK: (805) 446-4870 www.diodes.com