ONSEMI BCW33LT3G

BCW33LT1G
General Purpose Transistor
NPN Silicon
Features
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• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
32
Vdc
Collector − Base Voltage
VCBO
32
Vdc
Emitter − Base Voltage
VEBO
5.0
Vdc
IC
100
mAdc
Symbol
Max
Unit
Collector Current − Continuous
1
BASE
2
EMITTER
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2),
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1
2
PD
RqJA
225
1.8
mW
mW/°C
556
°C/W
SOT−23
(TO−236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
PD
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
D3 M G
G
D3
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
BCW33LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
BCW33LT3G
SOT−23
(Pb−Free)
10,000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 4
1
Publication Order Number:
BCW33LT1/D
BCW33LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
32
−
Vdc
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CBO
32
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
−
Vdc
−
−
100
10
nAdc
mAdc
420
800
−
0.25
0.55
0.70
Cobo
−
4.0
pF
NF
−
10
dB
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 32 Vdc, IE = 0)
(VCB = 32 Vdc, IE = 0, TA = 100°C)
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
VCE(sat)
Base −Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 V
300 ns
DUTY CYCLE = 2%
275
+10.9 V
+3.0 V
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
+10.9 V
10 k
-0.5 V
<1.0 ns
275
10 k
0
CS < 4.0 pF*
-9.1 V
< 1.0 ns
1N916
*Total shunt capacitance of test jig and connectors
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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2
CS < 4.0 pF*
BCW33LT1G
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20
100
BANDWIDTH = 1.0 Hz
RS = 0
50
300 mA
10
In, NOISE CURRENT (pA)
e n, NOISE VOLTAGE (nV)
IC = 1.0 mA
100 mA
7.0
5.0
10 mA
3.0
20
300 mA
100 mA
10
5.0
2.0
1.0
30 mA
0.5
30 mA
BANDWIDTH = 1.0 Hz
RS ≈ ∞
IC = 1.0 mA
10 mA
0.2
2.0
0.1
10
20
50
100 200
500 1k
f, FREQUENCY (Hz)
2k
5k
10
10k
20
50
Figure 3. Noise Voltage
100 200
500 1k
f, FREQUENCY (Hz)
2k
5k
10k
Figure 4. Noise Current
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
BANDWIDTH = 1.0 Hz
200k
100k
50k
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
500k
20k
10k
5k
2.0 dB
2k
1k
500
3.0 dB 4.0 dB
6.0 dB
10 dB
200
100
50
1M
500k
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
1.0 dB
5k
2.0 dB
2k
1k
500
5.0 dB
200
100
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700
1k
8.0 dB
10
20
Figure 5. Narrow Band, 100 Hz
500k
RS , SOURCE RESISTANCE (OHMS)
3.0 dB
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700
1k
Figure 6. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is defined as:
20k
NF + 20 log10
10k
5k
1.0 dB
2k
1k
500
3.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
500 700
Ǔ
en2 ) 4KTRS ) In 2RS2 1ń2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10−23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
2.0 dB
200
100
50
ǒ
1k
IC, COLLECTOR CURRENT (mA)
Figure 7. Wideband
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3
BCW33LT1G
100
1.0
BCW33LT1
TJ = 25°C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL STATIC CHARACTERISTICS
100 mA
0.4
0.2
TA = 25°C
PULSE WIDTH = 300 ms
80 DUTY CYCLE ≤ 2.0%
300 mA
60
200 mA
40
100 mA
20
5.0 10
0
20
5.0
10
15
20
25
30
35
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Collector Saturation Region
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.2
1.0
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
50
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
25°C to 125°C
*qVC for VCE(sat)
0
- 55°C to 25°C
-0.8
25°C to 125°C
-1.6
qVB for VBE
-2.4
0.1
100
Figure 10. “On” Voltages
50
0.5
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
100
Figure 11. Temperature Coefficients
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
100
70
50
700
500
ts
300
200
t, TIME (ns)
t, TIME (ns)
0.2
- 55°C to 25°C
1000
300
200
tr
30
20
td @ VBE(off) = 0.5 Vdc
10
7.0
5.0
3.0
1.0
40
Figure 9. Collector Characteristics
1.4
0.1
400 mA
0
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
0.8
IB = 500 mA
100
70
50
tf
30
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
20
2.0
20 30
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
50 70
10
1.0
100
Figure 12. Turn−On Time
2.0
3.0
20 30
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 13. Turn−Off Time
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4
50
70 100
BCW33LT1G
500
10
TJ = 25°C
f = 100 MHz
TJ = 25°C
f = 1.0 MHz
7.0
300
200
C, CAPACITANCE (pF)
VCE = 20 V
5.0 V
100
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
TYPICAL DYNAMIC CHARACTERISTICS
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Current−Gain — Bandwidth Product
Figure 15. Capacitance
1.0
0.7
0.5
10
20
50
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19A
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
Figure 16. Thermal Response
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
104
IC, COLLECTOR CURRENT (nA)
VCC = 30 Vdc
A train of periodical power pulses can be represented by the model
as shown in Figure 16A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 16 was calculated for various duty cycles.
To find ZqJA(t), multiply the value obtained from Figure 16 by the
steady state value RqJA.
103
102
ICEO
101
ICBO
AND
100
ICEX @ VBE(off) = 3.0 Vdc
10-1
10-2
-4
0
-2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
Example:
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN−569.
Figure 16A.
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BCW33LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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BCW33LT1/D