MMBT8099LT1 Preferred Device Amplifier Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 500 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C Collector Current − Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C 3 1 PD RqJA 2 SOT−23 (TO−236) CASE 318 STYLE 6 PD Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 X 0.75 X 0.062 in. 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. MARKING DIAGRAM KB M G G 1 KB = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBT8099LT1 SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel MMBT8099LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 1 1 Publication Order Number: MMBT8099LT1/D MMBT8099LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 80 − 80 − 6.0 − − 0.1 − − 0.1 − − − 0.1 − 100 100 75 300 − − − − 0.4 0.3 − 0.6 − 0.8 150 − − 6.0 − 25 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICES Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) VBE(on) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 MHz pF pF MMBT8099LT1 TURN−ON TIME VCC −1.0 V 5.0 ms TURN−OFF TIME 100 +40 V 100 RL RL OUTPUT +10 V Vin 0 VCC +VBB +40 V tr = 3.0 ns OUTPUT RB Vin * CS t 6.0 pF 5.0 mF RB * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 300 40 200 20 C, CAPACITANCE (pF) 5.0 V VCE = 1.0 V 100 70 Cibo 10 8.0 6.0 50 30 4.0 1.0 1.0 k 700 500 2.0 3.0 5.0 7.0 10 20 30 50 70 0.2 0.5 1.0 2.0 10 5.0 20 Figure 2. Current−Gain − Bandwidth Product Figure 3. Capacitance tf 30 20 tr td @ VBE(off) = 0.5 V 20 30 50 70 100 50 100 1.0 k 700 500 ts 100 70 50 10 0.1 VR, REVERSE VOLTAGE (VOLTS) 200 10 2.0 100 Cobo IC, COLLECTOR CURRENT (mA) VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) TJ = 25°C TJ = 25°C I C , COLLECTOR CURRENT (mA) f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz Figure 1. Switching Time Test Circuits 300 200 100 70 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 30 20 DUTY CYCLE ≤ 10% 200 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 4. Switching Times Figure 5. Active−Region Safe Operating Area http://onsemi.com 3 MMBT8099LT1 400 1.0 0.8 25°C 200 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN TJ = 125°C −55°C 100 VCE = 5.0 V 80 TJ = 25°C VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 60 VCE(sat) @ IC/IB = 10 1.0 2.0 3.0 5.0 20 30 10 50 100 200 IC = 50 mA IC = 100 mA IC = 200 mA IC = 10 mA 1.0 0.7 0.5 0.1 0.07 0.05 10 20 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100 200 −1.0 −1.4 −1.8 RqVB FOR VBE −55°C TO 125°C −2.2 −2.6 −3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region Figure 9. Base−Emitter Temperature Coefficient D = 0.5 0.2 0.3 0.2 5.0 Figure 7. “ON” Voltages 0.8 0.05 2.0 Figure 6. DC Current Gain IC = 20 mA 0 0.02 1.0 IC, COLLECTOR CURRENT (mA) 1.2 0.4 0.5 IC, COLLECTOR CURRENT (mA) TJ = 25°C 1.6 0 0.2 R qVB , TEMPERATURE COEFFICIENT (mV/° C) 0.2 0.3 0.5 2.0 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 40 0.1 0.05 0.02 SINGLE PULSE ZqJC(t) = r(t) • RqJC TJ(pk) − TC = P(pk) ZqJC(t) ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) P(pk) 0.01 t1 SINGLE PULSE 0.03 t2 0.02 DUTY CYCLE, D = t1/t2 0.01 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms) Figure 10. Thermal Response http://onsemi.com 4 2.0 k 5.0 k 10 k 20 k 50 k 100 k MMBT8099LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 5 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMBT8099LT1/D