ONSEMI MMBT3906LT3G

MMBT3906LT1G
General Purpose Transistor
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−40
Vdc
Collector −Base Voltage
VCBO
−40
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−200
mAdc
ICM
−800
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous
Collector Current − Peak (Note 3)
1
BASE
2
EMITTER
3
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
2A M G
G
1
2A = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MMBT3906LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBT3906LT3G
SOT−23 10,000 / Tape & Reel
(Pb−Free)
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 9
1
Publication Order Number:
MMBT3906LT1/D
MMBT3906LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−40
−
−40
−
−5.0
−
−
−50
−
−50
60
80
100
60
30
−
−
300
−
−
−
−
−0.25
−0.4
−0.65
−
−0.85
−0.95
250
−
−
4.5
−
10
2.0
12
0.1
10
100
400
3.0
60
−
4.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
Base Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
IBL
Collector Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
ICEX
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 4)
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
HFE
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Input Impedance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hie
Voltage Feedback Ratio
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hre
Small −Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hoe
Noise Figure
(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
NF
MHz
pF
pF
kW
X 10− 4
−
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = −3.0 Vdc, VBE = 0.5 Vdc,
IC = −10 mAdc, IB1 = −1.0 mAdc)
td
−
35
tr
−
35
(VCC = −3.0 Vdc, IC = −10 mAdc,
IB1 = IB2 = −1.0 mAdc)
ts
−
225
tf
−
75
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
ns
ns
MMBT3906LT1G
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
+0.5 V
10 k
0
CS < 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
CS < 4 pF*
1N916
10 < t1 < 500 ms
10.9 V
t1
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
5000
7.0
3000
2000
Cobo
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
TJ = 25°C
TJ = 125°C
Cibo
3.0
2.0
VCC = 40 V
IC/IB = 10
1000
700
500
300
200
QT
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
100
70
50
20 30 40
1.0
2.0 3.0
Figure 3. Capacitance
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
200
Figure 4. Charge Data
500
500
IC/IB = 10
300
200
VCC = 40 V
IB1 = IB2
300
200
tr @ VCC = 3.0 V
15 V
30
20
t f , FALL TIME (ns)
TIME (ns)
IC/IB = 20
100
70
50
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
10
2.0 V
7
5
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
Figure 6. Fall Time
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3
200
MMBT3906LT1G
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5.0
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
IC = 0.5 mA
8
6
4
IC = 50 mA
2
IC = 100 mA
0
100
0.1
0.2
0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 7.
40
100
Figure 8.
h PARAMETERS
(VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
h fe , DC CURRENT GAIN
300
200
100
70
50
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5
5.0 7.0 10
0.1
0.2
Figure 9. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
h ie , INPUT IMPEDANCE (k OHMS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 10. Output Admittance
20
0.3
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
5.0 7.0 10
0.1
Figure 11. Input Impedance
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 12. Voltage Feedback Ratio
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4
MMBT3906LT1G
TYPICAL STATIC CHARACTERISTICS
1000
VCE = 1 V
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
100
10
1.0
10
100
1000
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
Figure 14. Collector Saturation Region
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5
2.0
3.0
5.0
7.0
10
MMBT3906LT1G
0.45
IC/IB = 10
150°C
0.35
25°C
−55°C
0.30
0.25
0.20
0.15
0.10
0.05
0.001
0.01
0.1
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
1
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
1.4
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VCE = 1 V
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
1.2
0.0001
0.001
0.01
0.1
VCE = 2 V
TA = 25°C
100
10
1
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (mA)
Figure 17. Base Emitter Voltage vs. Collector
Current
Figure 18. Current Gain Bandwidth vs.
Collector Current
1
1.0
0.5
1000
qVC FOR VCE(sat)
+25°C TO +125°C
10 ms
Thermal Limit
0.1
0
1 ms
1s
100 ms
-55°C TO +25°C
IC (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
IC/IB = 10
0.40
0
q V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.4
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.50
-0.5
+25°C TO +125°C
0.01
-1.0
-55°C TO +25°C
qVB FOR VBE(sat)
-1.5
-2.0
0.001
0
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
180 200
Single Pulse Test
@ TA = 25°C
0.01
0.1
1
10
VCE (Vdc)
Figure 19. Temperature Coefficients
Figure 20. Safe Operating Area
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6
100
MMBT3906LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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Sales Representative
MMBT3906LT1/D