ROHM BD45E292

Datasheet
Voltage Detector IC Series
Counter Timer Built-in
CMOS Voltage Detector IC
BD45Exxxx-M series BD46Exxxx-M series
●General Description
ROHM’s BD45Exxxx-M and BD46Exxxx-M series are
highly accurate, low current consumption Voltage
Detector IC series. Because the counter timer delay
circuit is built into those series, an external capacitor for
the delay time setting is unnecessary. The lineup was
established with two output types (Nch open drain and
CMOS output) and detection voltages range from 2.3V
to 4.8V in increments of 0.1V, so that the series may be
selected according to application.
●Features
Counter Timer Built-in
No delay time setting capacitor required
Ultra-low current consumption
Two output types (Nch open drain and CMOS output)
Package SSOP5 is similar to SOT-23-5 (JEDEC)
(AEC-Q100 Qualified)
●Key Specifications
Detection voltage:
2.3V to 4.8V (Typ.)
0.1V steps
High accuracy detection voltage:
±1.0%
Ultra-low current consumption:
0.85µA (Typ.)
Operating temperature range:
-40°C to +105°C
Three internal, fixed delay time:
50ms
100ms
200ms
●Package
SSOP5
2.90mm x 2.80mm x 1.25mm
●Applications
Circuits using microcontrollers or logic circuits that require
a reset.
●Typical Application Circuit
VDD1
VDD2
VDD1
RL
BD45Exxxx-M
RST
Micro
controller
BD46Exxxx-M
CL
RST
Micro
controller
CL
(Noise-filtering
Capacitor)
GND
(Noise-filtering
Capacitor)
GND
(Open Drain Output Type)
BD45Exxxx-M series
●Connection Diagram
(CMOS Output Type)
BD46Exxxx-M series
●Pin Descriptions
SSOP5
VDD
VOUT
TOP VIEW
Lot. No
Marking
ER
SUB GND
PIN No.
Symbol
Function
1
ER
2
SUB
Substrate *
3
GND
GND
4
VOUT
Reset Output
5
VDD
Power Supply Voltage
Manual Reset
*Connect the substrate to GND.
○Product structure:Silicon monolithic integrated circuit ○This product is not designed for protection against radioactive rays
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23.May.2013 Rev.003
TSZ22111・14・001
Datasheet
BD45Exxxx-M series BD46Exxxx-M series
●Ordering Information
B
D
x
Part
Number
x
E
x
Output Type
45 : Open Drain
46 : CMOS
x
x
Reset Voltage Value
23 : 2.3V
0.1V step
48 : 4.8V
x
-
Counter Timer
Package
Delay Time Settings G : SSOP5
5 : 50ms
1 : 100ms
2 : 200ms
M
T
Automotive Accessories
R
Packaging and
forming specification
TR : Embossed tape
and reel
SSOP5
5
4
1
2
3
Tape
Embossed carrier tape
Quantity
3000pcs
TR
Direction
of feed
0.2Min.
+0.2
1.6 −0.1
2.8±0.2
<Tape and Reel information>
+6°
4° −4°
2.9±0.2
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
1pin
+0.05
0.13 −0.03
1.25Max.
)
0.05±0.05
1.1±0.05
S
+0.05
0.42 −0.04
0.95
0.1
S
Direction of feed
Reel
(Unit : mm)
∗ Order quantity needs to be multiple of the minimum quantity.
●Lineup
Table 1. Open Drain Output Type
Counter Timer Delay Time Settings
50ms
Detection
Voltage Marking
4.8V
4.7V
4.6V
4.5V
4.4V
4.3V
4.2V
4.1V
4.0V
3.9V
3.8V
3.7V
3.6V
3.5V
3.4V
3.3V
3.2V
3.1V
3.0V
2.9V
2.8V
2.7V
2.6V
2.5V
2.4V
2.3V
a2
a1
Yy
Yr
Yp
Yn
Ym
Yk
Yh
Yg
Yf
Ye
Yd
Yc
Yb
Ya
Uy
Ur
Up
Un
Um
Uk
Uh
Ug
Uf
Ue
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
Part
Number
BD45E485
BD45E475
BD45E465
BD45E455
BD45E445
BD45E435
BD45E425
BD45E415
BD45E405
BD45E395
BD45E385
BD45E375
BD45E365
BD45E355
BD45E345
BD45E335
BD45E325
BD45E315
BD45E305
BD45E295
BD45E285
BD45E275
BD45E265
BD45E255
BD45E245
BD45E235
100ms
200ms
Marking
Part
Number
Marking
Part
Number
d1
c9
c8
c7
c6
c5
c4
c3
c2
c1
b9
b8
b7
b6
b5
b4
b3
b2
b1
a9
a8
a7
a6
a5
a4
a3
BD45E481
BD45E471
BD45E461
BD45E451
BD45E441
BD45E431
BD45E421
BD45E411
BD45E401
BD45E391
BD45E381
BD45E371
BD45E361
BD45E351
BD45E341
BD45E331
BD45E321
BD45E311
BD45E301
BD45E291
BD45E281
BD45E271
BD45E261
BD45E251
BD45E241
BD45E231
f9
f8
f7
f6
f5
f4
f3
f2
f1
e9
e8
e7
e6
e5
e4
e3
e2
e1
d9
d8
d7
d6
d5
d4
d3
d2
BD45E482
BD45E472
BD45E462
BD45E452
BD45E442
BD45E432
BD45E422
BD45E412
BD45E402
BD45E392
BD45E382
BD45E372
BD45E362
BD45E352
BD45E342
BD45E332
BD45E322
BD45E312
BD45E302
BD45E292
BD45E282
BD45E272
BD45E262
BD45E252
BD45E242
BD45E232
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Datasheet
BD45Exxxx-M series BD46Exxxx-M series
●Lineup - continued
Table 2. CMOS Output Type
Counter Timer Delay Time Settings
50ms
Detection
Voltage Marking
4.8V
4.7V
4.6V
4.5V
4.4V
4.3V
4.2V
4.1V
4.0V
3.9V
3.8V
3.7V
3.6V
3.5V
3.4V
3.3V
3.2V
3.1V
3.0V
2.9V
2.8V
2.7V
2.6V
2.5V
2.4V
2.3V
k8
k7
k6
k5
k4
k3
k2
k1
h9
h8
h7
h6
h5
h4
h3
h2
h1
g9
g8
g7
g6
g5
g4
g3
g2
g1
100ms
200ms
Part
Number
Marking
Part
Number
Marking
Part
Number
BD46E485
BD46E475
BD46E465
BD46E455
BD46E445
BD46E435
BD46E425
BD46E415
BD46E405
BD46E395
BD46E385
BD46E375
BD46E365
BD46E355
BD46E345
BD46E335
BD46E325
BD46E315
BD46E305
BD46E295
BD46E285
BD46E275
BD46E265
BD46E255
BD46E245
BD46E235
p7
p6
p5
p4
p3
p2
p1
n9
n8
n7
n6
n5
n4
n3
n2
n1
m9
m8
m7
m6
m5
m4
m3
m2
m1
k9
BD46E481
BD46E471
BD46E461
BD46E451
BD46E441
BD46E431
BD46E421
BD46E411
BD46E401
BD46E391
BD46E381
BD46E371
BD46E361
BD46E351
BD46E341
BD46E331
BD46E321
BD46E311
BD46E301
BD46E291
BD46E281
BD46E271
BD46E261
BD46E251
BD46E241
BD46E231
1f
1e
1d
1c
1b
1a
y9
y8
y7
y6
y5
y4
y3
y2
y1
r9
r8
r7
r6
r5
r4
r3
r2
r1
p9
p8
BD46E482
BD46E472
BD46E462
BD46E452
BD46E442
BD46E432
BD46E422
BD46E412
BD46E402
BD46E392
BD46E382
BD46E372
BD46E362
BD46E352
BD46E342
BD46E332
BD46E322
BD46E312
BD46E302
BD46E292
BD46E282
BD46E272
BD46E262
BD46E252
BD46E242
BD46E232
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
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TSZ02201-0R7R0G300110-1-2
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Datasheet
BD45Exxxx-M series BD46Exxxx-M series
Absolute maximum ratings
Parameter
Power Supply Voltage
Nch Open Drain Output
Output Voltage
CMOS Output
Output Current
ER pin Voltage
Power Dissipation
*1,*2
Operating Temperature
Ambient Storage Temperature
Symbol
VDD-GND
VOUT
IO
VCT
Pd
Topr
Tstg
Limits
-0.3 to +10
GND-0.3 to +10
GND-0.3 to VDD+0.3
60
GND-0.3 to VDD+0.3
540
-40 to +105
-55 to +125
Unit
V
V
mA
V
mW
°C
°C
*1 Reduced by 5.4mW/°C when used over 25°C.
*2 When mounted on ROHM standard circuit board (70mm×70mm×1.6mm, glass epoxy board).
●Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C)
Parameter
Symbol
Condition
VDD=HL, RL=470kΩ
Ta=+25°C
VDET=2.5V
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
VDET=3.0V
Ta=-40°C to 85°C
Ta=85°C to 105°C
Detection Voltage
VDET
Ta=+25°C
VDET=3.3V
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
VDET=4.2V
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
VDET=4.8V
Ta=-40°C to 85°C
Ta=85°C to 105°C
Detection Voltage
Temperature coefficient
VDET/
∆T
-40°C to +105°C
Hysteresis Voltage
∆VDET
VDD=LHL, RL=470kΩ
‘High’ Output
Delay time
tPLH
CL=100pF,
RL=100kΩ
*1,*2,*3
Min.
VDET(T)
*1
×0.99
2.475
2.418
2.404
2.970
2.901
2.885
3.267
3.191
3.173
4.158
4.061
4.039
4.752
4.641
4.616
BD45EXX5, BD46EXX5
BD45EXX1, BD46EXX1
BD45EXX2, BD46EXX2
VDD=VDET-0.2V, VER=0V VDET=2.3V to 3.1V
*1
VDD=VDET-0.2V, VER=0V VDET=2.3V to 3.1V
Circuit Current
when ON
IDD1
VDD=VDET-0.2V, VER=0V VDET=3.2V to 4.2V
*1
VDD=VDET-0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET-0.2V, VER=0V VDET=4.3V to 4.8V
*1
VDD=VDET-0.2V, VER=0V VDET=4.3V to 4.8V
VDD=VDET+0.2V, VER=0V VDET=2.3V to 3.1V
*1
VDD=VDET+0.2V, VER=0V VDET=2.3V to 3.1V
Circuit Current
when OFF
IDD2
VDD=VDET+0.2V, VER=0V VDET=3.2V to 4.2V
*1
VDD=VDET+0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET+0.2V, VER=0V VDET=4.3V to 4.8V
VDD=VDET+0.2V, VER=0V VDET=4.3V to 4.8V
*1
Limit
Typ.
2.5
3.0
3.3
4.2
4.8
-
Max.
VDET(T)
×1.01
2.525
2.584
2.597
3.030
3.100
3.117
3.333
3.410
3.428
4.242
4.341
4.364
4.848
4.961
4.987
-
±100
±360
VDET(T)
×0.03
45
90
180
-
VDET(T)
×0.05
50
100
200
0.70
0.70
0.75
0.75
0.80
0.80
0.75
0.75
0.80
0.80
0.85
0.85
VDET(T)
×0.08
55
110
220
2.10
2.85
2.25
3.00
2.40
3.15
2.25
4.28
2.40
4.50
2.55
4.73
VDET(T)
Unit
V
ppm/°C
V
ms
µA
µA
VDET(T):Standard Detection Voltage (2.3V to 4.8V, 0.1V step)
RL :Pull-up resistor to be connected between VOUT and power supply.
CL :Capacitor to be connected between VOUT and GND.
*1 Guarantee is Ta=25°C.
*2 tPLH:VDD=(VDET(T)-0.5V)(VDET(T)+0.5V)
*3 tPLH:VDD=Please set up the rise up time between VDD=0VDET more than 100µs.
Attention: Please connect ‘ER’ to the GND when not in use.
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TSZ02201-0R7R0G300110-1-2
23.May.2013 Rev.003
Datasheet
BD45Exxxx-M series BD46Exxxx-M series
●Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C) – continued
Parameter
Symbol
Operating Voltage Range
VOPL
‘High’ Output Voltage (Pch)
VOH
‘Low’Output Voltage (Nch)
VOL
Leak Current when OFF
ER Pin ‘H’ Voltage
ER Pin ‘L’ Voltage
ER Pin Input Current
Ileak
VEH
VEL
IEL
Condition
Min.
VOL≤0.4V, RL=470kΩ, Ta=25 to 105°C
0.95
1.20
VOL≤0.4V, RL=470kΩ, Ta=-40 to 25°C
VDD-0.5
VDD=4.8V, ISOURCE= 1.0 mA, VDET(2.3V to 4.2V)
VDD-0.5
VDD=6.0V, ISOURCE= 1.2 mA, VDET(4.3V to 4.8V)
VDD=1.2V, ISINK = 0.45 mA
VDD=2.4V, ISINK = 1.3 mA, VDET(2.7V to 4.8V)
VDD=VDS=10V
*1
2.0
*1
*1
-
Limit
Typ.
1
Max.
0.3
0.3
0.1
0.8
10
Unit
V
V
V
µA
V
V
µA
VDET(T):Standard Detection Voltage (2.3V to 4.8V, 0.1V step)
RL :Pull-up resistor to be connected between VOUT and power supply.
CL :Capacitor to be connected between VOUT and GND.
*1 Guarantee is Ta=25°C.
Attention: Please connect ‘ER’ to the GND when not in use.
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TSZ02201-0R7R0G300110-1-2
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Datasheet
BD45Exxxx-M series BD46Exxxx-M series
●Block Diagrams
VDD
Oscillation
VOUT
Circuit Counter
Timer
Vref
GND
ER
Fig.1 BD45Exxxx-M Series
VDD
Oscillation
Circuit Counter
Timer
Vref
GND
VOUT
ER
Fig.2 BD46Exxxx-M Series
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TSZ02201-0R7R0G300110-1-2
23.May.2013 Rev.003
Datasheet
BD45Exxxx-M series BD46Exxxx-M series
●Typical Performance Curves
"LOW" OUTPUT CURRENT : IOL [mA]
CIRCUIT CURRENT : IDD [µA]
2.0
【BD45281G】
【BD45E281-M】
【BD46E281-M】
1.5
1.0
0.5
0.0
1
2
3
4
5
6
7
8
9 10
【BD45E281-M】
【 BD45281G 】
【BD46E281-M】
15
VD D =2.4V
10
5
VD D =1.2V
0
0.0
0.5
1.0
1.5
2.0
2.5
VDD SUPPLY VOLTAGE :VDD [V]
DRAIN-SOURCE VOLTAGE : VD S[V]
Fig.3 Circuit Current
Fig.4 “Low” Output Current
7
20
【 BD46281G】
【BD46E281-M】
15
VD D =6.0V
10
VD D =4.8V
OUTPUT VOLTAGE : VOUT [V]
"HIGH" OUTPUT CURRENT : IOH [mA]
0
20
5
0
【BD45E281-M】
【BD45421G】
6
【BD46E281-M】
5
4
3
Ta=25℃
2
1
Ta=25℃
0
0
1
2
3
4
5
6
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
DRAIN-SOURCE VOLTAGE : VD S[V]
VD D SUPPLY VOLTAGE :VD D [V]
Fig.5 “High” Output Current
Fig.6 I/O Characteristics
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TSZ02201-0R7R0G300110-1-2
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Datasheet
BD45Exxxx-M series BD46Exxxx-M series
●Typical Performance Curves – continued
20
【 BD45421G 】
【BD45E421-M】
【BD45E281-M】
【BD46281G】
ER BIAS CURRENT : IER[µA]
OUTPUT VOLTAGE: VOUT [V]
20
【BD46E281-M】
15
10
5
【BD46E421-M】
15
10
5
0
0
0
1
2
3
4
5
6
7
8
0
9 10
1
2
Fig.7 ER Terminal Threshold Voltage
CIRCUIT CURRENT WHEN ON : IDD1 [µA]
DETECTION VOLTAGE: VDET[V]
【BD45E421-M】【BD46E421-M】
【 BD 45421G 】
Low to hig h(V D ET + ∆V D ET )
4.6
4.2
3.8
H ig h to low(V D ET )
3.4
3.0 ~
- 40
0
40
6
7
8
9
10
1.6
1.4
【 BD 45421G 】
【BD45E421-M】
1.2
【BD46E421-M】
1.0
0.8
0.6
0.4
0.2
0.0
- 40
80
- 20
0
20
40
60
80
100
T EM PER AT U R E : T a[℃ ]
T EM PER AT U R E : T a[℃ ]
Fig.10 Circuit Current when ON
(VDET-0.2V)
Fig.9 Detection Voltage
Release Voltage
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TSZ22111・15・001
5
Fig.8 ER Terminal Input Current
5.8
5.0
4
ER VOLTAGE : VER [V]
ER VOLTAGE : VER[V]
5.4
3
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TSZ02201-0R7R0G300110-1-2
23.May.2013 Rev.003
Datasheet
BD45Exxxx-M series BD46Exxxx-M series
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
1.5
MINIMUM OPERATING VOLTAGE: VOPL[V]
CIRCUIT CURRENT WHEN OFF : I DD2 [µA]
●Typical Performance Curves – continued
【BD45E421-M】
【BD45421G】
【BD46E421-M】
【BD45E421-M】
【BD46E421-M】
1.0
0.5
0.0
0
20
40
60
80
-40
100
0
20
40
60
80
100
TEMPERATURE : Ta[℃]
TEMPERATURE : Ta[℃]
Fig.11 Circuit Current when OFF
Fig.12 Operating Limit Voltage
50
250
【 BD 4528□ G 】
【BD45E282-M】【BD46E282-M】
200
DELAY
TIME:: ttPLH
PHL[µs]
"LOW"“LOW”
DELAY
TIME
[µsec]
: tPLH
“HIGH”
DELAY TIME
: tPLH
[ms][msec]
"HIGH"
DELAY
TIME
-20
BD 45282G
150
【BD45E281-M】【BD46E281-M】
BD 45281G
100
50
BD 45285G
【BD45E285-M】【BD46E285-M】
BD 45281G tPH L 】
【
【BD45E281-M】
40
【BD46E281-M】
30
20
10
0
0
-60 -40 -20
0
20
40
60
-60 -40 -20
80 100 120
0
20
40
60
80 100 120
TEM PER AT U R E : T a[℃ ]
TEM PER ATU R E : Ta[℃ ]
Fig.13 Output Delay Time
“Low””High”
Fig.14 Output Delay Time
“High””Low”
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TSZ02201-0R7R0G300110-1-2
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Datasheet
BD45Exxxx-M series BD46Exxxx-M series
●Application Information
Explanation of Operation
For both the open drain type (Fig.15) and the CMOS output type (Fig.16), the detection and release voltages are used as
threshold voltages. When the voltage applied to the VDD pins reaches the applicable threshold voltage, the VOUT terminal
voltage switches from either “High” to “Low” or from “Low” to “High”. Because the BD45Exxxx-M series uses an open drain
output type, it is necessary to connect a pull-up resistor to VDD or another power supply if needed [The output “High”
voltage (VOUT) in this case becomes VDD or the voltage of the other power supply].
VDD
VDD
VDD
R1
R1
Q2
Vref
Vref
Reset
VOUT
Oscillation
R2
Oscillation
Circuit Counter
Timer
R2
Reset
Circuit Counter
Timer
Q1
VOUT
Q1
R3
R3
GND
GND
ER
ER
Fig.15 (BD45Exxxx-M Type Internal Block Diagram)
Fig.16 (BD46Exxxx-M Type Internal Block Diagram)
Reference Data
Examples of Leading (tPLH) and Falling (tPHL) Output
Part Number
BD45E275G-M
BD46E275G-M
tPLH[ms]
50
50
VDD=2.2V3.2V
tPHL[µs]
18
18
VDD=3.2V2.2V
*This data is for reference only.
The figures will vary with the application, so please confirm actual operating conditions before use.
Timing Waveform
Example: The following shows the relationship between the input voltages VDD, the output voltage VOUT and ER terminal when
the input power supply voltage VDD is made to sweep up and sweep down (the circuits are those in Fig. 15 and 16).
1
When the power supply is turned on, the output is unstable
from after over the operating limit voltage (VOPL) until tPHL.
Therefore it is possible that the reset signal is not outputted when
VDD
⑦
the rise time of VDD is faster than tPHL.
VOPL
2 When V
0V
DD is greater than VOPL but less than the reset release
voltage
(V
DET + ∆VDET), the output voltages will switch to Low.
VOH
3 If V
tPLH
tPLH
DD exceeds the reset release voltage (VDET + ∆VDET), the
tPLH
VOUT
counter
timer start and VOUT switches from L to H.
tPHL
VOL
4 When more than the high level voltage is supplied ER terminal,
tPHL
VOUT comes to “L” after tPLH delay time. Therefore, a time when ER
VEH
terminal is “H” is necessary for 100µsec or more.
ER
5 When the ER terminal switches to Low, the counter timer starts
tPHL
to operate, a delay of tPLH occurs, and VOUT switches from “L” to
“H”.
① ②
③ ④⑤
⑥
6 If V
DD drops below the detection voltage (VDET) when the power
supply is powered down or when there is a power supply
Fig.17 Timing Waveform
fluctuation, VOUT switches to L (with a delay of tPHL).
7 The potential difference between the detection voltage and the
release voltage is known as the hysteresis width (∆VDET). The
system is designed such that the output does not toggle with
power supply fluctuations within this hysteresis width, thus,
preventing malfunctions due to noise.
Timing may change depending on application and use. Please verify and confirm using practical applications.
VDD
VDET+ΔVDET
VDET
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●Circuit Applications
1) Examples of a common power supply detection reset circuit.
VDD1
Application examples of BD45Exxxx-M series (Open
Drain output type) and BD46Exxxx-M series (CMOS
output type) are shown below.
VDD2
RL
BD45Exxxx-M
RST
Micro
controller
CASE1: Power supply of microcontroller (VDD2) differs
from the power supply of the reset detection (VDD1).
Use an open drain output Type (BD45xx series) device
with a load resistance RL as shown Fig.18.
CL
(Noise-filtering
Capacitor)
GND
CASE2: Power supply of the microcontroller (VDD1) is
same as the power supply of the reset detection (VDD1).
Use a CMOS output type (BD46Exxxx-M) device or an
open drain output type (BD45Exxxx-M) with a pull up
resistor between the output and VDD1.
Fig.18 Open Drain Output Type
VDD1
BD46Exxxx-M
RST
Micro
controller
When a capacitance CL for noise filtering is connected to
the VOUT pin (the reset signal input terminal of the
microcontroller), please take into account the waveform
of the rise and fall of the output voltage (VOUT).
CL
(Noise-filtering
Capacitor)
GND
Fig.19 CMOS Output Type
2)
The following is an example of a circuit application in which an OR connection between two types of detection voltage
resets the microcontroller.
VDD1
VDD3
VDD2
RL
BD45Exxxx-M
BD45Exxxx-M
RST Micro
controller
GND
Fig. 20
To reset the microcontroller when many independent power supplies are used in the system, OR connect an open drain
output type (BD45Exxxx-M series) to the microcontroller’s input with pull-up resistor to the supply voltage of the
microcontroller (VDD3) as shown in Fig. 20. By pulling-up to VDD3, output “High” voltage of micro-controller power supply is
possible.
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3) Examples of the power supply with resistor dividers.
In applications wherein the power supply voltage of an IC comes from a resistor divider circuit, an in-rush current will flow
into the circuit when the output level switches from “High” to “Low” or vice versa. In-rush current is a sudden surge of current
that flows from the power supply (VDD) to ground (GND) as the output logic changes its state. This current flow may cause
malfunction in the systems operation such as output oscillations, etc.
V1
R2
I1
VDD
BD45Exxxx-M
BD46Exxxx-M
R1
CIN
VOUT
CL
GND
Fig. 21
When an in-rush current (I1) flows into the circuit (Refer to Fig. 21) at the time when output switches from “Low” to “High”,
a voltage drop of I1×R2 (input resistor) will occur in the circuit causing the VDD supply voltage to decrease. When the VDD
voltage drops below the detection voltage, the output will switch from “High” to “Low”. While the output voltage is at “Low”
condition, in-rush current will stop flowing and the voltage drop will be reduced. As a result, the output voltage will switches
again from “Low” to “High” which causes an in-rush current and a voltage drop. This operation repeats and will result to
oscillation.
IDD
In-rush Current
0
VDD
VDET
Fig. 22 Current Consumption vs. Power Supply Voltage
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●Operational Notes
1) Absolute maximum ratings
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit
between pins or an open circuit between pins. Therefore, it is important to consider circuit protection measures, such
as adding a fuse, in case the IC is operated over the absolute maximum ratings.
2)
Ground Voltage
The voltage of the ground pin must be the lowest voltage of all pins of the IC at all operating conditions. Ensure that no
pins are at a voltage below the ground pin at any time, even during transient condition.
3)
Recommended operating conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
4)
Bypass Capacitor for Noise Rejection
To help reject noise, put a 1uF capacitor between VDD pin and GND and 1000pF capacitor between VOUT pin and GND.
Be careful when using extremely big capacitor as transient response will be affected.
5)
Short between pins and mounting errors
Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong
orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins.
6)
Operation under strong electromagnetic field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
7)
The VDD line impedance might cause oscillation because of the detection current.
8)
A VDD to GND capacitor (as close connection as possible) should be used in high VDD line impedance condition.
9)
Lower than the mininum input voltage puts
condition.
the VOUT in high impedance state, and it must be VDD in pull up (VDD)
10) This IC has extremely high impedance terminals. Small leak current due to the uncleanness of PCB surface might
cause unexpected operations. Application values in these conditions should be selected carefully. If the leakage of
about 1MΩ is assumed between the ER terminal and the GND terminal, 100kΩ connection between the ER terminal
and the VDD terminal would be recommended. If the leakage is assumed between the VOUT terminal and the GND
terminal, the pull-up resistor should be less than 1/10 of the assumed leak resistance.
11) External parameters
The recommended parameter range for RL is 50kΩ to 1MΩ. There are many factors (board layout, etc) that can affect
characteristics. Please verify and confirm using practical applications.
12) Power on reset operation
Please note that the power on reset output varies with the VDD rise time. Please verify the behavior in the actual
operation.
13) Testing on application boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
14) Rush current
When the power supply, is turned on because of in certain cases, momentary Rash-current flow into the IC at the logic
unsettled, the couple capacitance, GND pattern of width and leading line must be considered.
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●Revision History
Date
Revision
Changes
20.Nov.2012
001
18.Dec.2012
002
23.May.2013
003
New Release
Change the value of “Counter Timer Delay” from 5ms to 50ms in Table1 and Table2.
Change unit of Operating Limit Voltage graph from uA to V in Typical Performance
Curve.
Change limits for VDET at VDET=2.5V,3.0V,3.3V,4.2V,4.8V
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8.
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Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
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ROHM representative in advance.
For details, please refer to ROHM Mounting specification
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