BSI BH62UV4000TI55

Ultra Low Power/High Speed CMOS SRAM
512K X 8 bit
BH62UV4000
Green package materials are compliant to RoHS
n FEATURES
n DESCRIPTION
Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V
Ÿ Ultra low power consumption :
VCC = 3.6V
Operation current : 10mA (Max.)at 55ns
2mA (Max.) at 1MHz
Standby current : 2.0uA (Typ.) at 3.0V/25OC
VCC = 1.2V
Data retention current : 1.0uA at 25OC
Ÿ High speed access time :
-55
55ns (Max.) at VCC=1.65~3.6V
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE and OE options
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation, no clock, no refresh
Ÿ Data retention supply voltage as low as 1.0V
The BH62UV4000 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 524,288 by 8 bits and
operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical operating current of
1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at
1.65V/85OC.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BH62UV4000 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BH62UV4000 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 400mil TSOP-II, 600mil Plastic DIP,
8mmx13.4mm STSOP, 8mmx20mm TSOP and 36-ball BGA
package.
n POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
Icc STANDBY
OPERATING
TEMPERATURE
Icc Operating
(ICCSB1, Max)
VCC=3.6V
PKG TYPE
(ICC, Max)
VCC=1.8V
VCC=3.6V
1MHz
10MHz
VCC=1.8V
fMax.
1MHz
10MHz
fMax.
BH62UV4000DI
DICE
BH62UV4000EI
TSOP-II
BH62UV4000HI
BH62UV4000PI
BGA-36-0608
Industrial
-40OC to +85OC
10uA
10uA
2mA
6mA
10mA
1.5mA
5mA
8mA
PDIP-32
BH62UV4000SI
SOP-32
BH62UV4000STI
STSOP-32
BH62UV4000TI
TSOP-32
n BLOCK DIAGRAM
n PIN CONFIGURATIONS
•
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
BH62UV4000STI
BH62UV4000TI
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
Address
1024
10
Input
Row
Buffer
Decoder
Memory Array
1024 x 4096
4096
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
•
1
2
3
4
5
6
7
BH62UV4000EI
8 BH62UV4000PI
9 BH62UV4000SI
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
1
2
3
4
5
A
A0
B
DQ4
A1
NC
A3
A6
A8
A2
WE
A4
A7
DQ0
C
DQ5
NC
A5
D
VSS
VCC
E
VCC
VSS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
6
DQ1
8
8
Data
Input
Buffer
Data
Output
Buffer
8
Column I/O
Write Driver
Sense Amp
8
512
Column Decoder
9
F
DQ6
G
DQ7
H
A9
A18
A17
OE
CE
A16
A15
DQ3
A10
A11
A12
A13
A14
CE
WE
OE
VCC
GND
DQ2
Control
Address Input Buffer
A18 A16 A15 A14 A0 A17 A3 A2 A1
36-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
Detailed product characteristic test report is available upon request and being accepted.
R0201-BH62UV4000
1
Revision 1.2
Aug.
2006
BH62UV4000
n PIN DESCRIPTIONS
Name
Function
A0-A18 Address Input
These 19 address inputs select one of the 524,288 x 8 bit in the RAM
CE Chip Enable 1 Input
CE is active LOW. Chip enable must be active when data read from or write to the
device. If chip enable is not active, the device is deselected and is in standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
DQ0-DQ7 Data Input/Output
Ports
VCC
8 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
VSS
Ground
n TRUTH TABLE
MODE
CE
WE
OE
I/O OPERATION
VCC CURRENT
Chip De-selected
(Power Down)
H
X
X
High Z
ICCSB, ICCSB1
Output Disabled
L
H
H
High Z
ICC
Read
L
H
L
DOUT
ICC
Write
L
L
X
DIN
ICC
NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state)
n ABSOLUTE MAXIMUM RATINGS
TBIAS
TSTG
n OPERATING RANGE
RATING
UNITS
RANG
VCC
Terminal Voltage with
Respect to GND
Temperature Under
Bias
AMBIENT
TEMPERATURE
-0.5(2) to 4.6V
V
Industrial
-40OC to + 85OC
1.65V ~ 3.6V
-40 to +125
O
C
Storage Temperature
-60 to +150
O
C
SYMBOL
VTERM
(1)
PARAMETER
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
n CAPACITANCE
(1)
O
(TA = 25 C, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
CIN
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. –2.0V in case of AC pulse width less than 30 ns
R0201-BH62UV4000
CIO
Input
Capacitance
Input/Output
Capacitance
VIN = 0V
6
pF
VI/O = 0V
8
pF
1. This parameter is guaranteed and not 100% tested.
2
Revision 1.2
Aug.
2006
BH62UV4000
O
O
n DC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
PARAMETER
NAME
PARAMETER
VCC
Power Supply
VIL
Input Low Voltage
TEST CONDITIONS
VCC=1.8V
MIN.
TYP.(1)
MAX.
UNITS
1.65
--
3.6
V
-0.3(2)
--
VCC=3.6V
VIH
Input High Voltage
IIL
Input Leakage Current
ILO
Output Leakage Current
VOL
Output Low Voltage
VOH
ICC
ICC1
ICCSB
ICCSB1
VCC=1.8V
1.4
VCC=3.6V
2.2
VIN = 0V to VCC,
CE = VIH
VI/O = 0V to V CC,
CE = VIH or OE = VIH
V
VCC+0.3(3)
V
--
--
1
uA
--
--
1
uA
--
--
VCC=1.8V
V CC = Max, IOL = 2.0mA
VCC=3.6V
V CC = Min, IOH = -0.1mA
VCC=1.8V
VCC-0.2
V CC = Min, IOH = -1.0mA
VCC=3.6V
2.4
Operating Power Supply
Current
CE = VIL,
IDQ = 0mA, f = FMAX(4)
VCC=1.8V
Operating Power Supply
Current
CE = VIL,
IDQ = 0mA, f = 1MHz
VCC=1.8V
Standby Current – TTL
CE = VIH,
IDQ = 0mA
VCC=1.8V
CE≧VCC-0.2V,
VCC=1.8V
VIN≧V CC-0.2V or VIN≦0.2V
VCC=3.6V
Standby Current – CMOS
0.8
--
V CC = Max, IOL = 0.1mA
Output High Voltage
0.4
--
---
VCC=3.6V
--
VCC=3.6V
--
0.2
0.4
--
V
8
mA
10
1.0
1.5
1.5
2.0
--
VCC=3.6V
V
0.5
1.0
mA
mA
2.0
10
2.0(5)
10
MIN.
TYP. (1)
MAX.
UNITS
1.0
--
--
V
--
1.0
5.0
uA
0
--
--
ns
tRC (2)
--
--
ns
--
uA
1. Typical characteristics are at TA=25OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. VCC=3.0V
O
O
n DATA RETENTION CHARACTERISTICS (TA = -40 C to +85 C)
SYMBOL
PARAMETER
VDR
VCC for Data Retention
ICCDR
Data Retention Current
tCDR
Chip Deselect to Data
Retention Time
tR
TEST CONDITIONS
CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
VCC=1.2V
See Retention Waveform
Operation Recovery Time
1. Typical characteristics are at TA=25OC and not 100% tested.
2. tRC = Read Cycle Time.
n LOW VCC DATA RETENTION WAVEFORM (1) (CE Controlled)
Data Retention Mode
VCC
VCC
VDR≧1.0V
tCDR
CE
R0201-BH62UV4000
VIH
VCC
tR
CE≧VCC - 0.2V
3
VIH
Revision 1.2
Aug.
2006
BH62UV4000
n AC TEST CONDITIONS
n KEY TO SWITCHING WAVEFORMS
(Test Load and Input/Output Reference)
Input Pulse Levels
VCC / 0V
Input Rise and Fall Times
1V/ns
Input and Output Timing
Reference Level
tCLZ1, tCLZ2, tOLZ, tCHZ1,
tCHZ2, tOHZ, tWHZ, tOW
Output Load
WAVEFORM
0.5Vcc
CL = 5pF+1TTL
Others
ALL INPUT PULSES
Output
GND
CL(1)
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM “H” TO “L”
WILL BE CHANGE
FROM “H” TO “L”
MAY CHANGE
FROM “L” TO “H”
WILL BE CHANGE
FROM “L” TO “H”
DON’T CARE
ANY CHANGE
PERMITTED
CHANGE :
STATE UNKNOW
DOES NOT
APPLY
CENTER LINE IS
HIGH INPEDANCE
“OFF” STATE
CL = 30pF+1TTL
VCC
1 TTL
INPUTS
90%
90%
10%
10%
→ ←
Fall Time:
1V/ns
→ ←
Rise Time:
1V/ns
1. Including jig and scope capacitance.
O
O
n AC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
READ CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
tAVAX
tRC
tAVQX
CYCLE TIME : 55ns
DESCRIPTION
UNITS
MIN.
TYP.
MAX.
Read Cycle Time
55
--
--
ns
tAA
Address Access Time
--
--
55
ns
tE1LQV
tACS
Chip Select Access Time
--
--
55
ns
tGLQV
tOE
Output Enable to Output Valid
--
--
30
ns
tE1LQX
tCLZ
Chip Select to Output Low Z
10
--
--
ns
tGLQX
tOLZ
Output Enable to Output Low Z
10
--
--
ns
tE1HQZ
tCHZ
Chip Select to Output High Z
--
--
30
ns
tGHQZ
tOHZ
Output Enable to Output High Z
--
--
25
ns
tAVQX
tOH
Data Hold from Address Change
10
--
--
ns
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
tRC
ADDRESS
tOH
tAA
tOH
DOUT
R0201-BH62UV4000
4
Revision 1.2
Aug.
2006
BH62UV4000
READ CYCLE 2
(1,3,4)
CE
tACS
tCLZ
tCHZ
(5)
(5)
DOUT
READ CYCLE 3
(1, 4)
tRC
ADDRESS
tAA
OE
tOH
tOE
tOLZ
CE
tACS
tCLZ
(5)
tOHZ
tCHZ
(5)
(1,5)
DOUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL
3. Address valid prior to or coincident with CE transition low and/or CE2 transition high.
4. OE = VIL.
5. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
R0201-BH62UV4000
5
Revision 1.2
Aug.
2006
BH62UV4000
O
O
n AC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
tAVAX
tWC
tAVWL
CYCLE TIME : 55ns
DESCRIPTION
UNITS
MIN.
TYP.
MAX.
Write Cycle Time
55
--
--
ns
tAS
Address Set up Time
0
--
--
ns
tAVWH
tAW
Address Valid to End of Write
45
--
--
ns
tELWH
tCW
Chip Select to End of Write
45
--
--
ns
tWLWH
tWP
Write Pulse Width
35
--
--
ns
tWHAX
tWR
Write Recovery Time
0
--
--
ns
tWLQZ
tWHZ
Write to Output High Z
--
--
20
ns
tDVWH
tDW
Data to Write Time Overlap
25
--
--
ns
tWHDX
tDH
Data Hold from Write Time
0
--
--
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
25
ns
tWHQX
tOW
End of Write to Output Active
5
--
--
ns
(CE, WE)
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1
(1)
tWC
ADDRESS
tWR
(3)
OE
tCW
(11)
(5)
CE
tAW
WE
tWP
tAS
tOHZ
(2)
(4,10)
DOUT
tDH
tDW
DIN
R0201-BH62UV4000
6
Revision 1.2
Aug.
2006
BH62UV4000
WRITE CYCLE 2
(1,6)
tWC
ADDRESS
tCW
(5)
CE
(11)
tAW
tWP
WE
tAS
tWHZ
(2)
(4,10)
tOW
(7)
(8)
DOUT
tDW
tDH
(8,9)
DIN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals
must be active to initiate a write and any one signal can terminate a write by going inactive. The
data input setup and hold timing should be referenced to the second transition edge of the
signal that terminates the write.
3. tWR is measured from the earlier of CE or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to
the outputs must not be applied.
5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
11. tCW is measured from the later of CE going low to the end of write.
R0201-BH62UV4000
7
Revision 1.2
Aug.
2006
BH62UV4000
n ORDERING INFORMATION
BH62UV4000
X
X
Z
YY
SPEED
55: 55ns
PKG MATERIAL
-: Normal
G: Green, RoHS Compliant
GRADE
I: -40oC ~ +85oC
PACKAGE
D: DICE
E: TSOP-II
H: BGA-36-0608
P: PDIP
S: SOP
ST: Small TSOP (8mm x 13.4mm)
T: TSOP (8mm x 20mm)
Note:
Brilliance Semiconductor Inc. (BSI) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
n PACKAGE DIMENSIONS
WITH PLATING
c
b
c1
BASE METAL
b1
SECTION
A-A
SOP -32
R0201-BH62UV4000
8
Revision 1.2
Aug.
2006
BH62UV4000
n PACKAGE DIMENSIONS (continued)
STSOP - 32
TSOP - 32
R0201-BH62UV4000
9
Revision 1.2
Aug.
2006
BH62UV4000
n PACKAGE DIMENSIONS (continued)
PDIP - 32
NOTES
:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
1.2 Max.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
BALL PITCH e = 0.75
D
E
N
D1
E1
8.0
6.0
48
5.25
3.75
E1
e
D1
VIEW A
36 mini-BGA (6 x 8mm)
R0201-BH62UV4000
10
Revision 1.2
Aug.
2006
BH62UV4000
n PACKAGE DIMENSIONS (continued)
DIMENSION
(MM)
17
32
MIN.
NOM.
b
T X
0.20
E1 -XE
e
16
"X"
Y Y
0.05
0.10
0.15
0.002
0.004
0.006
1.00
1.05
0.037
0.039
0.042
b
0.30
0.52
0.012
b1
0.30
0.45
0.012
c
0.12
0.21
0.005
c1
0.10
0.127
0.16
0.004
0.005
0.006
D
20.82
20.95
21.08
0.820
0.825
0.830
E
11.56
11.76
11.96
0.455
0.463
0.471
E1
10.03
10.16
10.29
0.394
0.400
0.405
0.40
0.50
0.60
0.016
A2
A
R1
0.12
A1
Y
0.018
0.008
0.024
0.020
0.010 BASIC
0.8 REF
0.12
0.020
0.016
0.050 BASIC
0.25 BASIC
R
ZD
0.40
1.27 BASIC
L2
SEATING PLANE
MAX.
0.047
0.95
L1
Y
NOM.
A2
L
D
MIN.
A1
e
ZD
MAX.
1.20
A
1
DIMENSION
(INCH)
0.031 REF
0.25
0.005
0.010
0.005
0.95 REF
0.037 REF
0.10
0.004
0.44 REF
-T-
L1
0
°~8
°
L
RAD R1
L2
0.44 REF
c
GAGE PLANE
DETAIL "X"
WITH PLATING
c1
c
b
b1
RAD R
BASE METAL
NOTE:
1. CONTROLLING DIMENSION : MILLIMETERS.
2. REFREENCE DOCUMENT : JEDEC MS-024
3. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.
MOLD PROTRUSION SHALL NOT EXCEED 0.15(0.006") PER SIDE.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25(0.01") PER SIDE.
4. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO
BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm
DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER
THAN THE MIN b DIMENSION BY MORE THAN 0.07mm.
SECTION Y-Y
TSOP II - 32
R0201-BH62UV4000
11
Revision 1.2
Aug.
2006
BH62UV4000
n Revision History
Revision No.
History
Draft Date
Remark
1.0
Initial Production Version
Dec. 21,2005
Initial
1.1
Change I-grade operation temperature range
- from –25OC to –40OC
May. 25, 2006
1.2
To Add 600 mil PDIP package type
To Add 400 mil TSOP-II package type
To Add 36-ball BGA package type
To Improve Icc spec.
- from 12mA to 10mA
Aug. 08, 2006
R0201-BH62UV4000
12
Revision 1.2
Aug.
2006