ILH200 HERMETIC PHOTOTRANSISTOR DUAL CHANNEL OPTOCOUPLER FEATURES • Operating Temperature Range, –55°C to +125°C • Current Transfer Ratio Guaranteed from –55°C to +100°C Ambient Temperature Range • High Current Transfer Ratio at Low Input Current • Isolation Test Voltage, 3000 VDC • Two Isolated Channels per Package • Standard 8 Pin DIP Package DESCRIPTION The ILH200 is designed especially for hi-rel applications requiring optical isolation with high current transfer ratio and low saturation VCE. Each channel of the optocoupler consists of a light emitting diode and a NPN silicon phototransistor mounted and coupled in an 8 pin hermetically sealed DIP package. The low input current makes the ILH200 well suited for direct CMOS to LSTTL/TTL interfaces. Dimensions in inches (mm) .390±.005 (9.91±.13) 8 7 6 5 .020 (.51) min. 1 2 3 .300 (7.62) typ. .320 (8.13) max. Siemens XXX XXXX XXYY 4 .150 (3.81) max. .010±.002 (.25±.05) Anode .018±.002 (.46±.05) .100 ±.010 (2.54±.25) .125 (3.18) min. Cathode Cathode Anode 1 8 2 7 Emitter Collector 3 6 4 5 Collector Emitter Maximum Ratings Emitter (per channel) Reverse Voltage ................................................................................6.0 V Forward Current ..............................................................................60 mA Peak Forward Current(1) ......................................................................1 A Power Dissipation...........................................................................75 mW Derate Linearly from 25°C ......................................................0.75 mW/°C Detector (per channel) Collector-Emitter Voltage ...................................................................70 V Emitter-Collector Voltage .....................................................................7 V Continuous Collector Current ..........................................................50 mA Power Dissipation.........................................................................100 mW Derate Linearly from 25°C ........................................................1.0 mW/°C Package Input to Output Isolation Test Voltage(2 ) ...................................3000 VDC Storage Temperature Range ..........................................–65°C to +150°C Operating Temperature Range.......................................–55°C to +125°C Junction Temperature......................................................................150°C Soldering Time at 240°C, 1.6 mm from case ................................ 10 sec. Power Dissipation.........................................................................350 mW Derate Linearly from 25°C ........................................................3.5 mW/°C Notes: 1. Values applies for PW≤1 ms, PRR≤300 pps. 2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together. TA=25°C and duration=1 second, RH=45%. 5–1 Characteristics (Each Channel), TA=25°C, unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Condition 1.46 1.7 V IF=60 mA V IR=10 µA µA VR=6 V Emitter Forward Voltage VF Reverse Breakdown Voltage VBR Reverse Current IR 0.01 Capacitance CJ 20 pF VF=0 V, f=1 MHz Thermal Resistance RTH 220 °C/W Junction to Lead Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.4 V IB=20 µA, ICE=1 mA Collector-Emitter Leakage Current ICEO 5 50 nA VCE=10 V Capacitance CCE 6.8 pF VCE=5 V, f=1 MHz Thermal Resistance RTH 220 °C/W Junction to Lead 6 10 Detector Coupled Characteristic –55°C to 100°C Saturated Current Transfer Ratio CTR(sat) 70 210 250 % IF=10 mA, VCE=0.4 V Current Transfer Ratio Collector-Emitter CTRce 100 300 450 % IF=10 mA, VCE=10 V Common Mode Rejection, Output High CMH 1000 2000 V/µs VCM=500 Vp-p, VCC=5 V, RL=1 KΩ, IF=0 mA Common Mode Rejection, Output High CML 1000 2000 V/µs VCM=500 Vp-p, VΧΧ=5 V, RL=1 KΩ, IF=10 mA Package Capacitance CIO 1.5 pF VIO=0 V, 1 MHz Insulation Resistance RIO 1014 W VIO=500 VDC Leakage Current, Input–Output IIO µA Relative Humidity ≤50%, VIO 3000 VDC, 5 sec. Isolation and Insulation 1011 10 Typical Switching Speeds, TA=25°C Non-Saturated Switching Symbol Typ. Max. Unit Test Condition Delay td 0.8 2 µs Rise tr 2 5 µs VCC=5 V Storage ts 0.4 1.5 µs RL=75 Ω Fall tf 2 5 µs IF=10 mA Propagation–High to Low tpHL 1 3 µs 50% of Vpp Propagation–Low to High tpLH 1.5 4 µs Saturated Switching(1) Symbol Typ. Max. Unit Delay td 0.7 2 µs Rise tr 1 3 µs VCE=0.4 V Storage ts 13.5 30 µs RL=1 KΩ Fall tf 12 30 µs IF=10 mA Propagation–High to Low tpHL 1.4 5 µs VCC=5 V, VTH=1.5 V Propagation–Low to High tpLH 15 40 µs Test Condition ILH200 5–2 Figure 1. Forward current versus forward voltage and temperature g p 25°C 125°C 10 1 -55°C -25°C 0°C .1 0.8 85°C 1.0 1.2 1.4 1.6 VF - Forward Voltage - V IF(Pk) - Peak LED Current - A 0.2 25°C 10KHz 1KHz 100Hz 125°C 60 mA 0.0 0 20 40 60 80 DF - Duty Factor - % 0.8 5 mA .5 mA 0.4 0.2 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - °C 125 Figure 4. Normalized non-saturated current transfer ratio versus temperature and LED current Vce = 10 V 1.0 60 mA 0.2 Normalized to: Ta = 25°C Vce = 10 V , IF = 10 mA 0.1 0.0 -25 0 25 50 75 100 Ta - Ambient Temperature - °C 125 Vce = 10 V 10 10 mA 5 mA 1 mA 1 0.5 mA .1 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - °C 125 Figure 8. Collector-emitter current versus temperature and LED current 200 10 mA Ice - Collector Current - mA NCTRce - Normalized CTR 1.1 20 mA 0.3 100 10 mA 1 mA 30 mA 0.4 Figure 7. Collector-emitter current versus temperature and LED current Normalized to: Ta = 25 °C Vce = 10V, IF = 10 mA 0.6 0.5 -50 Ice - Collector Current - mA NCTRce - Normalized CTR 1.0 125 Vce = 0.4 V 10 mA 0.6 100 Figure 3. Normalized non-saturated current transfer ratio versus temperature and LED current 1.2 1 mA 0.3 Normalized to Ta =25°C Vce = 10 V, IF = 10 mA 0.2 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - °C NCTR(sat)- Normalized Saturated CTR 1KHz 0.4 0.4 0.7 100 Hz 0.6 0.5 mA 0.5 Figure 6. Normalized saturated current transfer ratio versus temperature and LED current 1.0 0.8 10 mA 0.6 Tj(max) = 150°C 10KHz Vce = 0.4 V 5 mA 0.7 1.8 Figure 2. Peak LED current versus duty factor refresh rate and temperature 1.2 0.8 NCTRce(sat) - Normalized Saturated CTR IF - Forward Current - mA 100 Figure 5. Normalized saturated current transfer ratio versus temperature and LED current p 20 mA 0.9 0.8 0.7 30 mA 0.6 60 mA 0.5 Normalized to: Ta = 25°C Vce = 10V, IF = 10 mA 0.4 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - °C 125 Vce = 10 V 150 60 mA 100 50 30 mA 20 mA 10 mA 0 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - °C 125 ILH200 5–3 Figure 9. Saturated collector-emitter current versus temperature and LED current Figure 13. Propagation delay versus temperature and collector load resistance for IF=10 mA 1000 10 5 mA 10 mA Propagation Delay - µs Ice - Collector Current - mA 100 20 mA 30 mA 60 mA 1 mA 1 0.5 mA Vce = 0.4 V .1 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - °C 2.2KΩ tpLH 10 10 10 mA 5 mA 1 mA 1 0.5 mA 125 WORST CASE Vce = 10V TYPICAL 10 -1 10 -2 -20 47KΩ tpLH 100 10KΩ tpLH 2.2KΩ tpLH 10 10KΩ tpHL 2.2KΩ tpHL 47KΩ tpHL -25 0 25 50 75 100 Ta - Ambient Temperature - °C 125 20000 Ta=25 °C, Vcc=5.0V If(low)=10 ma, RL=1k Ω If(high)=0 ma 15000 CMR(low) 10000 CMR(high) 5000 0 1000 1200 1400 1600 1800 2000 2200 Vcm-comm on Mode Voltage (v) 0 20 40 60 80 100 Ta - Ambient Temperature - °C Figure 12. Propagation delay versus temperature and collector load resistance for IF=5 mA 1000 Vcc = 5.25V, Rbe = open, Vth = 1.5V 25000 10 1 10 0 125 Figure 15. Common mode transient rejection Rate of Common Mode Voltage Change-V/µs Iceo - Collector-Emitter - nA Figure 11. Collector-emitter leakage current versus temperature 10 5 4 10 3 10 10 2 -25 0 25 50 75 100 Ta - Ambient Temperature - °C 1 -50 .1 -25 0 25 50 75 100 Ta - Ambient Temperature - °C 47KΩ tpHL 1 -50 1000 Vce = 0.4 V 10KΩ tpHL 2.2KΩ tpHL Propagation Delay - µs Ice - Collector Current - mA 10KΩ tpLH Figure 14. Propagation delay versus temperature and collector load resistance for IF=20 mA 100 -50 Propagation Delay - µs 47KΩ tpLH 100 125 Figure 10. Saturated collector-emitter current versus temperature and LED current Vcc = 5.25V, Rbe = open, Vth = 1.5V Figure 16. Saturated switching VCC IF Vcc = 5.25V, Rbe = open, Vth = 1.5V 47KΩ tpLH RL 100 VO 10KΩ tpLH 2.2KΩ tpLH 10 2.2KΩ tpHL 1 -50 10KΩ tpHL VO 47KΩ tpHL -25 0 25 50 75 100 Ta - Ambient Temperature - °C t PLH t PHL VTH =1.5 V 125 ILH200 5–4