Philips Semiconductors Product specification Dual diode fast, high-voltage FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab BYM359DX SYMBOL modulator QUICK REFERENCE DATA damper 1 3 2 GENERAL DESCRIPTION Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in colour TV and PC monitors. The BYM359DX contains diodes with performance characteristics designed specifically for applications from 16kHz to 56kHz DAMPER MODULATOR VR=1500 V VR=800 V VF ≤ 1.3 V VF ≤ 1.45 V IF(RMS) =15.7 A IF(RMS) = 11 A IFSM ≤ 60 A IFSM ≤ 60 A trr ≤ 300 ns trr ≤ 145 ns PINNING PIN SOT399 DESCRIPTION 1 modulator anode. 2 common anode/cathode 3 damper cathode case 1 2 3 The BYM359DX series is supplied in the conventional leaded SOT399 package. LIMITING VALUES Tj = 25 ˚C unless otherwise stated DAMPER SYMBOL PARAMETER VRSM MIN MAX MIN MAX UNIT - 1500 - 800 V VRRM Peak non-repetitive reverse voltage. Peak repetitive reverse voltage - 1500 - 600 V VRWM Crest working reverse voltage - 1300 - 600 V IF(AV) IF(RMS) IFRM Average forward current RMS forward current Peak repetitive forward current - 10 15.7 20 - 8 11.0 16.0 A A A IFSM Peak non-repetitive forward current - 60 66 - 60 66 A A Tstg TJ Storage temperature Operating junction temperature -40 - 150 150 -40 - 150 150 ˚C ˚C March 2000 CONDITIONS MODULATOR sinusoidal;a=1.57 t=25 µs δ= 0.5 Ths ≤ 83 ˚C t = 10ms t = 8.3 ms sinusoidal; with reapplied VRWM(MAX) 1 Rev 1.000 Philips Semiconductors Product specification Dual diode fast, high-voltage BYM359DX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. MAX. UNIT - - 2500 V - 22 - pF THERMAL RESISTANCES DAMPER MODULATOR SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT Rth j-hs Thermal resistance junction to heatsink with heatsink compound - 3.5 - 3.5 K/W Rth j-a Thermal resistance junction to ambient in free air. 35 - - 35 K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated DAMPER MODULATOR SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT VF Forward voltage IR Reverse current IF = 6.5 A IF = 6.5 A; Tj = 125˚C VR = VRWM VR = VRWM Tj = 100 ˚C 1.1 1.05 10 50 1.45 1.3 250 500 1.15 1.1 10 100 1.55 1.45 100 600 V V µA µA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated DAMPER MODULATOR SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT trr Reverse recovery time 200 300 125 145 ns Qs Vfr Reverse recovery charge Peak forward recovery voltage IF = 1 A; VR ≥ 30 V; -dIF/dt = 50 A/µs 2 A,30 V,20 A/µs IF = 6.5 A; dIF/dt = 50 A/µs 1.2 27 2.0 - 0.5 18.0 0.7 - µC V March 2000 2 Rev 1.000 Philips Semiconductors Product specification Dual diode fast, high-voltage I dI F BYM359DX Ths(max) / C BY329 PF / W 15 F Vo = 1.25 V dt 78 a = 1.57 Rs = 0.03 Ohms 1.9 trr 2.2 10 102 2.8 time 4 126 5 Qs I I R 100% 25% 0 2 4 IF(AV) / A 6 Fig.4. Modulator maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form factor = IF(RMS)/IF(AV). Fig.1. Definition of trr, Qs and Irrm I 150 8 0 rrm F 80 BY229 IFS(RMS) / A 70 IFSM 60 50 time 40 VF 30 20 V fr 10 VF 0 1ms 10ms time Ths(max) / C BY329 PF / W 30 54 IF / A D = 1.0 Vo = 1.25 V Rs = 0.03 Ohms 15 10s BY229F Tj = 150 C Tj = 25 C 78 0.5 20 0.2 10 1s Fig.5. Modulator maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM. Fig.2. Definition of Vfr 20 0.1s tp / s 102 0.1 tp I D= 5 2 4 6 IF(AV) / A 8 10 126 typ 10 150 12 0 0 Fig.3. Modulator maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T. March 2000 max t T 0 0 tp T 0.5 1 VF / V 1.5 2 Fig.6. Modulator typical and maximum forward characteristic; IF = f(VF); parameter Tj 3 Rev 1.000 Philips Semiconductors Product specification Dual diode fast, high-voltage BYM359DX BY329 Qs / uC 10 BY329 Cd / pF 100 Tj = 150 C Tj = 25 C IF = 10 A 10 A 2A 1A 2A 1 10 1A 0.1 10 -dIF/dt (A/us) 1 1 100 Fig.7. Modulator maximum Qs at Tj = 25˚C and 150˚C 1000 10 1 1000 VR / V 100 Fig.9. Modulator typical junction capacitance Cd at f = 1 MHz; Tj = 25˚C BY329 trr / ns 10 Transient thermal impedance, Zth j-hs (K/W) IF = 10 A 10A 1 1A 1A 0.1 100 PD 0.01 Tj = 150 C Tj = 25 C 0.001 1us 10 1 10 -dIF/dt (A/us) 100 Fig.8. Modulator maximum trr measured to 25% of Irrm; Tj = 25˚C and 150˚C March 2000 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229F 10s Fig.10. Modulator transient thermal impedance Zth = f(tp) 4 Rev 1.000 Philips Semiconductors Product specification Dual diode fast, high-voltage BYM359DX BY359 IFS(RMS) / A 80 IF / A BY359 30 Tj=150C 70 Tj=25C IFSM 60 20 50 40 30 typ 10 20 10 max 0 1ms 10ms 0.1s tp / s 1s 0 10s 0 2.0 VF / V Fig.11. Damper maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM. 10 1.0 Fig.13. Damper forward characteristic IF = f(VF); parameter Tj Transient thermal impedance, Zth j-mb (K/W) 1 0.1 PD 0.01 0.001 1us tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY359 10s Fig.12. Damper transient thermal impedance Zth = f(tp) March 2000 5 Rev 1.000 Philips Semiconductors Product specification Dual diode fast, high-voltage BYM359DX MECHANICAL DATA Dimensions in mm 5.8 max 16.0 max Net Mass: 5.88 g 3.0 0.7 4.5 3.3 10.0 27 max 25 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 5.45 0.9 max 5.45 3.3 Fig.14. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 2000 6 Rev 1.000 Philips Semiconductors Product specification Dual diode fast, high-voltage BYM359DX DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 2000 7 Rev 1.000