PHILIPS BYM359X

Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling
performance
• Isolated mounting tab
BYM359X
SYMBOL
damper
QUICK REFERENCE DATA
modulator
1
3
2
GENERAL DESCRIPTION
Combined damper and modulator
diodes in an isolated plastic
envelope for horizontal deflection in
colour TV and PC monitors.
The BYM359X contains diodes
with performance characteristics
designed specifically for
applications from 16kHz to 56kHz
DAMPER
MODULATOR
VR=1500 V
VR=800 V
VF ≤ 1.3 V
VF ≤ 1.45 V
IF(RMS) =15.7 A
IF(RMS) = 11 A
IFSM ≤ 60 A
IFSM ≤ 60 A
trr ≤ 300 ns
trr ≤ 145 ns
PINNING
PIN
SOT186A
DESCRIPTION
case
1
damper cathode
2
common anode/cathode
3
modulator anode.
The BYM359X series is supplied in
the conventional leaded SOT186A
package.
1 2 3
LIMITING VALUES
Tj = 25 ˚C unless otherwise stated
DAMPER
SYMBOL
PARAMETER
VRSM
MIN
MAX
MIN
MAX
UNIT
-
1500
-
800
V
VRRM
Peak non-repetitive reverse
voltage.
Peak repetitive reverse voltage
-
1500
-
600
V
VRWM
Crest working reverse voltage
-
1300
-
600
V
IF(AV)
IF(RMS)
IFRM
Average forward current
RMS forward current
Peak repetitive forward current
-
10
15.7
20
-
8
11.0
16.0
A
A
A
IFSM
Peak non-repetitive forward
current
-
60
66
-
60
66
A
A
Tstg
TJ
Storage temperature
Operating junction temperature
-40
-
150
150
-40
-
150
150
˚C
˚C
December 1999
CONDITIONS
MODULATOR
sinusoidal;a=1.57
t=25 µs δ= 0.5
Ths ≤ 83 ˚C
t = 10ms
t = 8.3 ms
sinusoidal;
with reapplied
VRWM(MAX)
1
Rev 1.200
Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
BYM359X
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
MAX.
UNIT
-
-
2500
V
-
10
-
pF
THERMAL RESISTANCES
DAMPER
MODULATOR
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
TYP.
MAX.
UNIT
Rth j-hs
Thermal resistance junction to
heatsink
with heatsink
compound
-
4.8
-
4.8
K/W
Rth j-a
Thermal resistance junction to
ambient
in free air.
55
-
-
55
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
DAMPER
MODULATOR
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
TYP.
MAX.
UNIT
VF
Forward voltage
IR
Reverse current
IF = 6.5 A
IF = 6.5 A; Tj = 125˚C
VR = VRWM
VR = VRWM
Tj = 100 ˚C
1.1
1.05
10
50
1.45
1.3
250
500
1.15
1.1
10
100
1.55
1.45
100
600
V
V
µA
µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
DAMPER
MODULATOR
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
TYP.
MAX.
UNIT
trr
Reverse recovery time
200
300
125
145
ns
Qs
Vfr
Reverse recovery charge
Peak forward recovery voltage
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 50 A/µs
2 A,30 V,20 A/µs
IF = 6.5 A;
dIF/dt = 50 A/µs
1.2
27
2.0
-
0.5
18.0
0.7
-
µC
V
December 1999
2
Rev 1.200
Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
I
dI
F
BYM359X
Ths(max) / C
BY329
PF / W
15
F
Vo = 1.25 V
dt
78
a = 1.57
Rs = 0.03 Ohms
1.9
trr
2.2
10
102
2.8
time
4
126
5
Qs
I
I
R
100%
25%
0
2
4
IF(AV) / A
6
Fig.4. Modulator maximum forward dissipation,
PF = f(IF(AV)); sinusoidal current waveform; parameter
a = form factor = IF(RMS)/IF(AV).
Fig.1. Definition of trr, Qs and Irrm
I
150
8
0
rrm
F
80
BY229
IFS(RMS) / A
70
IFSM
60
50
time
40
VF
30
20
V
fr
10
VF
0
1ms
10ms
time
Ths(max) / C
BY329
PF / W
30
54
IF / A
D = 1.0
Vo = 1.25 V
Rs = 0.03 Ohms
15
10s
BY229F
Tj = 150 C
Tj = 25 C
78
0.5
20
0.2
10
1s
Fig.5. Modulator maximum non-repetitive rms forward
current. IF = f(tp); sinusoidal current waveform;
Tj = 150˚C prior to surge with reapplied VRWM.
Fig.2. Definition of Vfr
20
0.1s
tp / s
102
0.1
tp
I
D=
5
2
4
6
IF(AV) / A
8
10
126
typ
10
150
12
0
0
Fig.3. Modulator maximum forward dissipation,
PF = f(IF(AV)); square wave current waveform;
parameter D = duty cycle = tp/T.
December 1999
max
t
T
0
0
tp
T
0.5
1
VF / V
1.5
2
Fig.6. Modulator typical and maximum forward
characteristic; IF = f(VF); parameter Tj
3
Rev 1.200
Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
10
BYM359X
BY329
Qs / uC
BY329
Cd / pF
100
Tj = 150 C
Tj = 25 C
IF = 10 A
10 A
2A
1A
2A
1
10
1A
0.1
10
-dIF/dt (A/us)
1
1
100
Fig.7. Modulator maximum Qs at Tj = 25˚C and 150˚C
1000
VR / V 100
Fig.9. Modulator typical junction capacitance Cd at
f = 1 MHz; Tj = 25˚C
10
1000
10
1
Transient thermal impedance, Zth j-hs (K/W)
BY329
trr / ns
IF = 10 A
1
10A
1A
0.1
1A
100
PD
0.01
Tj = 150 C
Tj = 25 C
0.001
1us
10
1
10
-dIF/dt (A/us)
100
D=
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY229F
10s
Fig.10. Modulator transient thermal impedance
Zth = f(tp)
Fig.8. Modulator maximum trr measured to 25% of Irrm;
Tj = 25˚C and 150˚C
December 1999
tp
4
Rev 1.200
Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
BYM359X
BY359
IFS(RMS) / A
80
IF / A
BY359
30
Tj=150C
70
Tj=25C
IFSM
60
20
50
40
30
typ
10
20
10
max
0
1ms
10ms
0.1s
tp / s
1s
0
10s
0
2.0
VF / V
Fig.11. Damper maximum non-repetitive rms forward
current. IF = f(tp); sinusoidal current waveform;
Tj = 150˚C prior to surge with reapplied VRWM.
10
1.0
Fig.13. Damper forward characteristic IF = f(VF);
parameter Tj
Transient thermal impedance, Zth j-hs (K/W)
1
0.1
PD
0.01
0.001
1us
tp
D=
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY359F
10s
Fig.12. Damper transient thermal impedance
Zth = f(tp)
December 1999
5
Rev 1.200
Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
BYM359X
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
max.
19
max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.14. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
December 1999
6
Rev 1.200
Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
BYM359X
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
December 1999
7
Rev 1.200