MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V4450A 4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 - 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=4.4 - 5.0 GHz High power gain GLP = 10 dB (TYP.) @ f=4.4 - 5.0GHz High power added efficiency P.A.E. = 34 % (TYP.) @ f=4.4 - 5.0GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. APPLICATION item 01 : 4.4 - 5.0 GHz band power amplifier item 51 : 4.4 - 5.0 GHz band digital ratio communication QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 8 (A) RG=25 (ohm) ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C) < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into Symbol Ratings Unit making semiconductor products better and more reliable, VGDO Gate to drain voltage -15 V but there is always the possibility that trouble may occur VGSO Gate to source voltage -15 V with them. Trouble with semiconductors may lead to personal Drain current 20 A injury, fire or property damage. Remember to give due IGR Reverse gate current -80 mA consideration to safety when making your circuit designs, IGF Forward gate current 168 mA with appropriate measures such as (1)placement of Total power dissipation 150 W Tch Channel temperature 175 deg.C Tstg Storage temperature -65 / +175 deg.C ID PT *1 Parameter substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP Parameter (Ta=25deg.C) Min. Limits Typ. Max. Test conditions Unit Saturated drain current VDS = 3V , VGS = 0V - 24 - Transconductance VDS = 3V , ID = 8A - 8 - S Gate to source cut-off voltage VDS = 3V , ID = 160mA -2 - -5 V 44 45 - dBm dB Output power at 1dB gain compression 9 10 - Drain current - 8 - A P.A.E. Power added efficiency - 34 - % IM3 *2 3rd order IM distortion -42 -45 - dBc - 0.8 1 deg.C/W ID Rth(ch-c) *3 Linear power gain Thermal resistance VDS=10V, ID(RF off)=8A, f=4.4 - 5.0GHz A delta Vf method *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=4.4,3.5,5.0GHz,delta f=10MHz *3 : Channel-case MITSUBISHI ELECTRIC Feb. 1999 MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY MGFC45V4450A Notice: This is not a final specification. Some parametric limits are subject to change. 4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS P1dB,GLP vs. f Po, P.A.E. vs. Pin OUTPUT POWER Po (dBm) 18 P1dB 16 45 44 14 43 12 GLP 10 42 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5 45 80 Po 40 60 35 40 add 30 20 25 8 41 100 VDS=10V IDS=8A f=4.7GHz 0 20 5.1 POWER ADDED EFFICIENCY (%) VDS=10V IDS=8A 46 LINEAR POWER GAIN GLP (dB) OUTPUT POWER P1dB (dBm) 50 20 47 25 30 35 40 INPUT POWER Pin (dBm) FREQUENCY f (GHz) Po,IM3 vs. Pin 36 0 VDS=10V IDS=8A f1=5.00GHz f2=5.01GHz 2-tone test -10 Po 34 -20 32 -30 30 -40 IM3 28 -50 26 -60 24 -70 17 S parameters IM3 (dBc) OUTPUT POWER Po (dBm S.C.L.) 38 19 21 23 25 27 29 INPUT POWER Pin (dBm S.C.L.) 31 ( Ta=25deg.C , VDS=10(V),IDS=8(A) ) S-Parameter (TYP.) f S21 S11 S12 S22 (GHz) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. 4.4 0.58 -132 0.04 2 2.881 54 0.30 Angle(deg.) -56 4.5 0.59 -163 0.04 -21 2.936 31 0.23 -82 4.6 0.58 171 0.05 -52 2.865 8 0.16 -125 4.7 0.59 151 0.05 -67 2.782 -12 0.18 -170 4.8 0.56 134 0.05 -94 2.670 -32 0.24 160 4.9 0.54 120 0.05 -112 2.628 -51 0.32 138 5.0 0.50 111 0.06 -129 2.528 -70 0.38 125 MITSUBISHI ELECTRIC Feb. 1999