FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 7.5 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Limit Typ. Max. Unit Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with gate resistance of 200Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. VDS = 5V, VGS = 0V - 600 900 mA Transconductance gm VDS = 5V, IDS = 400mA - 300 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 30mA -1.0 -2.0 -3.5 V -5 - - V 30.5 31.8 - dBm 6.5 7.5 - dB - 35 - % - 15 20 °C/W Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Power-added Efficiency ηadd Thermal Resistance Rth IGS = -30µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 6 GHz Channel to Case CASE STYLE: WF Edition 1.1 July 1999 G.C.P.: Gain Compression Point 1 FLC167WF C-Band Power GaAs FET DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 8 Drain Current (mA) Total Power Dissipation (W) POWER DERATING CURVE 10 6 4 2 VGS =0V 600 -0.5V 400 -1.0V 200 -1.5V -2.0V 0 50 100 150 200 0 2 Case Temperature (°C) 4 6 8 10 Drain-Source Voltage (V) VDS=10V f1 = 6.0 GHz f2 = 6.01GHz 2-tone Test 27 25 23 -10 -20 Pout 21 -30 IM3 19 -40 17 IM3 (dBc) Output Power (S.C.L.) (dBm) OUTPUT POWER & IM3 vs. INPUT POWER -50 10 12 14 16 18 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level P1dB & ηadd vs. VDS OUTPUT POWER vs. INPUT POWER 28 26 24 22 20 50 40 4 GHz 6 GHz ηadd 30 20 10 P1dB (dBm) out 50 32 P1dB 31 40 ηadd 30 30 8 14 16 18 20 22 24 9 10 Drain-Source Voltage (V) Input Power (dBm) 2 ηadd (%) 4 GHz f=6GHz IDS ≈ 0.6 IDSS 6 GHz ηadd (%) Output Power (dBm) VDS=10V 32 IDS ≈ 0.6 IDSS 30 P FLC167WF C-Band Power GaAs FET S11 S22 +j50 +j100 11 SCALE FOR |S12| 10 9 8 +j25 7 12 12 6 11 5 +j250 10 9 +j10 4 8 7 3 10 0 2GHz 6 5 25 4 3 50Ω 100 180° 250 4 3 2 -j10 .08 2GHz .06 .04 3 .02 1 12 SCALE FOR |S21| 2GHz S21 S12 +90° 4 9 7 10 5 2GHz 5 6 4 6 7 8 9 10 0° 11 -j250 12 -j25 -j100 -j50 -90° S11 S-PARAMETERS VDS = 10V, IDS = 360mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG 500 .922 -104.6 11.190 119.4 .025 1000 .895 -142.7 6.587 94.0 2000 .887 -171.4 3.424 3000 .884 174.4 4000 .877 5000 ANG S22 MAG ANG 36.5 .234 -124.6 .029 18.2 .290 -142.9 67.1 .030 5.3 .360 -150.5 2.295 47.9 .030 1.0 .423 -153.5 163.1 1.762 30.6 .031 0.1 .475 -158.3 .873 149.8 1.452 13.0 .034 -1.9 .511 -165.9 6000 .870 134.2 1.227 -6.0 .038 -5.5 .547 -177.6 7000 .867 118.6 1.019 -24.9 .040 -12.7 .585 168.5 8000 .860 106.0 .843 -40.9 .044 -13.1 .625 157.3 9000 .866 95.5 .725 -54.7 .051 -17.7 .664 148.4 10000 .875 84.0 .656 -69.2 .060 -22.9 .692 138.4 11000 .877 70.5 .596 -85.7 .072 -32.1 .717 124.3 12000 .871 57.3 .525 -101.4 .082 -42.2 .747 110.6 Download S-Parameters, click here 3 FLC167WF C-Band Power GaAs FET Ø1.6±0.01 (0.063) 1.0 Min. (0.039) Case Style "WF" Metal-Ceramic Hermetic Package 2.5 (0.098) 2.5±0.15 (0.098) 1 2 3 0.1±0.05 (0.004) 1.0 Min. (0.039) 0.6 (0.024) 6.1±0.1 (0.240) 0.8±0.1 (0.031) 2.5 Max. (0.098) 8.5±0.2 (0.335) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4