RHRU50120 April 1995 File Number 3946.1 50A, 1200V Hyperfast Diode Features The RHRU50120 (TA49100) are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Avalanche Energy Rated PACKAGE TO-218 • Planar Construction Applications • Switching Power Supplies • General Purpose PACKAGING AVAILABILITY RHRU50120 • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V • Power Switching Circuits Ordering Information PART NUMBER • Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC BRAND RHRU50120 Package SINGLE LEAD JEDEC STYLE TO-218 NOTE: When ordering, use the entire part number. ANODE CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 50oC) Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 1 RHRU50120 UNITS 1200 1200 1200 50 V V V A 100 A 500 A 150 50 -65 to +175 W mj oC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 RHRU50120 TC = +25oC, Unless Otherwise Specified Electrical Specifications RHRU50120 LIMITS SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 50A, TC = +25oC - - 3.2 V IF = 50A, TC = +150oC - - 2.6 V VR = 1200V, TC = +25oC - - 500 µA VR = 1200V, TC = +150oC - - 1.0 mA IF = 1A, dIF/dt = 100A/µs - - 85 ns IF = 50A, dIF/dt = 100A/µs - - 100 ns tA IF = 50A, dIF/dt = 100A/µs - 50 - ns tB IF = 50A, dIF/dt = 100A/µs - 40 - ns QRR IF = 50A, dIF/dt = 100A/µs - 240 - nC VR = 10V, IF = 0A - 150 - pF 1.0 oC/W VF IR tRR CJ RθJC - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF R4 + LLOOP R1 +V3 t1 ≥ 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) ≤ R4 10 Q2 Q1 +V1 0 IF LLOOP t2 R2 t1 DUT dIF dt tRR tA Q4 0.25 IRM t3 IRM C1 0 R4 VR Q3 -V2 tB 0 -V4 R3 VRM FIGURE 1. tRR TEST CIRCUIT 2 FIGURE 2. tRR WAVEFORMS AND DEFINITIONS RHRU50120 Typical Performance Curves 300 3000 +175oC IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 1000 100 +100oC 10 1 +25oC +175oC 0 1 2 3 100 +100oC 10 1 0.1 4 +25oC 0 60 tA 40 tB 20 tRR 150 tA 100 tB 50 10 IF, FORWARD CURRENT (A) TC = +175oC t, RECOVERY TIMES (ns) 300 tRR 200 tA tB 0 10 IF, FORWARD CURRENT (A) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC 3 50 IF(AV) , AVERAGE FORWARD CURRENT (A) FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC 400 1 50 IF, FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC 100 1200 200 0 1 50 10 1000 TC = +100oC 250 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) tRR 0 1 800 FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE TC = +25oC 80 600 VR, REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP 100 400 200 VF, FORWARD VOLTAGE (V) 50 DC 40 SQ. WAVE 30 20 10 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 8. CURRENT DERATING CURVE 175 RHRU50120 Typical Performance Curves (Continued) CJ , JUNCTION CAPACITANCE (pF) 600 500 400 300 200 100 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 L 130Ω R + VDD 1MΩ DUT 12V VAVL Q2 130Ω IL CURRENT SENSE IL I V VDD t0 12V FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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