FDS6680AS 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low and low gate charge. The FDS6680AS RDS(ON) includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode. • 11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V RDS(ON) max= 12.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (22nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • Applications High power and current handling capability • DC/DC converter • Low side notebooks D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current 11.5 A – Continuous (Note 1a) – Pulsed PD Power Dissipation for Single Operation 50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG W 1 –55 to +150 °C (Note 1a) 50 °C/W (Note 1) 25 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680AS FDS6680AS 13’’ 12mm 2500 units FDS6680AS FDS6680AS_NL (Note 4) 13’’ 12mm 2500 units ©2005 Fairchild Semiconductor Corporation FDS6680AS Rev B(X) FDS6680AS March 2005 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 1 mA Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA 3 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) 30 V 29 ID = 1 mA, Referenced to 25°C mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 1 mA ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 15 V, ID = 11.5 A 1 1.5 ID = 1 mA, Referenced to 25°C –3 VGS = 10 V, ID = 11.5 A ID = 9.5 A VGS = 4.5 V, VGS=10 V, ID =11.5A, TJ=125°C 8.4 10.3 12.3 mV/°C 10.0 12.5 15.5 50 mΩ A 48 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time td(on) Turn–On Delay Time tr Turn–On Rise Time VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1240 pF 350 pF 120 pF Ω VGS = 15 mV, f = 1.0 MHz 1.4 9 18 ns VDS = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 5 10 ns (Note 2) VDS = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω 27 42 ns 11 21 ns 11 20 ns 12 22 ns td(off) Turn–Off Delay Time 18 32 ns tf Turn–Off Fall Time 11 20 ns Qg(TOT) Total Gate Charge at Vgs=10V 22 30 nC 12 16 Qg Total Gate Charge at Vgs=5V Qgs Gate–Source Charge 3.5 nC Qgd Gate–Drain Charge 3.4 nC VDD = 15 V, ID = 11.5 A, nC FDS6680AS Rev B(X) FDS6680AS Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units 3.5 A 0.7 V Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time VGS = 0 V, VGS = 0 V, IF = 11.5A, Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs IS = 3.5 A IS = 7 A (Note 2) (Note 2) (Note 3) 0.5 0.6 18 12 nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in2 pad of 2 oz copper b) 105°/W when mounted on a .04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. 4. FDS6680AS_NL is a lead free product. The FDS6680AS_NL marking will appear on the reel label. FDS6680AS Rev B(X) FDS6680AS Electrical Characteristics FDS6680AS Typical Characteristics 2 50 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V 4.0V 6.0V ID, DRAIN CURRENT (A) 40 4.5V 3.0V 30 20 2.5V 10 1.6 3.5V 1.4 4.0V 4.5V 1.2 0 6.0V 10.0V 1 0.4 0.8 1.2 1.6 VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 Figure 1. On-Region Characteristics. 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 0.05 ID = 11.5A VGS = 10V RDS(ON), ON-RESISTANCE (OHM) ID = 6A 1.2 1 0.8 0.04 0.03 o 0.02 TA = 125 C 0.01 o TA = 25 C 0 0.6 -50 -25 0 25 50 o TJ, JUNCTION TEMPERATURE ( C) 75 2 100 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 50 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 40 ID, DRAIN CURRENT (A) 5.0V 0.8 0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.0V 1.8 30 TA = 125oC 20 -55oC 10 o 25 C 1 TA = 125oC 0.1 25oC 0.01 o -55 C 0.001 0.0001 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6680AS Rev B(X) FDS6680AS Typical Characteristics (continued) 1800 f = 1MHz VGS = 0 V ID =11.5A 1500 VDS = 10V 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 2 1200 Ciss 900 600 Coss 300 Crss 0 0 0 5 10 15 Qg, GATE CHARGE (nC) 20 0 25 Figure 7. Gate Charge Characteristics. 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 50 100 P(pk), PEAK TRANSIENT POWER (W) 1000 RDS(ON) LIMIT 100µs 1ms 10ms 10 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 o TA = 25 C 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.01 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 5 0.1 1 10 t1, TIME (sec) 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 125 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6680AS Rev B(X) FDS6680AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 3A/DIV IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6680AS. TA = 125oC 0.01 0.001 TA = 100oC 0.0001 0.00001 TA = 25oC 0.000001 0 10nS/DIV 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDS6680AS SyncFET body diode reverse recovery characteristic. Current: 3A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6680). 0 10nS/div Figure 13. Non-SyncFET (FDS6680) body diode reverse recovery characteristic. FDS6680AS Rev B(X) FDS6680AS Typical Characteristics L VDS BVDSS tP VGS RGE + DUT VGS VDS IAS VDD VDD - 0V tp vary tP to obtain required peak IAS IAS 0.01Ω tAV Figure 15. Unclamped Inductive Load Test Circuit Figure 16. Unclamped Inductive Waveforms Drain Current Same type as + 50kΩ 10V - 10µF + 1µF VDD - VGS QG(TOT) 10V DUT QGD QGS VGS Ig(REF Charge, (nC) Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform tON VDS VGS RGEN td(ON) RL VDS tr 90% tOFF td(OFF tf ) 90% + VDD DUT VGSPulse Width ≤ 1µs Duty Cycle ≤ 0.1% Figure 19. Switching Time Test Circuit - 10% 0V 90% VGS 0V 10% 50% 10% 50% Pulse Width Figure 20. Switching Time Waveforms FDS6680AS Rev B(X) The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 8 FDS6680AS Rev. A (X) www.fairchildsemi.com FDS6680AS 30V N-Channel PowerTrench® SyncFET™ TRADEMARKS