FDD6030L 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. • 12 A, 30 V Applications • Fast Switching Speed • DC/DC converter • High performance trench technology for extremely low RDS(ON) RDS(ON) = 14.5 mΩ @ VGS = 10 V RDS(ON) = 21 mΩ @ VGS = 4.5 V • Low gate charge • Motor Drives D D G S G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current @TC=25°C (Note 3) 50 A @TA=25°C (Note 1a) 12 Pulsed (Note 1a) 100 PD Parameter Power Dissipation TJ, TSTG @TC=25°C (Note 3) 56 @TA=25°C (Note 1a) 3.2 @TA=25°C (Note 1b) W 1.5 –55 to +175 °C (Note 1) 2.7 °C/W (Note 1a) 45 (Note 1b) 96 Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient RθJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6030L FDD6030L D-PAK (TO-252) 13’’ 12mm 2500 units 2003 Fairchild Semiconductor Corporation FDD6030L Rev E FDD6030L August 2003 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy IAS Drain-Source Avalanche Current Single Pulse, VDD = 15 V, ID= 12A 100 mJ 12 A Off Characteristics ID = 250 µA 30 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, VDS = 24 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA 1.9 –5 3 V mV/°C 7.7 9.9 11.4 14.5 21 25 mΩ On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID = 250 µA,Referenced to 25°C 24 mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient ID = 250 µA VDS = VGS, ID = 250 µA,Referenced to 25°C Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 12 A,TJ=125°C VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 12 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1 50 A 47 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VGS = 15 mV, f = 1.0 MHz VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 1230 pF 325 pF 150 pF 1.5 pF (Note 2) VDS = 15V, VGS = 5 V ID = 12 A, 10 19 ns 7 13 ns 29 46 ns 12 21 ns 13 28 nC 3.5 nC 5.1 nC FDD6030L Rev E FDD6030L Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IF = 12 A, IS = 2.7 A (Note 2) diF/dt = 100 A/µs 2.7 0.76 A 1.2 V 24 nS 13 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 45°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6030L Rev E FDD6030L Electrical Characteristics FDD6030L Typical Characteristics 100 1.8 6.0V ID, DRAIN CURRENT (A) 80 4.5V 5.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10.0V 4.0V 60 3.5V 40 20 3.0V VGS = 3.5V 1.6 4.0V 1.4 4.5V 5.0V 1.2 6.0V 10.0V 1 0.8 0 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 60 80 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.03 1.6 ID = 12A VGS = 10V ID = 6A RDS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 1.4 1.2 1 0.8 0.6 0.025 0.02 o TA = 125 C 0.015 TA = 25oC 0.01 0.005 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 3. On-Resistance Variation withTemperature 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 1000 90 VGS = 0V 75 IS, REVERSE DRAIN CURRENT (A) TA =-55oC VDS = 5V ID, DRAIN CURRENT (A) 20 3 o 125 C 60 25oC 45 30 15 100 o TA = 125 C 10 25oC 1 -55oC 0.1 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 Figure 5. Transfer Characteristics 4.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6030L Rev. E FDD6035AL Typical Characteristics 10 1800 VGS, GATE-SOURCE VOLTAGE (V) ID = 12 A VDS = 10V 20V 1500 8 Ciss CAPACITANCE (pF) 15V 6 f = 1MHz VGS = 0 V 4 1200 900 600 Coss 2 300 Crss 0 0 0 5 10 15 Qg, GATE CHARGE (nC) 20 0 25 Figure 7. Gate Charge Characteristics 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics 100 100µs RDS(ON) LIMIT 100 P(pk), PEAK TRANSIENT POWER (W) 1000 ID, DRAIN CURRENT (A) 5 1ms 10ms 10 100ms 1s 10 1 DC VGS = 4.5V SINGLE PULSE RθJA = 96oC/W 0.1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 60 40 20 0 0.01 0.1 1 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 9. Maximum Safe Operating Area 10 100 Figure 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 R θJA (t) = r(t) * R θJA R θJA = 96 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 P(pk) 0.01 t1 t2 0.001 0.0001 0.0001 T J - T A = P * R θJA (t) Duty Cycle, D = t 1 / t2 SINGLE PULSE 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6030L Rev E TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5