NTE NTE3222

NTE3222
Optoisolator
NPN Transistor Output
Description:
The NTE3222 is an optically coupled isolator in a 4–Lead DIP type package containing a GaAs light
emitting diode and an NPN silicon phototransistor.
Features:
D High Isolation Voltage
D High Collector–Emitter Voltage
D High Speed Switching
Applications:
D Power Supplies
D Telephone/FAX
D FA/FO Equipment
D Programmable Logic Controller
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Diode
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mA
Power Dissipation (Per Channel) PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5mW/°C
Peak Forward Current (Note 1), IFP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Transistor
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current (Per Channel), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation (Per Channel) PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5mW/°C
Total Device
Isolation Voltage (Note 2), BV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5000Vrms
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse width = 100µs, duty cycle = 1%.
Note 2. AC voltage for 1 minute at TA = +25°C, RH = 60% between input and output.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Diode
Forward Voltage
VF
IF = 10mA
–
1.17
1.40
V
Reverse Current
IR
VR = 5V
–
–
5
µA
Terminal capacitance
Ct
V = 0V, f = 1MHz
–
50
–
pF
ICEO
VCE = 80V, IF = 0mA
–
–
100
nA
CTR
IF = 5mA, VCE = 5V
80
300
600
%
–
–
0.3
V
1011
–
–
Ω
Transistor
Collector–Emitter Dark Current
Coupled
Current Transfer Ratio (IC/IF)
Collector Saturation Voltage
VCE(sat) IF = 10mA, IC = 2mA
Isolation Resistance
RI–O
VI–O = 1kVDC
Isolation Capacitance
CI–O
V = 0V, f = 1MHz
–
0.5
–
pF
VCC = 10V, IC = 2mA, RL = 100Ω
–
3
–
µs
–
5
–
µs
Rise Time
tr
Fall Time
tf
Pin Connection Diagram
Anode
1
4 Collector
Cathode
2
3 Emitter
4
3
.252
(6.4)
1
2
.180 (4.58)
.176
(4.47)
.099 (2.5)
Min
.100 (2.54)
.309
(7.85)