NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions D Guaranteed Switching Speeds Applications: D General Purpose Switching Circuits D Interfacing and Coupling Systems of Different Potentials and Impedances D Regulation Feedback Circuits D Monitor & Detection Circuits D Solid State Relays Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Input LED Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA LED Power Dissipation (With Negligible Power in Output Detector), PD . . . . . . . . . . . . . . . . . 120mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/°C Output Transistor Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Detector Power Dissipation (With Negligible Power in Output Detector), PD . . . . . . . . . . . . . 150mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/°C Total Device Isolation Source Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO . . . . . . . . . . 7500V Total Device Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/°C Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260°C Note 1. Isolation Surge Voltage is an internal device dielectric breakdown rating. For this test, Pin1 and Pin2 are common, and Pin4, Pin5, and Pin6 are common. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IF = 10mA 0.8 1.15 1.5 V IF = 10mA, TA = –55°C 0.9 1.3 1.7 V IF = 10mA, TA = +100°C 0.7 1.05 1.4 V Input LED Forward Voltage VF Reverse Leakage Current IR VR = 6V – – 10 µA Capacitance CJ V = 0, f = 1MHz – 18 – pF VCE = 10V – 1 50 nA VCE = 30V, TA = +100°C – – 500 µA VCB = 10V – 0.2 20 nA VCB = 10V, TA = +100°C – 100 – nA Output Transistor Collector–Emitter Dark Current Collector–Base Dark Current ICEO ICBO Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA 30 45 – V Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA 70 100 – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA 7.0 7.8 – V DC Current Gain hFE IC = 2mA, VCE = 5V – 400 – Collector–Emitter Capacitance CCE VCE = 5V, f = 1MHz – 7 – pF Collector–Base Capacitance CCB VCB = 0, f = 1MHz – 19 – pF Emitter–Base Capacitance CEB VEB = 0, f = 1MHz – 9 – pF IF = 10mA, VCE = 10V 10 30 – mA IF = 10mA, VCE = 10V, TA = –55°C 4 – – mA IF = 10mA, VCE = 10V, TA = +100°C 4 – – mA IC = 0.5mA, IF = 10mA – 0.14 0.3 V IC = 2mA, VCC = 10V, RL = 100Ω – 7.5 10 µs Coupled Output Collector Current Collector–Emitter Saturation Voltage IC VCE(sat) Turn–On Time ton Turn–Off Time toff – 5.7 10 µs Rise Time tr – 3.2 – µs Fall Time tf – 4.7 – µs 7500 – – V – – 100 µA 1011 – – Ω – 0.2 2.0 pF Isolation Voltage VISO f = 60Hz, t = 1sec Isolation Current IISO VI–O = 3550Vpk Isolation Resistance RISO V = 500V Isolation Capacitance CISO V = 0, f = 1MHz Pin Connection Diagram Base Anode 1 6 Cathode 2 5 Collector N.C. 3 4 Emitter 6 1 5 4 2 3 .260 (6.6) Max .070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .085 (2.16) Max .300 (7.62) .350 (8.89) Max .100 (2.45)