Order this document by MRF842/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for 12.5 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM equipment operating in the range of 806 – 960 MHz. • Specified 12.5 Volt, 870 MHz Characteristics Output Power = 20 Watts Power Gain = 6.0 dB Min Efficiency = 50% Min 20 W, 870 MHz RF POWER TRANSISTOR NPN SILICON • Series Equivalent Large–Signal Characterization • Internally Matched Input for Broadband Operation • 100% Tested for Load Mismatch Stress at All Phase Angles with 20:1 VSWR @ 15.5 Volt Supply and 50% RF Overdrive • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Silicon Nitride Passivated CASE 319–07, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 16 Vdc Collector–Base Voltage VCBO 36 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 7.6 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 80 0.64 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 1.5 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 16 — — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 36 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 5.0 mAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 15 Vdc, IE = 0) NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF842 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit hFE 10 — — — Cob — 45 65 pF Common–Base Amplifier Power Gain (Pout = 20 W, VCC = 12.5 Vdc, f = 870 MHz) GPB 6.0 7.0 — dB Collector Efficiency (Pout = 20 W, VCC = 12.5 Vdc, f = 870 MHz) η 50 55 — % Load Mismatch Stress (VCC = 15.5 Vdc, Pin (3) = 6.0 W, f = 870 MHz, VSWR = 20:1, all phase angles) — Characteristic ON CHARACTERISTICS DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS No Degradation in Output Power NOTE: 3. Pin = 150% of the typical input power requirement for 20 W output power @ 12.5 Vdc. L1 L4 C4 B VRE PORT C2 + C10 SOCKET C3 + C12 ÇÇÇÇÇ ÇÇÇ ÇÇÇÇÇ ÇÇÇ ÇÇÇÇÇ ÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇ C7 C5 D.U.T. C1 ÇÇÇÇÇ ÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇ ÇÇÇÇÇ C11 TL2 TL3 C6 B — Ferrite Bead, Ferroxcube 56–590–65–3B C1, C11 — 51 pF, 100 Mil Chip Capacitor C2, C13 — 15 µF, 20 WV Tantalum C3, C12 — 1000 pF Unelco J101 C4, C10 — 91 pF Mini–Underwood C5 — 15 pF Mini–Underwood C6 — 12 pF Mini–Underwood C7, C8 — 21 pF Mini–Underwood C9 — 11 pF Mini–Underwood C13 L3 L2 TL1 +12.5 Vdc B SOCKET C8 TL4 C9 L1, L4 — 11 Turns #20 AWG Over 10 ohm 1/2 W Carbon L2, L3 — 4 Turns #20 AWG, 200 Mil ID TL1, TL4 — Micro Strip, Zo = 50 Ω TL2 — Micro Strip, Zo = 38 Ω, λ/4 @ 838 MHz TL3 — Micro Strip, Zo = 24 Ω, λ/4 @ 838 MHz Board — 0.032″ Glass Teflon Board — 2 oz. Cu CLAD, εr = 2.55 Figure 1. 870 MHz Test Circuit Schematic MRF842 2 MOTOROLA RF DEVICE DATA 28 24 26 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 26 22 20 18 16 14 12 VCC = 12.5 Vdc f = 870 MHz 10 8 6 Pin = 6 W 24 22 20 4W 18 16 14 12 2W 10 1 1.5 2 2.5 3 4 3.5 4.5 5 5.5 8 800 6 820 840 Pin, INPUT POWER (WATTS) 860 VCC = 12.5 V 880 900 f, FREQUENCY (MHz) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 40 Pout , OUTPUT POWER (WATTS) 35 30 Pin = 6 W 25 4W 20 2W 15 10 5 f = 870 MHz 0 6 7 8 9 10 11 12 13 14 15 16 VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA MRF842 3 0 0.5 1.0 1.5 0.5 2.0 Pout = 20 W, VCC = 12.5 Vdc 1.0 2.5 1.5 2.0 870 f = 800 MHz 900 ZOL* 2.5 3.0 f = 800 MHz Zin Ohms ZOL* Ohms 800 836 870 900 1.1 + j4.1 1.2 + j4.3 1.4 + j4.4 1.6 + j4.5 1.9 + j1.5 1.85 + j1.6 1.8 + j1.7 1.8 + j1.8 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. 3.5 836 3.0 f MHz 4.0 3.5 Zin 4.0 4.5 5.0 900 836 870 4.5 5.0 Figure 5. Series Equivalent Input/Output Impedance MRF842 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS Q 2 PL -AL IDENTIFICATION NOTCH 6 5 0.15 (0.006) M T A M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 -N1 2 3 DIM A B C D E F H J K L N Q K F D 2 PL 0.38 (0.015) M B 0.38 (0.015) T A M N M T A M M N M J H C E -T- SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. 6. INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 BASE (COMMON) EMITTER (INPUT) BASE (COMMON) BASE (COMMON) COLLECTOR (OUTPUT) BASE (COMMON) CASE 319–07 ISSUE M MOTOROLA RF DEVICE DATA MRF842 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF842 6 ◊ *MRF842/D* MRF842/D MOTOROLA RF DEVICE DATA