Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. • To be used in Class AB • Specified 26 Volts, 960 MHz Characteristics Output Power — 20 Watts CW Gain — 11 dB Typ Efficiency — 60% Typ 20 W, 960 MHz RF POWER TRANSISTOR NPN SILICON CASE 319–07, STYLE 2 MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 24 Vdc Collector–Emitter Voltage VCES 55 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector–Current — Continuous IC 5.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 45 0.26 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 3.8 °C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) V(BR)CEO 24 30 — Vdc Emitter–Base Breakdown Voltage (IB = 5.0 mAdc, IC =0) V(BR)EBO 4.0 5.0 — Vdc Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) V(BR)CES 55 60 — Vdc ICES — — 6.0 mA OFF CHARACTERISTICS Collector–Cutoff Current (VCE = 30 Vdc, VBE = 0) (1) Thermal resistance is determined under specified RF operating condition. RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF6409 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit hFE 20 35 80 — Cob — 18 — pF Common–Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz) Gpe 10 11 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz) η 50 60 — % Load Mismatch (VCC = 26 Vdc, Pout = 15 W (CW), ICQ = 50 mA, f = 960 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) Ψ ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS No Degradation in Output Power T1 + – C8 5.0 V R2 C7 D2 R3 P1 B2 D1 C6 C9 C11 C10 + 26 V – R1 C3 C5 B1 RF OUTPUT RF INPUT C1 C2 C4 D.U.T. B1, B2 C1 C2, C3 C4 C5 C6, C9 C7, C10 C8 Ferrite Bead 3.3 pF, Chip Capacitor, High Q 4.7 pF, Chip Capacitor, High Q 2.2 pF, Chip Capacitor, High Q 82 pF, Chip Capacitor, High Q 330 pF, Chip Capacitor, High Q 0.1 µF, Chip Capacitor 22 µF, 16 V, Tantalum Capacitor C11 D1, D2 P1 R1 R2 R3 T1 Board 4.7 µF, 50 V, Tantalum Capacitor Diode BAS16 Type or Equivalent 1.0 kΩ, Trimmer 3.3 Ω, Chip Resistor 68 Ω, Chip Resistor 2.2 kΩ, Resistor NPN Transistor Glass Teflon, εr = 2.55, H = 1/50 inch Figure 1. Test Circuit Electrical Schematic MRF6409 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 30 25 10 VCE = 26 V IQ = 50 mA f = 960 MHz 5.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 23 22 21 20 19 18 VCE = 26 V IQ = 50 mA Pin = 1 W 17 16 15 920 2.2 940 950 960 970 f, FREQUENCY (MHz) Figure 2. Output Power versus Input Power (CW) Figure 3. Output Power versus Frequency (CW) 30 13 70% 25 12 60% 11 50% 10 40% 9.0 30% 20 15 10 IQ = 50 mA f = 960 MHz Pin = 1, 6 W 5.0 0 18 20 22 24 IQ = 50 mA f = 960 MHz 8.0 7.0 0 26 VCE, SUPPLY VOLTAGE (VOLTS) 60% 12 11.5 55% 11 10.5 10 50% VCE = 26 V IQ = 50 mA 920 930 940 950 960 45% 970 f, FREQUENCY (MHz) Figure 6. Typical Broadband Performances MOTOROLA RF DEVICE DATA η , COLLECTOR EFFICIENCY (%) 12.5 9.0 910 10 15 20 25 10% 35 30 Figure 5. Power Gain and Efficiency versus Output Power IMD, INTERMODULATION DISTORTION (dBc) 65% 13 9.5 5.0 20% Pout, OUTPUT POWER (WATTS) Figure 4. Output Power versus Supply Voltage (CW) Gp , POWER GAIN (dB) 930 Pin, INPUT POWER (WATTS) η , COLLECTOR EFFICIENCY (%) 15 0 0 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 20 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 24 25 0 VCE = 26 V ICQ = 50 mA f1 = 960 MHz f2 = 960, 1 MHz –10 –20 –30 –40 –50 –60 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power MRF6409 3 f = 980 MHz Zin 920 Zo = 10 Ω 920 f = 980 MHz ZOL* f (MHz) Zin (Ω) ZOL* (Ω) 920 1.4 + j3.0 3.2 – j2.5 940 1.5 + j3.9 3.5 – j1.88 960 1.5 + j4.2 3.9 – j2.5 980 1.6 + j4.4 4.0 – j2.8 ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency. Figure 8. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCC = 26 V, ICQ = 50 mA, Pout = 20 W (CW) MRF6409 4 MOTOROLA RF DEVICE DATA Figure 9. 960 MHz Test Circuit RF, Photomaster Scale 1:1 (Reduced 25% in printed data book, DL110/D) C8 C6 B2 C9 C7 C10 C11 B R2 R1 C3 C5 B1 C1 C2 C4 Figure 10. 960 MHz Test Circuit RF, Photomaster Scale 1:1 and Components Location (Reduced 25% in printed data book, DL110/D) MOTOROLA RF DEVICE DATA MRF6409 5 PACKAGE DIMENSIONS Q 2 PL -AL IDENTIFICATION NOTCH 6 5 0.15 (0.006) M 4 -N1 2 3 K F D 2 PL 0.38 (0.015) M B 0.38 (0.015) T A M N M T A M N M M J C H E -T- SEATING PLANE T A M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F H J K L N Q STYLE 2: PIN 1. 2. 3. 4. 5. 6. INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 EMITTER (COMMON) BASE (INPUT) EMITTER (COMMON) EMITTER (COMMON) COLLECTOR (OUTPUT) EMITTER (COMMON) CASE 319–07 ISSUE M Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 Mfax: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://sps.motorola.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF6409 6 ◊ MRF6409/D MOTOROLA RF DEVICE DATA