Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C) Efficiency = 55% (Typ) 100 W, 30 to 500 MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON • Built–In Input Impedance Matching Networks for Broadband Operation • Push–Pull Configuration Reduces Even Numbered Harmonics • Gold Metallization System for High Reliability • 100% Tested for Load Mismatch • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. 2 6 5, 8 1, 4 7 3 CASE 744A–01, STYLE 1 The MRF393 is two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push–pull configuration. PUSH–PULL TRANSISTORS MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 30 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 16 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 270 1.54 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 0.65 °C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE: 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull amplifier. REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF393 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 30 — — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 5.0 mAdc hFE 20 — 100 — Cob 40 75 95 pF Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 100 W, f = 500 MHz) Gpe 7.5 8.5 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 100 W, f = 500 MHz) η 50 55 — % Load Mismatch (VCC = 28 Vdc, Pout = 100 W, f = 500 MHz, VSWR = 30:1, all phase angles) ψ OFF CHARACTERISTICS (1) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS (1) Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (2) — See Figure 1 No Degradation in Output Power NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push–pull amplifier. L5 C10 C9 B1 + 28 V B2 L3 L1 C12 C11 C7 C1 Z3 Z5 Z1 C3 C5 C4 C6 Z2 Z4 C2 L2 Z6 C8 D.U.T. L4 L6 C14 C13 C1, C2, C7, C8 — 240 pF 100 mil Chip Cap C3 — 15 pF 100 mil Chip Cap C4 — 24 pF 100 mil Chip Cap C5 — 33 pF 100 mil Chip Cap C6 — 12 pF 100 mil Chip Cap C9, C13 — 1000 pF 100 mil Chip Cap C10, C14 — 680 pF Feedthru Cap C11, C15 — 0.1 µF Ceramic Disc Cap C12, C16 — 50 µF 50 V C15 C16 L1, L2 — 0.15 µH Molded Choke with Ferrite Bead L3, L4 — 2–1/2 Turns #20 AWG 0.200″ ID L5, L6 — 3–1/2 Turns #18 AWG 0.200″ ID B1, B2 — Balun 50 Ω Semi Rigid Coax, 86 mil OD, 4″ Long Z1, Z2 — 850 mil Long x 125 mil W. Microstrip Z3, Z4 — 200 mil Long x 125 mil W. Microstrip Z5, Z6 — 800 mil Long x 125 mil W. Microstrip Board Material — 0.0325″ Teflon–Fiberglass, εr = 2.56, Board Material — 1 oz. Copper Clad both sides. Figure 1. 500 MHz Test Fixture MRF393 2 MOTOROLA RF DEVICE DATA CLASS C 80 225 MHz 140 400 MHz 120 500 MHz 100 80 60 40 20 0 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) f = 100 MHz 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) 16 60 50 500 MHz 40 30 20 10 VCC = 28 V 0 225 MHz 400 MHz f = 100 MHz 70 18 0 20 VCC = 13.5 V 0 Figure 2. Output Power versus Input Power 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) 16 18 20 Figure 3. Output Power versus Input Power CLASS C 120 120 Pin = 16 W 8W 100 6W 80 60 40 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Pin = 10 W 100 12 W 80 8W 60 40 f = 225 MHz 20 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) f = 500 MHz 20 28 12 Figure 4. Output Power versus Supply Voltage f = 100 MHz ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a 2 ZOL* = given output power, voltage and frequency. 4 225 2 400 Zin 4 ZOL* 225 6 500 500 6 Zo = 20 Ω f = 100 MHz 8 8 400 VCC = 28 V, Pout = 100 W f MHz Zin ZOL* 100 225 400 500 0.85 + j0 0.58 + j2.6 3.00 + j5.9 4.80 + j3.0 7.8 – j5.6 5.0 – j3.2 3.2 – j0.6 2.9 + j1.2 140 120 100 80 60 40 Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA f = 500 MHz VCC = 28 V ICQ = 200 mA 20 0 NOTE: Zin & ZOL* are given from base–to–base NOTE: and collector–to–collector respectively. 28 Figure 5. Output Power versus Supply Voltage Pout , OUTPUT POWER (WATTS) 2 4 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 0 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) 16 18 20 Figure 7. Class AB Output Power versus Input Power MRF393 3 PACKAGE DIMENSIONS U M Q 0.76 (0.030) M A M 4 PL B M 1 2 3 K 4 R DIM A B C D E F G H J K L M N Q R U V –B– 5 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 6 7 K 8 4 PL F V 4 PL 2 PL L G –A– J STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. N C H E –T– MILLIMETERS MIN MAX 22.60 23.11 9.52 10.03 6.65 7.16 1.60 1.95 2.94 3.40 2.87 3.22 16.51 BSC 4.01 4.36 0.07 0.15 4.34 4.90 12.45 12.95 45_NOM 1.051 11.02 3.04 3.35 9.90 10.41 1.02 1.27 0.64 0.89 INCHES MIN MAX 0.890 0.910 0.375 0.395 0.262 0.282 0.063 0.077 0.116 0.134 0.113 0.127 0.650 BSC 0.158 0.172 0.003 0.006 0.171 0.193 0.490 0.510 45_NOM 0.414 0.434 0.120 0.132 0.390 0.410 0.040 0.050 0.025 0.035 EMITTER (COMMON) COLLECTOR COLLECTOR EMITTER (COMMON) EMITTER (COMMON) BASE BASE EMITTER (COMMON) SEATING PLANE CASE 744A–01 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF393 4 ◊ *MRF393/D* MRF393/D MOTOROLA RF DEVICE DATA