PD- 93897C
IRF7452
SMPS MOSFET
HEXFET® Power MOSFET
Applications
High frequency DC-DC converters
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
VDSS
RDS(on) max
ID
100V
0.060Ω
4.5A
1
8
S
2
7
S
3
6
4
5
S
G
A
A
D
D
D
D
SO-8
Top View
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
4.5
3.6
36
2.5
0.02
± 30
3.5
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Typical SMPS Topologies
Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input
with Passive Reset Forward Converter Primary
Notes through are on page 8
www.irf.com
1
11/23/01
IRF7452
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
100
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA 0.060 Ω
VGS = 10V, ID = 2.7A 5.5
V
VDS = VGS, ID = 250µA
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 24V
nA
-100
VGS = -24V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
3.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
33
7.3
16
9.5
11
16
13
930
300
84
1370
170
280
Max. Units
Conditions
–––
S
VDS = 50V, ID = 2.7A
50
ID = 2.7A
11
nC
VDS = 80V
24
VGS = 10V, –––
VDD = 50V
–––
ID = 2.7A
ns
–––
RG = 6.0Ω
–––
VGS = 10V –––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 80V Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
200
4.5
0.25
mJ
A
mJ
Typ.
Max.
Units
–––
50
°C/W
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.3
–––
–––
36
–––
–––
–––
–––
77
270
1.3
120
410
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.7A, VGS = 0V
TJ = 25°C, IF = 2.7A
di/dt = 100A/µs D
S
www.irf.com
IRF7452
100
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
10
1
0.1
5.0V
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 ° C
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
10
100
Fig 2. Typical Output Characteristics
2.5
7.0
1
VDS , Drain-to-Source Voltage (V)
100
6.0
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
Fig 1. Typical Output Characteristics
0.1
5.0
5.0V
1
VDS , Drain-to-Source Voltage (V)
10
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
8.0
ID = 4.5A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7452
20
VGS = 0V,
f = 1 MHZ
C iss
= C gs + Cgd ,
SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Ciss
1000
Coss
100
Crss
ID = 2.7A
VDS = 80V
VDS = 50V
VDS = 20V
16
12
8
4
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
0
100
20
30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
100
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
0.6
0.8
1.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
10us
10
100us
1ms
1
V GS = 0 V
0.4
VSD ,Source-to-Drain Voltage (V)
4
10
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
C ds
VGS , Gate-to-Source Voltage (V)
100000
1.2
0.1
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF7452
5.0
VDS
VGS
ID , Drain Current (A)
4.0
RD
D.U.T.
RG
+
-VDD
3.0
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7452
RDS(on) , Drain-to -Source On Resistance ( Ω )
RDS (on) , Drain-to-Source On Resistance ( Ω )
0.06
VGS = 10V
0.05
VGS = 15V
0.04
0
4
8
12
16
0.08
0.07
0.06
ID = 2.7A
0.05
0.04
7.0
20
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
500
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
400
BOTTOM
ID
2.0A
3.6A
4.5A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
IRF7452
SO-8 Package Details
DIM
D
-B-
5
8
E
-A-
1
7
2
5
A
6
3
e
6X
5
H
0.25 (.010)
4
M
A M
θ
e1
K x 45°
-C-
0.10 (.004)
B 8X
0.25 (.010)
A1
L
8X
6
C
8X
M C A S B S
MIN
MAX
.0532
.0688
1.35
1.75
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
e1
A
MILLIMETERS
MAX
A1
e
θ
INCHES
MIN
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
K
.011
.019
0.28
5.80
0.48
6.20
L
0.16
.050
0.41
1.27
θ
0°
8°
0°
8°
RECOMMENDED FOOTPRINT
NOTES:
1.
2.
3.
4.
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
CONTROLLING DIMENSION : INCH.
DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.070)
8X
1.27 ( .050 )
3X
SO-8 Part Marking
www.irf.com
7
IRF7452
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 20mH
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
RG = 25Ω, IAS = 4.5A.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 11/01
8
www.irf.com