SANKEN 2SD2558

Equivalent circuit
2SD2558
Silicon NPN Triple Diffused Planar Transistor
ICBO
VCB=200V
100max
µA
VCEO
200
V
IEBO
VEB=6V
5max
mA
VEBO
6
V
V(BR)CEO
IC
5
A
hFE
IC=10mA
200min
VCE=5V, IC=1A
1500 to 6500
Unit
VCE(sat)
IC=1A, IB=5mA
1.5max
V
W
fT
VCE=10V, IE=–0.5A
15typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
110typ
pF
–55 to +150
ø3.3±0.2
a
b
1.75
°C
1.05 +0.2
-0.1
5.45±0.1
1.5
4.4
B
I C – V CE Characteristics (Typical)
V CE ( sat ) – I B Characteristics (Typical)
1.5
C
0.65 +0.2
-0.1
Weight : Approx 6.5g
a. Type No.
b. Lot No.
E
(V C E =4V)
5
mA
A
1
12
1
0
2
4
0
6
0
p)
1
Collector-Emitter Voltage V C E (V)
2
2.5
Base-Emittor Voltage V B E (V)
(V C E =5V)
DC C urrent G ain h FE
8000
5000
˚C
125
C
25˚
1000
500
–30
˚C
100
50
10
5
0.02
0.1
0.5
1
5
θ j-a – t Characteristics
θ j - a (˚ C/W)
h FE – I C Temperature Characteristics (Typical)
5.0
Transient Thermal Resistance
h FE – I C Characteristics (Typical)
ase Tem
0 .3 m
2
–30˚C (C
A
em
p)
mp)
0 .6 m
3
eT
A
e Te
2
1 .2 m
as
3
4
mA
(Cas
2.5
(C
10
4
25˚C
50
mA
5˚C
A
Collector Current I C (A)
A
I B = 1 .0
2
m
50
3.35
I C – V BE Temperature Characteristics (Typical)
5
1.0
0.5
0.3
1
5
10
f T – I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
60
30
s
fin
ite
he
at
si
nk
Without Heatsink
Natural Cooling
40
In
1
0.5
ith
5
W
Maxim um Power Dissip ation P C (W)
1m
10
20
0.1
0.05
5
500 1000 2000
50 100
Time t(ms)
Collector Current I C (A)
Collector Curre nt I C ( A)
Collector Current I C (A)
0.8
2.15
5.45±0.1
0
3.45 ±0.2
3.0
A
60(Tc=25°C)
5.5±0.2
3.3
2
PC
Tstg
15.6±0.2
V
IB
0.8±0.2
Conditions
V
5.5
Unit
200
1.6
2SD2558
VCBO
Symbol
External Dimensions FM100(TO3PF)
(Ta=25°C)
9.5±0.2
■Electrical Characteristics
2SD2558
Symbol
E
Application : Series Regulator and General Purpose
23.0±0.3
■Absolute maximum ratings (Ta=25°C)
(7 0 Ω )
16.2
Darlington
C
B
Without Heatsink
10
50
100
Collector-Emitter Voltage V C E (V)
300
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
157