Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band • Gate protection diode built-in 0.9±0.1 3 ■ Features 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Drain-source voltage VDS 50 V Gate-source voltage (Drain open) VGSO ±7 V Drain current ID 100 mA Peak drain current IDP 200 mA Power dissipation PD 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 Parameter 2.0±0.2 10˚ 1: Gate 2: Source 3: Drain EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 5F ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max ID = 10 µA, VGS = 0 Drain-source cutoff current IDSS VDS = 50 V, VGS = 0 1.0 µA Gate-Source cutoff current IGSS VGS = ±7 V, VDS = 0 ±5.0 µA Vth ID = 1.0 µA, VDS = 3 V Gate threshold voltage 50 Unit VDSS Drain-source surrender voltage 0.9 Drain-source ON resistance RDS(on) ID = 10 mA, VGS = 2.5 V Forward trancfer admitance Yfs ID = 10 mA, VDS = 3 V, f = 1 kHz ID = 10 mA, VGS = 4.0 V 20 VDS = 3 V, VGS = 0, f = 1 MHz V 1.2 1.5 V 8 15 Ω 6 12 60 mS 12 pF Short-circuit forward transfer capacitance (Common source) Ciss Short-circuit output capacitance (Common source) Coss 7 pF Reverse transfer capacitance (Common source) Crss 3 pF * ton VDD = 3 V, VGS = 0 V to 3 V, RL = 470 Ω 200 ns Turn-off time * toff VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Ω 200 ns Turn-on time 100 µF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: ton , toff test circuit VOUT 470 Ω 90% 10% VIN VGS = 3.0 V VDD = 3 V VOUT 10% 50 Ω 90% ton Publication date: January 2004 SJF00035BED toff 1 2SK3539 PD Ta ID VDS 160 VGS = 2.0 V ID VGS 250 Ta = 25°C VDS = 3 V 40 Drain current ID (mA) 80 1.9 V 1.8 V 40 1.7 V 20 1.6 V 40 80 120 0 160 4 Yfs VGS Drain-source ON resistance RDS(on) (Ω) VDS = 3 V f = 1 MHz Ta = 25°C 0.12 0.08 0.04 0 1.0 1.5 2.0 2.5 Gate-source voltage VGS (V) 3.0 3 VIN IO ID = 10 mA VO = 5 V TC = 25°C 50 40 30 20 25°C 1 Ta = 75°C 10 10−1 0 0.5 2 10 −25°C 0 1 Gate-source voltage VGS (V) RDS(on) VGS 60 Forward trancfer admitance Yfs (mS) 0 Drain-source voltage VDS (V) Ambient temperature Ta (°C) 0.16 100 8 Input voltage VIN (V) 0 75°C 150 0 0 0 25°C 50 1.5 V 2 Ta = −25°C 200 120 Drain current ID (mA) Power dissipation PD (mW) 60 0 2 4 Gate-source voltage VGS (V) SJF00035BED 6 1 10 102 Output current IO (mA) 103 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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