ETC 2N4416CSM

2N4416CSMA
2N4416ACSM
SMALL SIGNAL
N–CHANNEL J–FET IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
MECHANICAL DATA
Dimensions in mm (inches)
0.31 rad.
(0.012)
FEATURES
3
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
0.76 ± 0.15
(0.03 ± 0.006)
2.54 ± 0.13
(0.10 ± 0.005)
0.51 ± 0.10
(0.02 ± 0.004)
• CECC SCREENING OPTIONS
A
0.31 rad.
(0.012)
• SPACE QUALITY LEVEL OPTIONS
1.40
(0.055)
max.
A = 1.02 ± 0.10
(0.04 ± 0.004)
APPLICATIONS:
The 2N4416 and 2N4416A are N-Channel
JFETs designed to provide high-performance
amplification, especially at high-frequency.
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 1 – Source PAD 2 – Drain
PAD 3 – Gate
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25°C unless otherwise stated)
VGD
VGS
IG
PD
Tj
Tstg
Semelab plc.
Gate – Drain Voltage
Gate – Source Voltage
Gate Current
Power Dissipation
Derate
Operating Junction Temperature Range
Storage Temperature Range
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
2N4416
–30V
–30V
2N4416A
–35V
–35V
10mA
300mW
1.7mW / °C
–55 to 150°C
–55 to 150°C
Prelim. 7/99
2N4416CSMA
2N4416ACSM
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
2N4416
–30
–36
2N4416A
–35
–36
Max. Unit
STATIC CHARACTERISTICS
V(BR)GSS Gate – Source Breakdown Voltage
VDS = 0V
IG = –1mA
VDS = 15V
2N4416
ID = 1nA
2N4416A
V
–3
–6
–2.5
–3
–6
5
10
15
mA
VGSS(off)
Gate – Source Cut–off Voltage
IDSS*
Saturation Current
VDS = 15V
VGS = 0V
IGSS
Gate Reverse Current
VGS = –20
VDS = 0V
–2
–100
pA
Tamb = 125°C
–4
–100
nA
IG
Gate Operating Current
VDG = 10V
ID = 1mA
–20
ID(off)
Drain Cut–off Current
VDS = 10V
VGS = –10V
VGS(F)
Gate – Source Forward Voltage
IG = 1mA
VDS = 0V
0.7
RDS(on)
Drain – Source On Resistance
VGS = 0V
ID = 1mA
150
Transconductance
VDS = 15V
VGS = 0V
Common – Source Output
f = 1kHz
pA
2
V
W
DYNAMIC CHARACTERISTICS
gfs
gos
Common – Source Forward
Transconductance
Ciss
Crss
Coss
_
en
Common – Source Input Capacitance
Common – Source Reverse Transfer
VDS = 15V
Capacitance
f = 1MHz
VGS = 0V
Common – Source Output
Capacitance
Equivalent Input Noise Voltage
VDS = 10V
VGS = 0V
f = 1kHz
4.5
6
7.5
ms
15
50
ms
2.2
4
0.7
0.8
1
2
6
pF
nV
ÖHz
Pulse Test; PW = 300ms, Duty Cycle # 3%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 7/99