Databook.fxp 1/13/99 2:09 PM Page F-10 F-10 01/99 NJ26A Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D Devices in this Databook based on the NJ26A Process. S-D Datasheet 2N4416, 2N4416A G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. At 25°C free air temperature: NJ26A Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 30 – 40 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV – 100 pA VGS = – 20V, VDS = ØV 2 22 mA VDS = 15V, VGS = ØV –1 –5 V VDS = 15V, ID = 1 nA mS VDS = 15V, VGS = ØV f = 1 kHz – 10 Dynamic Electrical Characteristics Forward Transconductance gfs 6 Input Capacitance Ciss 4 4.5 pF VDS = 15V, VGS = ØV f = 1 MHz Feedback Capacitance Crss 1 1.2 pF VDS = 15V, VGS = ØV f = 1 MHz Equivalent Noise Voltage e¯ N 4 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 nV/√HZ VDS = 10V, ID = 5 mA f = 1 kHz www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-11 F-11 01/99 NJ26A Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð2.1 V 10 10 Transconductance in mS Drain Current in mA VGS = Ø V 8 VGS = – 0.5 V 6 VGS = –1.0 V 4 VGS = –1.5 V 2 VGS = –2.0 V 5 10 15 4 2 0 –1 –2 –3 –4 –5 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) IDSS as a Function of RDS 25 20 15 10 5 0 –1 –2 –3 –4 –5 –6 –6 20 16 12 8 4 100 150 200 250 Gate Source Cutoff Voltage in Volts Drain Source (ON) Resistance in Ω Input Capacitance as a Function of VGS Feedback Capacitance as a Function of VGS 300 2.5 Feedback Capacitance in pF 5 Input Capacitance in pF 6 20 Drain Saturation Current in mA Drain Saturation Current in mA 0 8 VDS = Ø V 4 VDS = 15 V 3 2 1 0 –4 –8 – 12 Gate Source Voltage in Volts – 16 VDS = Ø V 2.0 VDS = 5 V 1.5 1.0 0.5 0 –4 –8 – 12 Gate Source Voltage in Volts – 16