2N7085 MECHANICAL DATA Dimensions in mm(inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL ENHANCEMENT MODE TRANSISTOR V(BR)DSS ID(A) RDS(on) 12.07 (0.500) 19.05 (0.750) 1 2 3 100V 20A 0.075W 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC TO–257AB Metal Package FEATURES • TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS • SCREENING OPTIONS AVAILBLE Pin 1 – Gate Pin 2 – Drain Pin 3 – Source • SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain – Source Voltage 100V VGS Gate – Source Voltage ±20V ID Continuous Drain Current (TJ = 150°C) IDM Pulsed Drain Current PD Power Dissipation TC = 25°C 20A TC = 100°C 12A 80A TC = 25°C 60W TC = 100°C 20W TJ , Tstg Operating Junction and Storage Temperature Range TL Lead Temperature (1/16” from case for 10 sec.) Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk –55 to 150°C 300°C Prelim. 7/99 2N7085 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Test Conditions Min. STATIC ELECTRICAL RATINGS V(BR)DSS Drain–Source Breakdown Voltage VGS = 0 ID = 250µA 100 VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 2 IGSS Gate – Body Leakage VDS = 0 VGS = ±20V IDSS Zero Gate Voltage Drain Current ID(on) rDS(on) gfs On–State Drain Current1 VDS = 10V VGS = 10V Drain – Source On–State VGS = 10V Forward Transconductance1 ID = 12A TJ = 125°C VDS = 15V IDS = 12A V ±100 nA 250 20 5.0 Unit 4 25 TJ = 125°C Resistance Max. V VDS = 80V VGS = 0 1 Typ. µA A 0.06 0.075 0.11 0.14 8.0 W S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 1400 Coss Output Capacitance VDS = 25V 480 Crss Reverse Transfer Capacitance f = 1MHz 110 Qg Qgs Qgd td(on) tr Total Gate Charge2 Gate Source Gate Drain Charge2 Charge2 Turn–On Delay Rise Time2 Time2 td(off) Turn–Off Delay tf Fall Time2 VDS = 0.5 x V(BR)DSS50V VGS = 10V ID = 20A VDD = 50V ID = 20A VGEN =10V Time2 RL = 2.5W RG = 4.7W pF 35 50 10 20 18 25 13 30 85 120 35 80 75 95 nC ns SOURCE – DRAIN DIODE CHARACTERISTICS IS Continuous Current 20 ISM Pulsed Current 80 VSD Diode Forward Voltage1 IF = 20A trr Reverse Recovery Time IF = 20A 150 Qrr Reverse Recovery Charge di/dt = 100A/µs 0.5 1 Pulse VGS = 0 A 2.5 V 400 ns µC test : Pulse Width < 300ms ,Duty Cycle < 2% of Operating Temperature 2 Independent THERMAL RESISTANCECHARACTERISTICS Parameter Min. Typ. Max. RthJC Thermal resistance Junction-Case 2.1 RthJA Thermal resistance Junction-ambient 80 RthCS Thermal resistance Case to Sink Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Unit °C/W 1.0 Prelim. 7/99