STB3015L STP3015L N-CHANNEL 30V - 0.013 Ω - 40A D2PAK/TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE STB3015L STP3015L ■ ■ ■ ■ ■ VDSS R DS(on) ID 30 V 30 V <0.0155 Ω <0.0155 Ω 40 A 40 A TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE A 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 D2PAK TO-263 (suffix“T4”) 1 2 3 TO-220 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, etc.) ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR VGS ID ID IDM(•) Ptot Parameter Value Unit 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V Gate- source Voltage ±20 V Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C 40 A 28 A Drain Current (pulsed) 160 A Drain-source Voltage (VGS = 0) Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area 80 W 0.53 W/°C 7 V/ns –65 to 175 °C 175 °C (1)ISD [ 40 A, di/dt m200A/ms, VDD [ V(BR)DSS, Tj [ TJMA November 2000 This is preliminary data new product in development or undergoing evaluation. Details are subject to change without notice. 1/7 STB3015L/STP3015L THERMAL DATA R thj-case R thj-amb Rthc-sink Tj Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose 1.88 62.5 0.5 300 °C/W °C/W °C/W °C Max Value Unit Max Max Typ AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 40 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 15 V) 200 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V V(BR)DSS VGS = 0 Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA Max. Unit 2.5 V 0.0155 0.022 Ω Ω ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA R DS(on) Static Drain-source On Resistance VGS = 10 V VGS = 5 V ID = 20 A I D = 20 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V Min. Typ. 1 0.013 40 A DYNAMIC Symbol gfs (*) C iss Coss Crss 2/7 Parameter Test Conditions Forward Transconductance VDS > ID(on) x R DS(on)max ID=20 A Input Capacitance Output Capacitance Reverse Transfer Capacitances VDS = 25V f = 1 MHz VGS = 0 Min. Typ. 15 20 Max. Unit S 2500 1200 400 pF pF pF STB3015L/STP3015L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Parameter Test Conditions Turn-on Delay Time Rise Time VDD = 15 V ID = 20 A RG = 4.7 Ω VGS = 5 V (see test circuit, Figure 3) Total Gate Charge VDD= 24 V ID= 40 A VGS=5 V Min. Typ. Max. 25 160 Unit ns ns 40 nC Max. Unit SWITCHING OFF Symbol td(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. Vclamp = 24 V ID = 40 A RG = 4.7 Ω VGS = 5 V (see test circuit, Figure 5) Typ. 25 120 155 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM(•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD =40 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =40 A di/dt = 100 A/µs VDD = 20 V Tj = 150 °C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. V GS = 0 50 0.9 3.5 Max. Unit 40 160 A A 1.5 V ns nC A (*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limit ed by safe operating area. . . 3/7 STB3015L/STP3015L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 STB3015L/STP3015L D2PAK MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. A 4.4 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 10.4 0.393 4.88 5.28 0.192 0.208 E1 G 0.368 0.315 8.5 0.334 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R V2 0.4 0º 0.015 8º 5/7 STB3015L/STP3015L TO-220 MECHANICAL DATA DIM. mm. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 TYP. MAX. 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.65 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 6/7 TYP inch 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 STB3015L/STP3015L Information furnished is believed to be accurate and reliable. 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