PE3 0.5µm MESFET Process V4 GaAs MESFET Foundry Service GaAs MESFET Foundry Service Introduction M/A-COM’s PE3 process utilizes molecular beam epitaxy (MBE) to implement a MESFET active layer structure that achieves high breakdown and high efficiency for multi-watt power applications thru 18 GHz. Wafer diameter is 100 mm. The focus is on products for moderate to high volume applications. M/A-COM offers a full compliment of foundry services to meet the requirements for custom designing a MMIC-based die or packaged product. Performance Summary Param. Test Conditions Freq. Typ. Val. MAG VDS = 8V, IDS = 40% IDSS 2 / 12 GHz 22 dB / 13.5dB P@1dBc VDS = 8V, IDS = 40% IDSS 2 / 12 GHz 680 mW/mm / 525 mW/mm PAE VDS = 8V, IDS = 40% IDSS 2 / 12 GHz 50% / 41% Ft VDS = 8V, IDS = 40% IDSS ------ 20 GHz MTTF VDS = 9.5 V, IDS = 50% IDSS, Tch = 125 oC ------ 3 X 106 hours Electrical Specifications: TA = + 25 oC Parameter Test Conditions Units Min. Typ. Max. IDSS VDS = 3V, VGS = 0V mA/mm 190 240 270 DC GM VDS = 3V, IDS = 50% IDSS mS/mm 145 150 185 Vp VDS = 3V, IDS = 2.5% IDSS V -1.3 -1.8 -2.2 BVgd IG = 1.0 mA/mm V -11 -15 - Ft VDS = 3V, IDS = 50% IDSS GHz 20 26 34 NDRS (N- GaAs) l = 20 mA Ohm/sq 340 375 410 NCRS (NiCr) l = 10 mA Ohm/sq 40 50 60 Capacitance/unit area f = 1MHz pF/mm2 360 400 440 Capacitor Leakage V = 10 V µA - - 0.5 200 µm PCM FET Sheet Resistances MIM Capacitors Applications • • • High power amplifiers and driver amplifiers for applications up to 18 GHz VSAT power amplifiers High efficiency power amplifiers M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 PE3 0.5µm MESFET Process V4 GaAs MESFET Foundry Service GaAs MESFET Foundry Service Benefits of Using M/A-COM as a Foundry Service: • • • • • • Over 17 years of GaAs MMIC production experience A complete offering of stable and mature GaAs production processes for commercial handset, infrastructure, and military applications Superior device performance to meet the most stringent specifications World-class testing and modeling capabilities Shortest production cycle time in the industry Proven manufacturer of microwave components and systems for more than 50 years M/A-COM Foundry Services Include: • • Support in: • Layout • DRC and LVS checking • Technical consultation Provide design kit including transistor models and passive models to assist design Upon Request, Services Available to Foundry Customer: • • • • Extract small signal, noise, and large signal models Provide transistor characterization data in: • Small signal measurements • Load pull measurements Perform circuit test at: • Wafer level • Package level Production qualification testing M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020