CY7C135 CY7C1342 4K x 8 Dual-Port Static RAM and 4K x 8 Dual-Port SRAM with Semaphores Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 4K x 8 organization • 0.65-micron CMOS for optimum speed/power • High-speed access: 15 ns • Low operating power: ICC = 160 mA (max.) • Fully asynchronous operation • Automatic power-down • Semaphores included on the 7C1342 to permit software handshaking between ports • Available in 52-pin PLCC • Pb-Free packages available The CY7C135 and CY7C1342 are high-speed CMOS 4K x 8 dual-port static RAMs. The CY7C1342 includes semaphores that provide a means to allocate portions of the dual-port RAM or any shared resource. Two ports are provided permitting independent, asynchronous access for reads and writes to any location in memory. Application areas include interprocessor/multiprocessor designs, communications status buffering, and dual-port video/graphics memory. Each port has independent control pins: chip enable (CE), read or write enable (R/W), and output enable (OE). The CY7C135 is suited for those systems that do not require on-chip arbitration or are intolerant of wait states. Therefore, the user must be aware that simultaneous access to a location is possible. Semaphores are offered on the CY7C1342 to assist in arbitrating between ports. The semaphore logic is comprised of eight shared latches. Only one side can control the latch (semaphore) at any time. Control of a semaphore indicates that a shared resource is in use. An automatic power-down feature is controlled independently on each port by a chip enable (CE) pin or SEM pin (CY7C1342 only). The CY7C135 and CY7C1342 are available in 52-pin PLCC. Logic Block Diagram R/WL R/WR CEL OEL CER OER I/O7L I/O CONTROL I/O0L I/O7R I/O CONTROL I/O0R A11L A0L ADDRESS DECODER SEMAPHORE ARBITRATION (7C1342 only) CEL OEL A0R CER OER R/WL R/WR (7C1342 only) (7C1342 only) SEML Cypress Semiconductor Corporation Document #: 38-06038 Rev. *C A11R ADDRESS DECODER MEMORY ARRAY SEMR • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised September 6, 2005 CY7C135 CY7C1342 Selection Guide Maximum Access Time Maximum Operating Current Maximum Standby Current for ISB1 Commercial 7C135-15 7C1342-15 15 220 7C135-20 7C1342-20 20 190 7C135-25 7C1342-25 25 180 7C135-35 7C1342-35 35 160 7C135-55 7C1342-55 55 160 Unit ns mA Commercial 60 50 40 30 30 mA Pin Configurations 7 6 5 4 3 2 1 52 51 50 49 48 47 46 45 44 43 42 41 7C135 40 39 38 37 36 35 34 21 22 23 24 25 26 27 28 29 30 31 32 33 OER A0R A1R A2R A3R A4R A5R A6R A7R A8R A9R NC I/O7R NC GND I/O0R I/O1R I/O2R I/O3R I/O4R I/O5R I/O6R 8 9 10 11 12 13 14 15 16 17 18 19 20 I/O4L I/O5L I/O6L I/O7L A1L A2L A3L A4L A5L A6L A7L A8L A9L I/O0L I/O1L I/O2L I/O3L CER R/WR N/C A11R A10R A0L OEL A10L A11L N/C R/W L CEL VCC PLCC Top View 7 6 5 4 3 2 1 52 51 50 49 48 47 46 45 44 43 42 41 7C1342 40 39 38 37 36 35 34 21 22 23 24 25 26 27 28 29 30 31 32 33 OER A0R A1R A2R A3R A4R A5R A6R A7R A8R A9R NC I/O7R NC GND I/O0R I/O1R I/O2R I/O3R I/O4R I/O5R I/O6R 8 9 10 11 12 13 14 15 16 17 18 19 20 I/O4L I/O5L I/O6L I/O7L A1L A2L A3L A4L A5L A6L A7L A8L A9L I/O0L I/O1L I/O2L I/O3L SEMR A11R A10R A0L OEL A10L A11L SEM L R/W L CEL VCC CER R/WR PLCC Top View Pin Definitions Left Port Right Port Description A0L–11L A0R–11R Address Lines CEL CER Chip Enable OEL OER Output Enable R/WL R/WR Read/Write Enable SEMR Semaphore Enable. When asserted LOW, allows access to eight semaphores. The three SEML (CY7C1342 only) (CY7C1342 only) least significant bits of the address lines will determine which semaphore to write or read. The I/O0 pin is used when writing to a semaphore. Semaphores are requested by writing a 0 into the respective location. Document #: 38-06038 Rev. *C Page 2 of 12 CY7C135 CY7C1342 Maximum Ratings[1] Storage Temperature ..................................–65°C to+150°C Ambient Temperature with Power Applied..............................................–55°C to+125°C Static Discharge Voltage........................................... > 2001V (per MIL-STD-883, Method 3015) Latch-Up Current .................................................... > 200 mA Operating Range Supply Voltage to Ground Potential (Pin 48 to Pin 24) ............................................ –0.5V to+7.0V DC Voltage Applied to Outputs in High Z State ................................................ –0.5V to+7.0V Ambient Temperature Range VCC Commercial 0°C to +70°C 5V ± 10% Industrial –40°C to +85°C 5V ± 10% DC Input Voltage[2] ......................................... –3.0V to +7.0V Electrical Characteristics Over the Operating Range 7C135-15 7C1342-15 Parameter Description Test Conditions VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA VCC = Min., IOL = 4.0 mA 7C135-20 7C1342-20 Min. Max. Min. Max. Min. Max. Unit 2.4 2.4 0.4 2.4 VOL Output LOW Voltage VIH Input HIGH Voltage VIL Input LOW Voltage IIX Input Load Current GND ≤ VI ≤ VCC –10 +10 –10 +10 IOZ Output Leakage Current Outputs Disabled, GND ≤ VO ≤ VCC –10 +10 –10 +10 ICC Operating Current VCC = Max., IOUT = 0 mA Com’l ISB1 Standby Current (Both Ports TTL Levels) CEL and CER ≥ VIH, f = fMAX[3] Com’l ISB2 Standby Current (One Port TTL Level) CEL and CER ≥ VIH, f = fMAX[3] Com’l ISB3 Standby Current Both Ports CE and CER ≥ (Both Ports CMOS Levels) VCC – 0.2V, VIN ≥ VCC – 0.2V or VIN ≤ 0.2V, f = 0[3] Com’l Standby Current (One Port CMOS Level) Com’l ISB4 2.2 0.4 2.2 0.8 One Port CEL or CER ≥ VCC – 0.2V, VIN ≥VCC – 0.2V or VIN ≤ 0.2V, Active Port Outputs, f = fMAX[3] 7C135-25 7C1342-25 0.4 2.2 0.8 220 190 60 50 Ind. V V 0.8 V –10 +10 µA –10 +10 µA 180 mA 190 Ind. 40 mA 50 130 120 15 15 Ind. 110 mA 120 Ind. Ind. V 15 mA 30 125 115 100 mA 115 Notes: 1. The Voltage on any input or I/O pin cannot exceed the power pin during power-up. 2. Pulse width < 20 ns. 3. fMAX = 1/tRC = All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby ISB3. Document #: 38-06038 Rev. *C Page 3 of 12 CY7C135 CY7C1342 Electrical Characteristics Over the Operating Range (continued) Parameter Description Test Conditions VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA VOL Output LOW Voltage VCC = Min., IOL = 4.0 mA 7C135-35 7C1342-35 7C135-55 7C1342-55 Min. Min. Max. 2.4 2.4 0.4 2.2 VIH Input LOW Voltage IIX Input Load Current IOZ Output Leakage Current Outputs Disabled, GND ≤ VO ≤ VCC ICC Operating Current VCC = Max., IOUT = 0 mA Com’l 160 VCC = Max., IOUT = 0 mA µA –10 +10 –10 +10 –10 +10 –10 +10 µA 160 mA 180 Com’l 30 30 Ind. 40 40 Com’l 100 100 Ind. 110 110 Com’l 15 15 Ind. 30 30 ISB2 Standby Current (One Port TTL Level) CEL and CER ≥ VIH, f = fMAX[3] Standby Current Both Ports CE and CER ≥ VCC – 0.2V, (Both Ports CMOS Levels) VIN ≥ VCC – 0.2V or VIN ≤ 0.2V, f = 0[3] Standby Current (One Port CMOS Level) V 180 CEL and CER ≥ VIH, f = ISB4 0.8 Ind. Standby Current (Both Ports TTL Levels) One Port CEL or CER ≥ VCC – 0.2V, VIN ≥ VCC – 0.2V or VIN ≤ 0.2V, Active Port Outputs, f = fMAX[3] V V fMAX[3] ISB1 ISB3 0.4 0.8 Unit V 2.2 VIL GND ≤ VI ≤ VCC Max. Com’l 90 90 Ind. 100 100 mA mA mA mA Capacitance[4] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max. Unit 10 pF 10 pF AC Test Loads and Waveforms 5V R1 = 893Ω C = 30 pF RTH = 250Ω OUTPUT OUTPUT OUTPUT C = 5 pF C = 30 pF R1 = 347Ω VTH = 1.4V (a) Normal Load (Load 1) RTH = 250Ω (b) Thévenin Equivalent (Load 1) VX (c) Three-State Delay (Load 3) ALL INPUT PULSES 3.0V GND 10% 90% ≤ 3 ns 90% 10% ≤ 3 ns Note: 4. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-06038 Rev. *C Page 4 of 12 CY7C135 CY7C1342 Switching Characteristics Over the Operating Range[5] Parameter Description 7C135-15 7C1342-15 7C135-20 7C1342-20 7C135-25 7C1342-25 7C135-35 7C1342-35 7C135-55 7C1342-55 Min. Min. Min. Min. Min. Max. Max. Max. Max. Max. Unit READ CYCLE tRC Read Cycle Time tAA Address to Data Valid tOHA Output Hold From Address Change tACE CE LOW to Data Valid tDOE OE LOW to Data Valid tLZOE[6,7,8] OE Low to Low Z tHZOE[6,7,8] tLZCE[6,7,8] tHZCE[6,7,8] tPU[8] tPD[8] OE HIGH to High Z CE LOW to Low Z 15 15 3 3 3 3 3 10 0 13 20 20 15 ns 25 ns ns 25 20 25 55 3 0 ns ns 25 0 35 ns ns 3 3 0 20 3 3 15 ns 55 35 15 3 0 15 3 3 13 55 35 25 13 3 10 35 25 20 10 3 CE HIGH to Power Down 25 20 15 CE HIGH to High Z CE LOW to Power Up 20 ns ns 55 ns WRITE CYCLE tWC Write Cycle Time 15 20 25 35 55 ns tSCE CE LOW to Write End 12 15 20 30 50 ns tAW Address Set-Up to Write End 12 15 20 30 50 ns tHA Address Hold from Write End 2 2 2 2 2 ns tSA Address Set-Up to Write Start 0 0 0 0 0 ns tPWE Write Pulse Width 12 15 20 25 50 ns tSD Data Set-Up to Write End 10 13 15 15 25 ns tHD Data Hold from Write End 0 0 0 0 0 ns tHZWE[7,8] tLZWE[7,8] tWDD[9] tDDD[9] R/W LOW to High Z R/W HIGH to Low Z 10 3 13 3 15 3 20 3 25 3 ns ns Write Pulse to Data Delay 30 40 50 60 70 ns Write Data Valid to Read Data Valid 25 30 30 35 40 ns SEMAPHORE TIMING[10] tSOP SEM Flag Update Pulse (OE or SEM) 10 10 10 15 15 ns tSWRD SEM Flag Write to Read Time 5 5 5 5 5 ns tSPS SEM Flag Contention Window 5 5 5 5 5 ns Notes: 5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 6. At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE. 7. Test conditions used are Load 3. 8. This parameter is guaranteed but not tested. 9. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Port-to-Port Delay waveform. 10. Semaphore timing applies only to CY7C1342. Document #: 38-06038 Rev. *C Page 5 of 12 CY7C135 CY7C1342 Switching Waveforms Read Cycle No. 1[11,12] Either Port Address Access tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2[11,13] Either Port CE/OE Access SEM [10] or CE tHZCE tACE OE tLZOE tHZOE tDOE tLZCE DATA VALID DATA OUT tPU tPD ICC ISB Read Timing with Port-to-Port[14] twc ADDRESSR MATCH t R/WR PWE t DATAINR ADDRESSL t SD HD VALID MATCH tDDD DATAOUTL VALID tWDD Notes: 11. R/W is HIGH for read cycle. 12. Device is continuously selected, CE = VIL and OE = VIL. 13. Address valid prior to or coincident with CE transition LOW. 14. CEL = CER =LOW; R/WL = HIGH Document #: 38-06038 Rev. *C Page 6 of 12 CY7C135 CY7C1342 Switching Waveforms (continued) Write Cycle No. 1: OE Three-States Data I/Os (Either Port)[15, 16, 17] tWC ADDRESS tSCE [10] SEM OR CE tAW tHA tPWE R/W tSA tSD DATAIN tHD DATA VALID OE t tHZOE LZOE HIGH IMPEDANCE DATAOUT Write Cycle No. 2:R/W Three-States Data I/Os (Either Port)[16, 18] tWC ADDRESS tSCE tHA [10] SEM OR CE R/W tSA tAW tPWE tSD DATA VALID DATAIN tHZWE DATAOUT tHD tLZWE HIGH IMPEDANCE Notes: 15. The internal write time of the memory is defined by the overlap of CE or SEM LOW and R/W LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 16. R/W must be HIGH during all address transactions. 17. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and data to be placed on the bus for the required tSD. If OE is HIGH during a R/W controlled write cycle (as in this example), this requirement does not apply and the write pulse can be as short as the specified tPWE. 18. Data I/O pins enter high-impedance when OE is held LOW during write. Document #: 38-06038 Rev. *C Page 7 of 12 CY7C135 CY7C1342 Switching Waveforms (continued) Semaphore Read After Write Timing, Either Side (CY7C1342 only)[19] tOHA tAA A0–A2 VALID ADDRESS VALID ADDRESS tAW SEM tACE tHA tSCE tSOP tSD I/O0 DATAINVALID tSA DATAOUT VALID tHD tPWE R/W tSWRD tDOE tSOP OE WRITE CYCLE READ CYCLE Timing Diagram of Semaphore Contention (CY7C1342 only)[20, 21, 22] A0L–A2L MATCH R/WL SEML tSPS A0R–A2R MATCH R/WR SEMR Notes: 19. CE = HIGH for the duration of the above timing (both write and read cycle). 20. I/O0R = I/O0L = LOW (request semaphore); CER = CEL = HIGH. 21. Semaphores are reset (available to both ports) at cycle start. 22. If tSPS is violated, it is guaranteed that only one side will gain access to the semaphore. Document #: 38-06038 Rev. *C Page 8 of 12 CY7C135 CY7C1342 Architecture The CY7C135 consists of an array of 4K words of 8 bits each of dual-port RAM cells, I/O and address lines, and control signals (CE, OE, R/W). Two semaphore control pins exist for the CY7C1342 (SEML/R). Functional Description Write Operation Data must be set up for a duration of tSD before the rising edge of R/W in order to guarantee a valid write. Since there is no on-chip arbitration, the user must be sure that a specific location will not be accessed simultaneously by both ports or erroneous data could result. A write operation is controlled by either the OE pin (see Write Cycle No. 1 timing diagram) or the R/W pin (see Write Cycle No. 2 timing diagram). Data can be written tHZOE after the OE is deasserted or tHZWE after the falling edge of R/W. Required inputs for write operations are summarized in Table 1. If a location is being written to by one port and the opposite port attempts to read the same location, a port-to-port flowthrough delay is met before the data is valid on the output. Data will be valid on the port wishing to read the location tDDD after the data is presented on the writing port. zero (the left port in this case). If the left port now relinquishes control by writing a one to the semaphore, the semaphore will be set to one for both sides. However, if the right port had requested the semaphore (written a zero) while the left port had control, the right port would immediately own the semaphore. Table 2 shows sample semaphore operations. When reading a semaphore, all eight data lines output the semaphore value. The read value is latched in an output register to prevent the semaphore from changing state during a write from the other port. If both ports request a semaphore control by writing a 0 to a semaphore within tSPS of each other, it is guaranteed that only one side will gain access to the semaphore. Initialization of the semaphore is not automatic and must be reset during initialization program at power-up. All semaphores on both sides should have a one written into them at initialization from both sides to assure that they will be free when needed. Table 1. Non-Contending Read/Write Inputs CE Outputs OE SEM I/O0 – I/O7 H X X H High Z Power-Down H H L L Data Out Read Semaphore X X H X High Z I/O Lines Disabled H L X L Data In Write to Semaphore L H L H Data Out Read L L X H Data In Write L X X L Read Operation When reading the device, the user must assert both the OE and CE pins. Data will be available tACE after CE or tDOE after OE are asserted. If the user of the CY7C1342 wishes to access a semaphore, the SEM pin must be asserted instead of the CE pin. Required inputs for read operations are summarized in Table 1. Semaphore Operation The CY7C1342 provides eight semaphore latches which are separate from the dual port memory locations. Semaphores are used to reserve resources which are shared between the two ports. The state of the semaphore indicates that a resource is in use. For example, if the left port wants to request a given resource, it sets a latch by writing a zero to a semaphore location. The left port then verifies its success in setting the latch by reading it. After writing to the semaphore, SEM or OE must be deasserted for tSOP before attempting to read the semaphore. The semaphore value will be available tSWRD + tDOE after the rising edge of the semaphore write. If the left port was successful (reads a zero), it assumes control over the shared resource, otherwise (reads a one) it assumes the right port has control and continues to poll the semaphore. When the right side has relinquished control of the semaphore (by writing a one), the left side will succeed in gaining control of the semaphore. If the left side no longer requires the semaphore, a one is written to cancel its request. Semaphores are accessed by asserting SEM LOW. The SEM pin functions as a chip enable for the semaphore latches. CE must remain HIGH during SEM LOW. A0–2 represents the semaphore address. OE and R/W are used in the same manner as a normal memory access. When writing or reading a semaphore, the other address pins have no effect. When writing to the semaphore, only I/O0 is used. If a 0 is written to the left port of an unused semaphore, a one will appear at the same semaphore address on the right port. That semaphore can now only be modified by the side showing a Document #: 38-06038 Rev. *C Operation R/W Illegal Condition Table 2. Semaphore Operation Example Function I/O0-7 I/O0-7 Left Right Status No Action 1 1 Semaphore free Left port writes semaphore 0 1 Left port obtains semaphore Right port writes 0 to semaphore 0 1 Right side is denied access Left port writes 1 to semaphore 1 0 Right port is granted access to Semaphore Left port writes 0 to semaphore 1 0 No change. Left port is denied access Right port writes 1 to semaphore 0 1 Left port obtains semaphore Left port writes 1 to semaphore 1 1 No port accessing semaphore address Right port writes 0 to semaphore 1 0 Right port obtains semaphore Right port writes 1 to semaphore 1 1 No port accessing semaphore Left port writes 0 to semaphore 0 1 Left port obtains semaphore Left port writes 1 to semaphore 1 1 No port accessing semaphore Page 9 of 12 CY7C135 CY7C1342 NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE 1.2 ISB NORMALIZED ICC, ISB 1.2 1.0 0.8 0.6 0.4 0.2 0.0 4.0 ICC 4.5 5.0 5.5 ICC 1.0 ISB3 0.8 0.6 VCC = 5.0V VIN = 5.0V 0.4 0.2 0.6 –55 6.0 SUPPLY VOLTAGE (V) NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE 1.2 1.10 NORMALIZED tAA NORMALIZED tAA TA = 25°C 1.05 1.00 1.1 1.0 VCC = 5.0V 0.9 0.95 4.0 4.5 5.0 5.5 0.8 –55 6.0 25 AMBIENT TEMPERATURE (°C) TYPICAL POWER-ON CURRENT vs. SUPPLY VOLTAGE TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 0.75 15.0 DELTA tAA (ns) NORMALIZED tPC 20.0 10.0 0.50 VCC = 4.5V TA = 25°C 5.0 0.25 0 0 1.0 2.0 3.0 4.0 SUPPLY VOLTAGE (V) Document #: 38-06038 Rev. *C 5.0 0 200 400 140 120 100 80 600 800 1000 CAPACITANCE (pF) VCC = 5.0V TA = 25°C 60 40 20 0 0 1.0 2.0 3.0 4.0 5.0 OUTPUT VOLTAGE (V) OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE 100 90 80 70 VCC = 5.0V TA = 25°C 60 50 0.0 125 SUPPLY VOLTAGE (V) 1.0 0.0 25 125 AMBIENT TEMPERATURE (°C) OUTPUT SINK CURRENT (mA) NORMALIZED ICC, ISB 1.4 OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE 1.0 2.0 3.0 4.0 5.0 OUTPUT VOLTAGE (V) 1.25 NORMALIZED ICC NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE OUTPUT SOURCE CURRENT (mA) Typical DC and AC Characteristics NORMALIZED ICC vs. CYCLE TIME 1.0 VCC = 5.0V TA = 25°C VIN = 5.0V 0.75 0.50 10 20 30 40 50 CYCLE FREQUENCY (MHz) Page 10 of 12 CY7C135 CY7C1342 Ordering Information 4K x8 Dual-Port SRAM Speed (ns) 15 Ordering Code Package Name Operating Range Package Type CY7C135–15JC J69 52-Lead Plastic Leaded Chip Carrier CY7C135-15JXC J69 52-Lead Pb-Free Plastic Leaded Chip Carrier 20 CY7C135–20JC J69 52-Lead Plastic Leaded Chip Carrier Commercial 25 CY7C135–25JC J69 52-Lead Plastic Leaded Chip Carrier Commercial CY7C135-25JXC J69 52-Lead Pb-Free Plastic Leaded Chip Carrier CY7C135–25JI J69 52-Lead Plastic Leaded Chip Carrier Industrial 35 55 Commercial CY7C135–35JC J69 52-Lead Plastic Leaded Chip Carrier Commercial CY7C135–35JI J69 52-Lead Plastic Leaded Chip Carrier Industrial CY7C135–55JC J69 52-Lead Plastic Leaded Chip Carrier Commercial CY7C135–55JI J69 52-Lead Plastic Leaded Chip Carrier Industrial 4K x8 Dual-Port SRAM with Semaphores Speed (ns) Ordering Code Package Type Operating Range Package Type 15 CY7C1342–15JC J69 52-Lead Plastic Leaded Chip Carrier Commercial 20 CY7C1342–20JC J69 52-Lead Plastic Leaded Chip Carrier Commercial 25 CY7C1342–25JC J69 52-Lead Plastic Leaded Chip Carrier Commercial CY7C1342–25JI J69 52-Lead Plastic Leaded Chip Carrier Industrial 35 CY7C1342–35JC J69 52-Lead Plastic Leaded Chip Carrier Commercial CY7C1342–35JI J69 52-Lead Plastic Leaded Chip Carrier Industrial 55 CY7C1342–55JC J69 52-Lead Plastic Leaded Chip Carrier Commercial CY7C1342–55JI J69 52-Lead Plastic Leaded Chip Carrier Industrial Package Diagrams 52-Lead Plastic Leaded Chip Carrier J69 52-Lead Pb-Free Plastic Leaded Chip Carrier J69 51-85004-*A All products and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-06038 Rev. *C Page 11 of 12 © Cypress Semiconductor Corporation, 2005. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C135 CY7C1342 Document History Page Document Title: CY7C135/CY7C1342 4K x 8 Dual Port Static RAM and 4K x 8 Dual Port Static RAM w/Semaphores Document Number: 38-06038 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 110181 10/21/01 SZV Change from Spec number: 38-00541 to 38-06038 *A 122288 12/27/02 RBI Power up requirements added to Maximum Ratings Information *B 236763 SEE ECN YDT Removed cross information from features section *C 393413 See ECN YIM Added Pb-Free Logo Added Pb-Free parts to ordering information: CY7C135-15JXC, CY7C135-25JXC Document #: 38-06038 Rev. *C Page 12 of 12