PD - 93776 IRFC1404 HEXFET® Power MOSFET Die in Wafer Form D 40V Size 4.0 RDS(on)=0.0029Ω 6" Wafer G S Electrical Characteristics (Wafer Form) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Operating Junction and Storage Temperature Range Guaranteed (Min/Max) 40V Min. 2.9mΩ Max. 2.0V Min., 4.0V Max. 25µA Max. ± 200nA Max. -55°C to 175°C Max. Test Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 45A VDS = VGS , ID = 250µA VDS = 40V, VGS = 0V, TJ = 25°C VGS = ±20V Mechanical Data Nominal Back Metal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer Thickness: Relevant Die Mechanical Drawing Number Minimum Street Width Reject Ink Dot Size Recommended Storage Environment: Recommended Die Attach Conditions: Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° ) 100% Al (0.008 mm) .170" x .230" [ 4.32 mm x 5.84 mm ] 150 mm, with 100 flat 0.356 mm ± 0.025 mm 01-5384 0.109 mm 0.51 mm Diameter Minimum Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300 °C Die Outline www.irf.com 1 10/12/99