PD - 93777 IRFC2907B HEXFET® Power MOSFET Die in Wafer Form 100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack** l Ultra Low On-Resistance Electrical Characteristics * D l Parameter V(BR)DSS RDS(on)*** VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Operating Junction and Storage Temperature Range 75V RDS(on) = 2.5mΩ (typ.)∗∗∗ 6" Wafer G S Min Typ. Max 75V ––– ––– ––– 2.5mΩ 4.5mΩ 2.0 ––– 4.0V ––– ––– 20µA ––– ––– ± 200nA -55°C to 175°C Max. Test Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 110A V DS = VGS, ID = 250µA VDS = 75V, VGS = 0V, TJ = 25°C V GS = ±20V Mechanical Data Nominal Back Metal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer Thickness: Relevant Die Mechanical Drawing Number Minimum Street Width Reject Ink Dot Size Recommended Storage Environment: Recommended Die Attach Conditions: Reference Packaged Part Cr-NiV-Ag ( 1kA°-2kA°-5kA° ) 100% Al (0.008 mm) .257" x .360" [ 6.53 mm x 9.14 mm ] 150 mm, with 100 flat 0.254 mm ± 0.025 mm 01-5403 0.107 mm 0.51 mm Diameter Minimum Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300 °C IRFP2907 Die Outline NOT ES : 6.53 [.257] 1. AL L DIMENS IONS ARE S HOWN IN MILL IMET ERS [INCHES ]. 2. CONT ROL L ING DIMENS ION: [INCH]. 3. LET T ER DES IGNAT ION: S = S OURCE S K = S OURCE KELVIN G = GAT E IS = CURRENT S ENS E E = EMITT ER 4. DIMENS IONAL T OL ERANCES: B ONDING PADS : SOURCE SOURCE 9.14 [.360] WIDTH & L ENGT H GAT E 0.508 [.020] < [.0250] T OLERANCE = + /- [.0005] > 0.635 T OLERANCE = + /- 0.025 > [.0250] T OLERANCE = + /- [.0010] OVERALL DIE: < 1.270 T OLERANCE = + /- 0.102 WIDTH < [.050] T OL ERANCE = + /- [.004] & > 1.270 T OLERANCE = + /- 0.203 L ENGT H 0.508 [.020] < 0.635 T OLERANCE = + /- 0.013 > [.050] T OL ERANCE = + /- [.008] 5. UNL ES S OT HERWIS E NOT ED AL L DIE ARE GEN III * Electrical characteristics are reported for the reference packaged part (see above) and can not be guaranteed in die sales form. Variations in customer packaging materials, dimensions and processes may affect parametric performance. ** Contact factory for these product forms. ***The typical RDS(on) is an estimated value for the bare die, actual results will depend on customer packaging materials and dimensions. www.irf.com 1 10/4/00