IRF IRFC240

PD- 91873
IRFC240
HEXFET® Power MOSFET Die in Wafer Form
D
200 V
Size 4.0
Rds(on)=0.18Ω
5" Wafer
G
S
Electrical Characteristics ( Wafer Form )
Parameter
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
TJ
TSTG
Description
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage
Operating Junction and
Storage Temperature Range
Guaranteed (Min/Max)
200V Min.
0.180Ω Max.
2.3V Min., 4.0V Max.
25µA Max.
± 10µA Max.
125°C Max.
Test Conditions
VGS = 0V, ID = 100µA
VGS = 10V, ID = 10A
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V, TJ = 25°C
VGS = ±20V
Mechanical Data
Nominal Backmetal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions
Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )
99% Al, 1% Si (0.004 mm)
0.147" x 0.201" ( 3.73mm x 5.11 mm)
125mm with 100 flat
0.375mm + / -0.020mm
01-5331
0.084 mm
0.51mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Reference Standard IR packaged part ( for design ) : IRF640
Die Outline
3/23/99