White Electronic Designs WED3DG644V-D1 32MB – 4Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible Burst Mode Operation Auto and Self Refresh capability LVTTL compatible inputs and outputs Serial Presence Detect with EEPROM The WED3DG644V is a 4Mx64 synchronous DRAM module which consists of four 4Mx16 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSOP package for Serial Presence Detect which are mounted on a 144 pin SO-DIMM multilayer FR4 Substrate. Fully synchronous: All signals are registered on the positive edge of the system clock * This product is subject to change without notice. Programmable Burst Lengths: 1, 2, 4, 8 or Full Page 3.3V ± 0.3V Power Supply NOTE: Consult factory for availability of: • RoHS compliant products • Vendor source control options • Industrial temperature option 144 Pin SO-DIMM JEDEC • D1: 27.94 (1.10”) PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE) Pin Front Pin Back Pin Front Pin Back 1 VSS 2 VSS 51 DQ14 52 DQ46 3 DQ0 4 DQ32 53 DQ15 54 DQ47 56 VSSv 5 DQ1 6 DQ33 55 VSS 7 DQ2 8 DQ34 57 NC 58 NC 9 DQ3 10 DQ35 59 NC 60 NC 12 VCC 11 VCC 13 DQ4 14 DQ36 VOLTAGE KEY 15 DQ5 16 DQ37 17 DQ6 18 DQ38 61 CLK0 62 CKE0 19 DQ7 20 DQ39 63 VCC 64 VCC 21 VSS 22 VSS 65 RAS# 66 CAS# 23 DQM0 24 DQM4 67 WE# 68 *CKE1 25 DQM1 26 DQM5 69 CS0# 70 *A12 27 VCC 28 VCC 71 *CS1# 72 *A13 29 A0 30 A3 73 DNU 74 *CK1 31 A1 32 A4 75 VSS 76 VSS 33 A2 34 A5 77 NC 78 NC 36 VSS 79 NC 80 NC 35 VSS 37 DQ8 38 DQ40 81 VCC 82 VCC 39 DQ9 40 DQ41 83 DQ16 84 DQ48 41 DQ10 42 DQ42 85 DQ17 86 DQ49 43 DQ11 44 DQ43 87 DQ18 88 DQ50 46 VCC 89 DQ19 90 DQ51 45 VCC 47 DQ12 48 DQ44 91 VSS 92 VSS 49 DQ13 50 DQ45 93 DQ20 94 DQ52 June 2006 Rev. 3 Pin 95 97 99 101 103 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 135 137 139 141 143 Back DQ21 DQ22 DQ23 VCC A6 A8 VSS A9 A10/AP VCC DQM2 DQM3 VSS DQ24 DQ25 DQ26 DQ27 VCC DQ28 DQ29 DQ30 DQ31 VSS **SDA VCC 1 Pin Back 96 DQ53 98 DQ54 100 DQ55 102 VCC 104 A7 106 BA0 108 VSS 110 BA1 112 A11 114 VCC 116 DQM6 118 DQM7 120 VSS 122 DQ56 124 DQ57 126 DQ58 128 DQ59 130 VCC 132 DQ60 134 DQ61 136 DQ62 138 DQ63 140 VSS 142 **SCL 144 VCC PIN NAMES A0 – A11 BA0-1 DQ0-63 CLK0 CKE0 CS0# RAS# CAS# WE# DQM0-7 VCC VSS *VREF SDA SCL DNU NC Address input (Multiplexed) Select Bank Data Input/Output Clock input Clock Enable input Chip select Input Row Address Strobe Column Address Strobe Write Enable DQM Power Supply (3.3V) Ground Power supply for reference Serial data I/O Serial clock Do not use No Connect * These pins are not used in this module. ** These pins should be NC in the system which does not support SPD. White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED3DG644V-D1 FUNCTIONAL BLOCK DIAGRAM CS0# DQM0 DQM4 LDQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQM1 CS# LDQM DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 UDQM DQM5 UDQM DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQM2 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQM6 LDQM DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQM3 CS# LDQM DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQn 10 Ω UDQM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 A0-A11 BA0 RAS# CAS# WE# CKE0 SDRAM SDRAM SDRAM SDRAM SDRAM SDRAM SERIAL PD SCL 47Ω WP SA0 SDA SA1 10Ω Every DQpin of SDRAM SDRAM SDRAM 10Ω TWO 0.1 uF CAPACITORS To all SDRAMS PER EACH SDRAM SA2 SDRAM CLK0 VCC CS# DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQM7 UDQM DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 VCC CS# DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CLK1 SDRAM 10 Ω 10pF Notes: 1. All resistor values are 10 ohms unless otherwise specified. 2. D1 option does not have series resistors. June 2006 Rev. 3 2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED3DG644V-D1 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units Voltage on any pin relative to VSS VIN, VOUT -1.0 ~ 4.6 V Voltage on VCC supply relative to VSS VCC, VCCQ -1.0 ~ 4.6 V TSTG -55 ~ +150 °C Power Dissipation PD 4 W Short Circuit Current IOS 50 mA Storage Temperature Note: Permanent device damage may occur if “ABSOLUTE MAXIMUM RATINGS” are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. RECOMMENDED DC OPERATING CONDITIONS Voltage Referenced to: VSS = 0V, TA = 0°C to +70°C Parameter Symbol Min Typ Max Unit Supply Voltage VCC 3.0 3.3 3.6 V Input High Voltage VIH 2.0 3.0 VCCQ+0.3 V Note 1 Input Low Voltage VIL -0.3 — 0.8 V 2 Output High Voltage VOH 2.4 — — V IOH= -2mA Output Low Voltage VOL — — 0.4 V IOL= -2mA Input Leakage Current ILI -10 — 10 µA 3 Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns. 2. VIL (min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns. 3. Any input 0V ≤ VIN ≤ VCCQ Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. CAPACITANCE TA = 25°C, f = 1MHz, VCC = 3.3V, VREF = 1.4V ± 200mV Parameter Symbol Max Unit CIN1 25 pF Input Capacitance (RAS#,CAS#,WE#) CIN2 25 pF Input Capacitance (CKE0) CIN3 25 pF Input Capacitance (CLK0) CIN4 19 pF Input Capacitance (CS0#) CIN5 25 pF Input Capacitance (DQM0-DQM7) CIN6 8 pF Input Capacitance (BA0-BA1) CIN7 25 pF Data Input/Output Capacitance (DQ0-DQ63) COUT 10 pF Input Capacitance (A0-A12) June 2006 Rev. 3 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED3DG644V-D1 OPERATING CURRENT CHARACTERISTICS (VCC = 3.3V, TA = 0°C to +70°C) Version Parameter Symbol Conditions 133/100 Units Note 300 mA 1 CKE ≤ VIL(max), tCC = 10ns 4 mA CKE & CLK ≤ VIL(max), tCC = ∞ 4 ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tcc =10ns Input signals are charged one time during 20 48 ICC2NS CKE ≥ VIH(min), CLK ≥VIL(max), tCC = ∞ Input signals are stable 24 ICC3P CKE ≥ VIL(max), tCC = 10ns 8 ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞ 8 ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns Input signals are changed one time during 20ns 80 ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞ Input signals are stable ICC4 Operating Current (One bank active) ICC1 Burst Length = 1 tRC ≤ tRC(min) IOL = 0mA Precharge Standby Current in Power Down Mode ICC2P ICC2PS Precharge Standby Current in Non-Power Down Mode Active Standby Current in Power-Down Mode Active Standby Current in Non-Power Down Mode Operating Current (Burst mode) Refresh Current ICC5 Self Refresh Current ICC6 mA mA mA 40 mA Io = mA Page burst 4 Banks activated tCCD = 2CLK 460 mA 1 tRC ≥ tRC(min) 360 mA 2 4 mA CKE ≤ 0.2V Notes: 1. Measured with outputs open. 2. Refresh period is 64ms. June 2006 Rev. 3 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED3DG644V-D1 AC OPERATING TEST CONDITIONS VCC = 3.3V ± 0.3V, 0 ≤ TA ≤ 70°C Parameter Value Unit AC input levels (VIH/VIL) 2.4/0.4 V Input timing measurement reference level Input rise and fall time Output timing measurement reference level 1.4 V tR/tF = 1/1 ns 1.4 V OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter Symbol Version 7.5, 10 Unit Note Row active to row active delay tRRD (min) 15 ns 1 RAS# to CAS# delay tRCD (min) 20 ns 1 Row precharge time Row active time tRP (min) 20 ns 1 tRAS (min) 45 ns 1 tRAS (max) 100 us Row cycle time tRC (min) 65 ns 1 2 Last data in to row precharge tRDL (min) 2 CLK Last data in to Active delay tDAL (min) 2 CLK + tRP — Last data in to new col. address delay tCDL (min) 1 CLK 2 Last data in to burst stop tBDL (min) 1 CLK 2 1 CLK 3 ea 4 Col. address to col. address delay Number of valid output data tCCD (min) CAS latency=3 2 CAS latency=2 1 Notes : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. June 2006 Rev. 3 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED3DG644V-D1 ORDERING INFORMATION FOR D1 Part Number Clock Speed CAS Latency Height* WED3DG644V10D1x-xx 100MHz CL=2 27.94 (1.100”) WED3DG644V7D1x-xx 133MHz CL=2 27.94 (1.100”) WED3DG644V75D1x-xx 133MHz CL=3 27.94 (1.100”) NOTES: • Consult Factory for availability of RoHS products. (G = RoHS Compliant) • Vendor specific part numbers are used to provide memory components source control. The place holder for this is shown as lower case “-x” in the part numbers above and is to be replaced with the respective vendors code. Consult factory for qualified sourcing options. (M = Micron, S = Samsung & consult factory for others) • Consult factory for availability of industrial temperature (-40°C to 85°C) option PACKAGE DIMENSIONS FOR D1 67.74 (2.667) MAX 3.81 (0.150) TYP 2.01 (0.079) MIN 19.99 (0.787) WEDC 3.99 (0.157) 23.19 (0.913) 28.24 (1.112) 27.94 (1.100) MAX 3.99 (0.157) MIN 3.20 (0.126) MIN 32.79 (1.291) 4.60 (0.181) 0.99 ± 0.10 (0.039 ± 0.004) 1.50 (0.059) * ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES). June 2006 Rev. 3 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED3DG644V-D1 PART NUMBERING GUIDE WED 3 D G 64 4 V xxx D1 x -x G WEDC MEMORY (SDRAM) SDRAM GOLD DEPTH x64 DENSITY 3.3 Volts CLOCK SPEED (MHz) PACKAGE D1 = 144 PIN SO-DIMM INDUSTRIAL TEMP OPTION (For commercial leave "blank" for industrial add "I") COMPONENT VENDOR NAME (M = Micron) (S = Samsung) G = RoHS COMPLIANT (For non-compliant "blank" for RoHS add “G”) June 2006 Rev. 3 7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED3DG644V-D1 Document Title 32MB – 4Mx64 SDRAM, UNBUFFERED DRAM DIE OPTIONS: • SAMSUNG: K-Die • MICRON: Y14W:G Revision History Rev # History Release Date Status Rev A Created 11-15-01 Advanced Rev 0 Changed from Advanced to Final 9-6-02 Final Rev 1 Updated CAP and IDD specs 6-04 Final Rev 2 2.1 Added RoHS and lead-free notes 1-06 Final 6-06 Final 2.2 Added vendor source and industrial tem notes 2.3 Added part number matrix Rev 3 3.1 Updated part number guide 3.2 Updated “ordering information” part number 3.3 Added DRAM die options June 2006 Rev. 3 8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com