Silizium-Pin-Fotodiode mit Tageslichtsperrfilter; in SMT Silicon Pin Photodiode with Daylight Filter; in SMT BP 104 F BP 104 FS BP 104 F BP 104 FS Wesentliche Merkmale Features • • • • • • • • Speziell geeignet für Anwendungen bei 950 nm Kurze Schaltzeit (typ. 20 ns) DIL-Plastikbauform mit hoher Packungsdichte BP 104 FS: geeignet für Vapor-Phase Löten und IR-Reflow Löten Especially suitable for applications of 950 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density BP 104 FS: suitable for vapor-phase and IR-reflow soldering Anwendungen Applications • IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern, Gerätefernsteuerungen • Lichtschranken für Gleich- und Wechsellichtbetrieb • IR remote control of hi-fi and TV sets, video tape recorders, dimmers, remote controls of various equipment • Photointerrupters Typ Type Bestellnummer Ordering Code Gehäuse Package BP 104 F Q62702-P84 DIL-Gehäuse, schwarzes Epoxy-Gießharz, Kathodenkennzeichnung: Fähnchen am Anschluß DIL package, black epoxy resin Cathode marking: flag on lead BP 104 FS Q62702-P1646 DIL/SMT-Gehäuse, schwarzes Epoxy-Gießharz, Kathodenkennzeichnung: Langer, breiter Anschluß DIL/SMT package, black epoxy resin Cathode marking: long broad lead 2001-02-21 1 BP 104 F, BP 104 FS Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 100 °C Sperrspannung Reverse voltage VR 20 V Verlustleistung, TA = 25 °C Ptot 150 mW Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotostrom Photocurrent VR = 5 V, Ee = 1 mW/cm2 IP 34 (≥ 25) µA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 950 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 800 … 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 4.84 mm2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×B 2.20 × 2.20 mm × mm Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics L×W Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface H 0.5 0.3 (BP 104 FS) mm Halbwinkel Half angle ϕ ± 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 (≤ 30) nA Spektrale Fotoempfindlichkeit Spectral sensitivity Sλ 0.70 A/W Quantenausbeute Quantum yield η 0.90 Electrons Photon 2001-02-21 2 BP 104 F, BP 104 FS Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage VO 330 (≥ 250) mV Kurzschlußstrom, Ee = 0.5 mW/cm2 Short-circuit current ISC 17 µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA tr, tf 20 ns Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 48 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV – 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 3.6 × 10–14 Nachweisgrenze, VR = 10 V Detection limit D* 6.1 × 1012 2001-02-21 3 W -----------Hz cm × Hz -------------------------W BP 104 F, BP 104 FS Photocurrent IP = f (Ee), VR = 5 V Open-Circuit Voltage VO = f (Ee) Relative Spectral Sensitivity Srel = f (λ) OHF00368 100 ΙP S rel % 80 OHF01056 10 3 µA 10 4 mV VO 10 2 10 3 VO OHF00958 160 mW Ptot 140 120 100 60 10 1 10 2 40 Total Power Dissipation Ptot = f (TA) ΙP 80 60 10 0 10 1 40 20 20 0 700 10 800 900 1000 nm λ -1 10 0 1200 10 1 10 10 4 µW/cm2 10 2 0 0 0 20 40 60 Ee 80 ˚C 100 TA Dark Current Capacitance Dark Current IR = f (VR), E = 0 C = f (VR), f = 1 MHz, E = 0 IR = f (TA), VR = 10 V, E = 0 OHFD1781 4000 OHF01778 60 pA C ΙR OHF00082 10 3 Ι R nA pF 50 10 2 3000 40 10 1 30 2000 20 10 0 1000 10 0 5 0 10 15 0 -2 10 V 20 10 -1 10 0 10 1 V 10 2 VR VR Directional Characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2001-02-21 0.8 0.6 0.4 0 20 40 60 80 4 100 120 10 -1 0 20 40 60 80 ˚C 100 TA BP 104 F, BP 104 FS Maßzeichnung Package Outlines BP 104 F 5.4 (0.213) 4.9 (0.193) 0.6 (0.024) 0.4 (0.016) 0.35 (0.014) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0 ... 5˚ 0.6 (0.024) 5.08 (0.200) spacing Photosensitive area 2.20 (0.087) x 2.20 (0.087) 0.3 (0.012) 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) BP 104 FS GEOY6075 Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0...5 ˚ 0.2 (0.008) 0.1 (0.004) 1.8 (0.071) 1.4 (0.055) 3.5 (0.138) 3.0 (0.118) 4.5 (0.177) 4.3 (0.169) 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) Chip position 0.8 (0.031) 0.6 (0.024) 0.7 (0.028) 0.6 (0.024) 0.4 (0.016) 0.5 (0.020) 4.0 (0.157) 3.7 (0.146) 1.2 (0.047) 0.6 (0.024) 0.4 (0.016) Cathode marking 0.9 (0.035) 0.7 (0.028) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.6 (0.063) ±0.2 (0.008) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GEOY6861 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-02-21 5 BP 104 F, BP 104 FS Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-21 6